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Title: Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1546221
Grant/Contract Number:  
SC0014388
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.061602.
Sharan, Abhishek, Gui, Zhigang, & Janotti, Anderson. Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors. United States. doi:10.1103/PhysRevMaterials.3.061602.
Sharan, Abhishek, Gui, Zhigang, and Janotti, Anderson. Mon . "Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors". United States. doi:10.1103/PhysRevMaterials.3.061602.
@article{osti_1546221,
title = {Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors},
author = {Sharan, Abhishek and Gui, Zhigang and Janotti, Anderson},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.061602},
journal = {Physical Review Materials},
number = 6,
volume = 3,
place = {United States},
year = {2019},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevMaterials.3.061602

Citation Metrics:
Cited by: 2 works
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