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Title: Basal-plane growth of cadmium arsenide by molecular beam epitaxy

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1546195
Grant/Contract Number:  
DEFG02-02ER45994
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 3 Journal Issue: 3; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, and Stemmer, Susanne. Basal-plane growth of cadmium arsenide by molecular beam epitaxy. United States: N. p., 2019. Web. doi:10.1103/PhysRevMaterials.3.031201.
Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, & Stemmer, Susanne. Basal-plane growth of cadmium arsenide by molecular beam epitaxy. United States. doi:10.1103/PhysRevMaterials.3.031201.
Kealhofer, David A., Kim, Honggyu, Schumann, Timo, Goyal, Manik, Galletti, Luca, and Stemmer, Susanne. Tue . "Basal-plane growth of cadmium arsenide by molecular beam epitaxy". United States. doi:10.1103/PhysRevMaterials.3.031201.
@article{osti_1546195,
title = {Basal-plane growth of cadmium arsenide by molecular beam epitaxy},
author = {Kealhofer, David A. and Kim, Honggyu and Schumann, Timo and Goyal, Manik and Galletti, Luca and Stemmer, Susanne},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.3.031201},
journal = {Physical Review Materials},
number = 3,
volume = 3,
place = {United States},
year = {2019},
month = {3}
}

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This content will become publicly available on March 18, 2020
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Works referenced in this record:

The 6.1Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004

  • Kroemer, Herbert
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
  • DOI: 10.1016/j.physe.2003.08.003