Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design
Abstract
Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro-optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si-based devices of the smallest dimensions for novel device engineering is highly desirable. Here, the work presented here uses aberration-corrected electron-beam lithography combined with dry reactive ion etching to achieve both: patterning of 1-nm features and surface and volume plasmon engineering in Si. The nanofabrication technique employed here produces nanowires with a line edge roughness (LER) of 1 nm (3σ). In addition, this work demonstrates tuning of the Si volume plasmon energy by 1.2 eV from the bulk value, which is one order of magnitude higher than previous attempts of volume plasmon engineering using lithographic methods.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1546045
- Alternate Identifier(s):
- OSTI ID: 1532423
- Report Number(s):
- BNL-211915-2019-JAAM
Journal ID: ISSN 1616-301X
- Grant/Contract Number:
- SC0012704; DE‐SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 29; Journal Issue: 52; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 29 ENERGY PLANNING, POLICY AND ECONOMY; aberration correction; atomic scale; EELS; electron‐beam lithography; line edge roughness; nanofabrication; plasmonics; silicon patterning; volume plasmon
Citation Formats
Manfrinato, Vitor R., Camino, Fernando E., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design. United States: N. p., 2019.
Web. doi:10.1002/adfm.201903429.
Manfrinato, Vitor R., Camino, Fernando E., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., & Black, Charles T. Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design. United States. https://doi.org/10.1002/adfm.201903429
Manfrinato, Vitor R., Camino, Fernando E., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Mon .
"Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design". United States. https://doi.org/10.1002/adfm.201903429. https://www.osti.gov/servlets/purl/1546045.
@article{osti_1546045,
title = {Patterning Si at the 1 nm Length Scale with Aberration-Corrected Electron-Beam Lithography: Tuning of Plasmonic Properties by Design},
author = {Manfrinato, Vitor R. and Camino, Fernando E. and Stein, Aaron and Zhang, Lihua and Lu, Ming and Stach, Eric A. and Black, Charles T.},
abstractNote = {Patterning of materials at single nanometer resolution allows engineering of quantum confinement effects, as these effects are significant at these length scales, and yields direct control over electro-optical properties. Silicon is by far the most important material in electronics, and the ability to fabricate Si-based devices of the smallest dimensions for novel device engineering is highly desirable. Here, the work presented here uses aberration-corrected electron-beam lithography combined with dry reactive ion etching to achieve both: patterning of 1-nm features and surface and volume plasmon engineering in Si. The nanofabrication technique employed here produces nanowires with a line edge roughness (LER) of 1 nm (3σ). In addition, this work demonstrates tuning of the Si volume plasmon energy by 1.2 eV from the bulk value, which is one order of magnitude higher than previous attempts of volume plasmon engineering using lithographic methods.},
doi = {10.1002/adfm.201903429},
journal = {Advanced Functional Materials},
number = 52,
volume = 29,
place = {United States},
year = {2019},
month = {7}
}
Web of Science
Figures / Tables:

Works referenced in this record:
Bulk and surface plasmons in solids
journal, May 1995
- Quinn, J. J.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 96, Issue 3-4
Optical absorption and emission of silicon nanocrystals: From single to collective response
journal, April 2013
- Guerra, Roberto; Cigarini, Francesco; Ossicini, Stefano
- Journal of Applied Physics, Vol. 113, Issue 14
Statistical- and image-noise effects on experimental spectrum of line-edge and line-width roughness
journal, October 2010
- Nishida, Akio
- Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 9, Issue 4
Discrete power spectrum of line width roughness
journal, October 2009
- Hiraiwa, A.; Nishida, A.
- Journal of Applied Physics, Vol. 106, Issue 7
Theoretical analysis of line-edge roughness using FFT techniques
conference, June 1999
- Ohfuji, Takeshi; Endo, Masayuki; Morimoto, Hiroaki
- Microlithography '99, SPIE Proceedings
From active plasmonic devices to plasmonic molecular electronics
journal, October 2018
- Lacroix, Jean‐Christophe; van Nguyen, Quynh; Ai, Yong
- Polymer International, Vol. 68, Issue 4
Line shape of the volume plasmons of silicon and germanium
journal, April 1979
- Hinz, H. -J.; Raether, H.
- Thin Solid Films, Vol. 58, Issue 2
I n s i t u vaporization of very low molecular weight resists using 1/2 nm diameter electron beams
journal, November 1981
- Isaacson, M.; Muray, A.
- Journal of Vacuum Science and Technology, Vol. 19, Issue 4
Approaching the Resolution Limit of Nanometer-Scale Electron Beam-Induced Deposition
journal, July 2005
- van Dorp, Willem F.; van Someren, Bob; Hagen, Cornelis W.
- Nano Letters, Vol. 5, Issue 7
A single-atom transistor
journal, February 2012
- Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta
- Nature Nanotechnology, Vol. 7, Issue 4
About the influence of Line Edge Roughness on measured effective–CD
journal, January 2011
- Bilski, Bartosz; Frenner, Karsten; Osten, Wolfgang
- Optics Express, Vol. 19, Issue 21
Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy
journal, April 2012
- Azarnouche, L.; Pargon, E.; Menguelti, K.
