Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

doi:10.3390/ma12152455

Title: Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Abstract

Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al2O3 templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 × 1014 atoms/cm3 (prepared at a growth rate of 0.57 µm/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.

Authors:

;

; McCarthy, Robert; Youtsey, Chris; Wang, Jingshan;

; Xie, Jinqiao;

Publication Date:: 2019-08-01

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1545967

Grant/Contract Number:: AR0000446

Resource Type:: Published Article

Journal Name:: Materials

Additional Journal Information:: Journal Name: Materials Journal Volume: 12 Journal Issue: 15; Journal ID: ISSN 1996-1944

Publisher:: MDPI AG

Country of Publication:: Switzerland

Language:: English

Citation Formats


                    Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, and Guido, Louis. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE.  Switzerland: N. p., 2019. 
        Web.  doi:10.3390/ma12152455.

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                    Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, & Guido, Louis. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE.  Switzerland.  doi:10.3390/ma12152455.

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                    Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, and Guido, Louis. Thu .  
        "Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE".  Switzerland.  doi:10.3390/ma12152455.

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@article{osti_1545967,

  title        = {Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE},

  author       = {Ciarkowski, Timothy and Allen, Noah and Carlson, Eric and McCarthy, Robert and Youtsey, Chris and Wang, Jingshan and Fay, Patrick and Xie, Jinqiao and Guido, Louis},

  abstractNote = {Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in several cases, identical growths were performed on GaN-on-Al2O3 templates for comparison purposes). Growth conditions with different growth efficiencies but identical ammonia molar flows, when normalized for growth rate, resulted in identical carbon incorporation. It is concluded that only trimethylgallium which contributes to growth of the GaN layer contributes to carbon incorporation. Carbon incorporation was found to decrease proportionally with increasing ammonia molar flow, when normalized for growth rate. Ammonia molar flow divided by growth rate is proposed as a reactor independent predictor of carbon incorporation as opposed to the often-reported input V/III ratio. A low carbon concentration of 7.3 × 1014 atoms/cm3 (prepared at a growth rate of 0.57 µm/h) was obtained by optimizing growth conditions for GaN grown on pseudo-bulk GaN substrates.},

  doi          = {10.3390/ma12152455},

  journal      = {Materials},

  number       = 15,

  volume       = 12,

  place        = {Switzerland},

  year         = {2019},

  month        = {8}

}

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Works referenced in this record:

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Similar Records

Title: Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Abstract

Citation Formats

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates journal, July 2010

First-principles calculations for defects and impurities: Applications to III-nitrides journal, April 2004

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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates journal, March 2015

Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy journal, May 1996

Vertical Power p-n Diodes Based on Bulk GaN journal, February 2015

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition journal, March 2008

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride journal, January 2016

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN journal, January 2000

Growth and characterization of GaN PiN rectifiers on free-standing GaN journal, August 2005

Role of carbon in GaN journal, December 2002

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD journal, November 2016

High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates journal, January 2007

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition journal, December 2016

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN journal, July 2002

High growth rate metal organic vapor phase epitaxy GaN journal, August 2008

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Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition journal, September 2016

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates
journal, March 2015

Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy
journal, May 1996

Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition
journal, March 2008

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride
journal, January 2016

SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
journal, January 2000

Growth and characterization of GaN PiN rectifiers on free-standing GaN
journal, August 2005

Role of carbon in GaN
journal, December 2002

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD
journal, November 2016

High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates
journal, January 2007

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
journal, December 2016

Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
journal, July 2002

High growth rate metal organic vapor phase epitaxy GaN
journal, August 2008

The electron mobility and compensation in n-type GaN
journal, March 1998

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
journal, September 2016