Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate
Abstract
Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO 2 island.
- Authors:
-
[1];
[1]
- Department of Electrical and Computer Engineering, The George Washington University, Washington, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- OSTI Identifier:
- 1545399
- Grant/Contract Number:
- SC0017831
- Resource Type:
- Published Article
- Journal Name:
- Nanoscale Advances
- Additional Journal Information:
- Journal Name: Nanoscale Advances Journal Volume: 1 Journal Issue: 9; Journal ID: ISSN 2516-0230
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Dong, Boqun, and Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom: N. p., 2019.
Web. doi:10.1039/C9NA00281B.
Dong, Boqun, & Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom. doi:10.1039/C9NA00281B.
Dong, Boqun, and Zaghloul, Mona E. Wed .
"Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate". United Kingdom. doi:10.1039/C9NA00281B.
@article{osti_1545399,
title = {Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate},
author = {Dong, Boqun and Zaghloul, Mona E.},
abstractNote = {Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO 2 island.},
doi = {10.1039/C9NA00281B},
journal = {Nanoscale Advances},
number = 9,
volume = 1,
place = {United Kingdom},
year = {2019},
month = {9}
}
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DOI: 10.1039/C9NA00281B
DOI: 10.1039/C9NA00281B
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