Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Abstract
Observation of large nonsaturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemission spectroscopy, and hybrid density functional theory we have unveiled the band structure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.
- Authors:
-
- Univ. of California, Santa Barbara, CA (United States)
- Univ. of Delaware, Newark, DE (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Cardiff Univ., Cardiff (United Kingdom)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- OSTI Identifier:
- 1603510
- Alternate Identifier(s):
- OSTI ID: 1546197
- Grant/Contract Number:
- AC02-05CH11231; ACI-1053575; SC0014388
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 99; Journal Issue: 12; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, de Lima, Felipe Crasto, Sharan, Abhishek, Sabino, Fernando P., Brown-Heft, Tobias L., Chang, Yu-Hao, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, and Palmstrøm, Christopher J. Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films. United States: N. p., 2019.
Web. doi:10.1103/PhysRevB.99.125134.
Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, de Lima, Felipe Crasto, Sharan, Abhishek, Sabino, Fernando P., Brown-Heft, Tobias L., Chang, Yu-Hao, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, & Palmstrøm, Christopher J. Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films. United States. https://doi.org/10.1103/PhysRevB.99.125134
Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, de Lima, Felipe Crasto, Sharan, Abhishek, Sabino, Fernando P., Brown-Heft, Tobias L., Chang, Yu-Hao, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, and Palmstrøm, Christopher J. Wed .
"Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films". United States. https://doi.org/10.1103/PhysRevB.99.125134. https://www.osti.gov/servlets/purl/1603510.
@article{osti_1603510,
title = {Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films},
author = {Chatterjee, Shouvik and Khalid, Shoaib and Inbar, Hadass S. and Goswami, Aranya and de Lima, Felipe Crasto and Sharan, Abhishek and Sabino, Fernando P. and Brown-Heft, Tobias L. and Chang, Yu-Hao and Fedorov, Alexei V. and Read, Dan and Janotti, Anderson and Palmstrøm, Christopher J.},
abstractNote = {Observation of large nonsaturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemission spectroscopy, and hybrid density functional theory we have unveiled the band structure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis.},
doi = {10.1103/PhysRevB.99.125134},
journal = {Physical Review B},
number = 12,
volume = 99,
place = {United States},
year = {Wed Mar 20 00:00:00 EDT 2019},
month = {Wed Mar 20 00:00:00 EDT 2019}
}
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