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Title: Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS 2

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1546409
Grant/Contract Number:  
SC00014664
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 122 Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Fang, Ziffer, Mark E., Hansen, Kameron R., Wang, Jue, and Zhu, Xiaoyang. Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS 2. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.122.246803.
Liu, Fang, Ziffer, Mark E., Hansen, Kameron R., Wang, Jue, & Zhu, Xiaoyang. Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS 2. United States. doi:10.1103/PhysRevLett.122.246803.
Liu, Fang, Ziffer, Mark E., Hansen, Kameron R., Wang, Jue, and Zhu, Xiaoyang. Fri . "Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS 2". United States. doi:10.1103/PhysRevLett.122.246803.
@article{osti_1546409,
title = {Direct Determination of Band-Gap Renormalization in the Photoexcited Monolayer MoS 2},
author = {Liu, Fang and Ziffer, Mark E. and Hansen, Kameron R. and Wang, Jue and Zhu, Xiaoyang},
abstractNote = {},
doi = {10.1103/PhysRevLett.122.246803},
journal = {Physical Review Letters},
number = 24,
volume = 122,
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
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This content will become publicly available on June 20, 2020
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Works referenced in this record:

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  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
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Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
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  • Fang, Hui; Tosun, Mahmut; Seol, Gyungseon
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Single-layer MoS2 transistors
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  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
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