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Title: Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi 2.1 Sr 1.9 CaCu 2.0 O 8 + δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]

Abstract

We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy (T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [2];  [3];  [3];  [4];  [5];  [1]
  1. Harvard Univ., Cambridge, MA (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. National Institute for Materials Science, Ibaraki (Japan)
  4. Institute for Physics of Microstructures RAS, Nizhny Novgorod (Russia); Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk (Russia)
  5. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, Chicago, IL (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Gordon and Betty Moore Foundation; National Science Foundation (NSF); Natural Sciences and Engineering Research Council of Canada (NSERC); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1557711
Alternate Identifier(s):
OSTI ID: 1543282; OSTI ID: 1546407
Report Number(s):
BNL-211946-2019-JAAM
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:  
SC0012704; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 122; Journal Issue: 24; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.122.247001.
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., & Kim, Philip. Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]. United States. https://doi.org/10.1103/PhysRevLett.122.247001
Zhao, S. Y. Frank, Poccia, Nicola, Panetta, Margaret G., Yu, Cyndia, Johnson, Jedediah W., Yoo, Hyobin, Zhong, Ruidan, Gu, G. D., Watanabe, Kenji, Taniguchi, Takashi, Postolova, Svetlana V., Vinokur, Valerii M., and Kim, Philip. Thu . "Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]". United States. https://doi.org/10.1103/PhysRevLett.122.247001. https://www.osti.gov/servlets/purl/1557711.
@article{osti_1557711,
title = {Sign-Reversing Hall Effect in Atomically Thin High-Temperature Bi2.1Sr1.9CaCu2.0O8+δ Superconductors [Sign-Reversing Hall Effect in Atomically Thin High Temperature Superconductors]},
author = {Zhao, S. Y. Frank and Poccia, Nicola and Panetta, Margaret G. and Yu, Cyndia and Johnson, Jedediah W. and Yoo, Hyobin and Zhong, Ruidan and Gu, G. D. and Watanabe, Kenji and Taniguchi, Takashi and Postolova, Svetlana V. and Vinokur, Valerii M. and Kim, Philip},
abstractNote = {We developed novel techniques to fabricate atomically thin Bi2.1Sr1.9CaCu2.0O8+δ van der Waals heterostructures down to two unit cells while maintaining a transition temperature Tc close to the bulk, and carry out magnetotransport measurements on these van der Waals devices. We find a double sign change of the Hall resistance E-xy as in the bulk system, spanning both below and above Tc . Further, we observe a drastic enlargement of the region of sign reversal in the temperature-magnetic field phase diagram with decreasing thickness of the device. We obtain quantitative agreement between experimental Rxy (T, B) and the predictions of the vortex dynamics-based description of Hall effect in high-temperature superconductors both above and below Tc .},
doi = {10.1103/PhysRevLett.122.247001},
journal = {Physical Review Letters},
number = 24,
volume = 122,
place = {United States},
year = {Thu Jun 20 00:00:00 EDT 2019},
month = {Thu Jun 20 00:00:00 EDT 2019}
}

Journal Article:

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Cited by: 42 works
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Figures / Tables:

Figure 1 Figure 1: Van der Waals BSCCO device. a. Optical image of Hall bar device, showing BSCCO with contacts and hexagonal boron nitride (h-BN) cover, as drawn in the inset below. b. Cross-sectional view of a typical device in scanning TEM. Columns of atoms are visible as dark spots. Black arrowsmore » point to location of bismuth oxide layers (darkest spots), while gray arrows show their extrapolated positions. c. Resistivity as a function of temperature for vdW devices of different thickness.« less

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Works referencing / citing this record:

High-temperature superconductivity in monolayer Bi2Sr2CaCu2O8+δ
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