- Journal of Applied Physics, Vol. 111, Issue 8
Mechanistic Studies of Plasmon Chemistry on Metal Catalysts
journal, February 2019
- Kazuma, Emiko; Kim, Yousoo
- Angewandte Chemie International Edition, Vol. 58, Issue 15
Sub-50-nm self-assembled nanotextures for enhanced broadband antireflection in silicon solar cells
journal, January 2015
- Rahman, Atikur; Ashraf, Ahsan; Xin, Huolin
- Nature Communications, Vol. 6, Issue 1
Nanostructured metals for light-based technologies
journal, March 2019
- Gordon, Reuven
- Nanotechnology, Vol. 30, Issue 21
Chemically Enhancing Block Copolymers for Block-Selective Synthesis of Self-Assembled Metal Oxide Nanostructures
journal, December 2012
- Kamcev, Jovan; Germack, David S.; Nykypanchuk, Dmytro
- ACS Nano, Vol. 7, Issue 1
Surface plasmons and breakdown in thin silicon dioxide films on silicon
journal, August 1998
- Kim, Jong-Hyun; Sanchez, Julian J.; DeMassa, Thomas A.
- Journal of Applied Physics, Vol. 84, Issue 3
Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene
journal, July 2018
- Stanford, Michael G.; Rack, Philip D.; Jariwala, Deep
- npj 2D Materials and Applications, Vol. 2, Issue 1
Optical properties of nanostructured materials: a review
journal, January 2011
- Flory, François
- Journal of Nanophotonics, Vol. 5, Issue 1
Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness
journal, May 2003
- Asenov, A.; Kaya, S.; Brown, A. R.
- IEEE Transactions on Electron Devices, Vol. 50, Issue 5
Probing Nanoparticle Plasmons with Electron Energy Loss Spectroscopy
journal, December 2017
- Wu, Yueying; Li, Guoliang; Camden, Jon P.
- Chemical Reviews, Vol. 118, Issue 6
Large-Area Metal Gaps and Their Optical Applications
journal, August 2018
- Bahk, Young-Mi; Kim, Dai-Sik; Park, Hyeong-Ryeol
- Advanced Optical Materials, Vol. 7, Issue 1
Ab initio energy loss spectra of Si and Ge nanowires
journal, January 2015
- Palummo, Maurizia; Hogan, Conor; Ossicini, Stefano
- Physical Chemistry Chemical Physics, Vol. 17, Issue 43
Low-Magnetic-Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
journal, January 2019
- Veyrat, Louis; Jordan, Anna; Zimmermann, Katrin
- Nano Letters, Vol. 19, Issue 2
Aberration-Corrected Electron Beam Lithography at the One Nanometer Length Scale
journal, April 2017
- Manfrinato, Vitor R.; Stein, Aaron; Zhang, Lihua
- Nano Letters, Vol. 17, Issue 8
Determination of line edge roughness in low-dose top-down scanning electron microscopy images
journal, July 2014
- Verduin, Thomas; Kruit, Pieter; Hagen, Cornelis W.
- Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 13, Issue 3
High-Yield, Ultrafast, Surface Plasmon-Enhanced, Au Nanorod Optical Field Electron Emitter Arrays
journal, November 2014
- Hobbs, Richard G.; Yang, Yujia; Fallahi, Arya
- ACS Nano, Vol. 8, Issue 11
Atomic precision lithography on Si
journal, January 2009
- Randall, J. N.; Lyding, J. W.; Schmucker, S.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6
Systematic errors in the measurement of power spectral density
journal, July 2013
- Mack, Chris A.
- Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 12, Issue 3
From Si Nanowires to Porous Silicon: The Role of Excitonic Effects
journal, January 2007
- Bruno, Mauro; Palummo, Maurizia; Marini, Andrea
- Physical Review Letters, Vol. 98, Issue 3
Nonlocal effects in the plasmons of nanowires and nanocavities excited by fast electron beams
journal, July 2008
- Aizpurua, Javier; Rivacoba, Alberto
- Physical Review B, Vol. 78, Issue 3
Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
journal, March 2013
- Manfrinato, Vitor R.; Zhang, Lihua; Su, Dong
- Nano Letters, Vol. 13, Issue 4
Atom-by-Atom Construction of a Cyclic Artificial Molecule in Silicon
journal, November 2018
- Wyrick, Jonathan; Wang, Xiqiao; Namboodiri, Pradeep
- Nano Letters, Vol. 18, Issue 12
High-Energy Surface and Volume Plasmons in Nanopatterned Sub-10 nm Aluminum Nanostructures
journal, June 2016
- Hobbs, Richard G.; Manfrinato, Vitor R.; Yang, Yujia
- Nano Letters, Vol. 16, Issue 7
Using high-contrast salty development of hydrogen silsesquioxane for sub-10-nm half-pitch lithography
journal, January 2007
- Yang, Joel K. W.; Berggren, Karl K.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 6
Mechanistic Studies of Plasmon Chemistry on Metal Catalysts
journal, April 2019
- Kazuma, Emiko; Kim, Yousoo
- Angewandte Chemie, Vol. 131, Issue 15
Systematic errors in the measurement of power spectral density
conference, April 2013
- Mack, Chris A.
- SPIE Advanced Lithography, SPIE Proceedings
Determination of line edge roughness in low dose top-down scanning electron microscopy images
conference, April 2014
- Verduin, T.; Kruit, P.; Hagen, C. W.
- SPIE Advanced Lithography, SPIE Proceedings
Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene
text, January 2018
- Veyrat, Louis; Jordan, Anna; Zimmermann, Katrin
- arXiv
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