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Title: Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate

Abstract

Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO 2 island.

Authors:
ORCiD logo [1]; ORCiD logo [1]
  1. Department of Electrical and Computer Engineering, The George Washington University, Washington, USA
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP)
OSTI Identifier:
1545399
Grant/Contract Number:  
SC0017831
Resource Type:
Published Article
Journal Name:
Nanoscale Advances
Additional Journal Information:
Journal Name: Nanoscale Advances Journal Volume: 1 Journal Issue: 9; Journal ID: ISSN 2516-0230
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Dong, Boqun, and Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom: N. p., 2019. Web. doi:10.1039/C9NA00281B.
Dong, Boqun, & Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom. doi:10.1039/C9NA00281B.
Dong, Boqun, and Zaghloul, Mona E. Wed . "Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate". United Kingdom. doi:10.1039/C9NA00281B.
@article{osti_1545399,
title = {Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate},
author = {Dong, Boqun and Zaghloul, Mona E.},
abstractNote = {Enhancement of SAWs propagating along the surface of a highly doped p-type GaAs substrate is achieved using a ZnO/SiO 2 island.},
doi = {10.1039/C9NA00281B},
journal = {Nanoscale Advances},
number = 9,
volume = 1,
place = {United Kingdom},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C9NA00281B

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