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Title: Planar Hall Effect in Antiferromagnetic MnTe Thin Films

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1546186
Grant/Contract Number:  
SC0012670; SC0016424
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 122 Journal Issue: 10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, and Wang, Kang L. Planar Hall Effect in Antiferromagnetic MnTe Thin Films. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.122.106602.
Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, & Wang, Kang L. Planar Hall Effect in Antiferromagnetic MnTe Thin Films. United States. doi:10.1103/PhysRevLett.122.106602.
Yin, Gen, Yu, Jie-Xiang, Liu, Yizhou, Lake, Roger K., Zang, Jiadong, and Wang, Kang L. Wed . "Planar Hall Effect in Antiferromagnetic MnTe Thin Films". United States. doi:10.1103/PhysRevLett.122.106602.
@article{osti_1546186,
title = {Planar Hall Effect in Antiferromagnetic MnTe Thin Films},
author = {Yin, Gen and Yu, Jie-Xiang and Liu, Yizhou and Lake, Roger K. and Zang, Jiadong and Wang, Kang L.},
abstractNote = {},
doi = {10.1103/PhysRevLett.122.106602},
journal = {Physical Review Letters},
number = 10,
volume = 122,
place = {United States},
year = {2019},
month = {3}
}

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This content will become publicly available on March 12, 2020
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Works referenced in this record:

Projector augmented-wave method
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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
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Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996