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Title: The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2

Journal Article · · ACS Nano
 [1];  [2];  [3];  [1];  [4]; ORCiD logo [1]
  1. Temple Univ., Philadelphia, PA (United States). Physics Dept.
  2. Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials
  3. Temple Univ., Philadelphia, PA (United States). Physics Dept.; Univ. of Salerno, Fisciano, Salerno (Italy). Physics Dept.
  4. Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials; Ohio Univ., Athens, OH (United States). Physics and Astronomy Dept.

The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of 2D materials into flexible electronics and next generation strain engineering devices. In this work we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. In this paper, we investigate such strain relaxation mechanisms that include 1D ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic-scale.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Complex Materials from First Principles (CCM); Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1546065
Journal Information:
ACS Nano, Vol. 13, Issue 7; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 27 works
Citation information provided by
Web of Science

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Cited By (1)

Engineering of electronic and optical properties of monolayer gallium sulfide/selenide in presence of intrinsic atomic defects journal January 2020

Figures / Tables (5)