Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate
Abstract
Surface acoustic waves (SAWs) have been widely studied due to their unique advantage to couple the mechanical, electrical, and optical characteristics of semiconductor materials and have successfully been used in many industrial applications. In this work, we report a design that uses piezoelectric material Zinc Oxide (ZnO) to enhance the generation and propagation of SAWs on the surface of a highly doped p-type Gallium Arsenide (GaAs) substrate, which is more extensively used in optoelectronic devices than intrinsic GaAs structures. To maximize the piezoelectricity and successfully generate SAWs, high quality c-axis orientation of the ZnO film is needed; thus we experiment and develop optimized recipes of a radio frequency (RF) magnetron sputtering system to deposit ZnO on the GaAs substrate. To further optimize the SAW performance, an intermediate Silicon Oxide (SiO2) layer is added between the ZnO film and GaAs substrate. Additionally, we test samples with varied thickness of ZnO films and dimensions of interdigital transducer (IDT) fingers to figure out their individual effect on SAW properties. The results and techniques demonstrated in this paper will provide guidance for further studies on enhancing SAWs propagating along many other doped semiconductor materials. This combination of acoustics and optoelectronics in doped semiconductors ismore »
- Authors:
-
[1];
[1]
- Department of Electrical and Computer Engineering, The George Washington University, Washington, USA
- Publication Date:
- Research Org.:
- Muplus, Inc., Newport News, VA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- OSTI Identifier:
- 1545399
- Alternate Identifier(s):
- OSTI ID: 1904405
- Grant/Contract Number:
- SC0017831
- Resource Type:
- Published Article
- Journal Name:
- Nanoscale Advances
- Additional Journal Information:
- Journal Name: Nanoscale Advances Journal Volume: 1 Journal Issue: 9; Journal ID: ISSN 2516-0230
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; chemistry; science & technology; materials science
Citation Formats
Dong, Boqun, and Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom: N. p., 2019.
Web. doi:10.1039/C9NA00281B.
Dong, Boqun, & Zaghloul, Mona E. Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate. United Kingdom. https://doi.org/10.1039/C9NA00281B
Dong, Boqun, and Zaghloul, Mona E. Wed .
"Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate". United Kingdom. https://doi.org/10.1039/C9NA00281B.
@article{osti_1545399,
title = {Generation and enhancement of surface acoustic waves on a highly doped p-type GaAs substrate},
author = {Dong, Boqun and Zaghloul, Mona E.},
abstractNote = {Surface acoustic waves (SAWs) have been widely studied due to their unique advantage to couple the mechanical, electrical, and optical characteristics of semiconductor materials and have successfully been used in many industrial applications. In this work, we report a design that uses piezoelectric material Zinc Oxide (ZnO) to enhance the generation and propagation of SAWs on the surface of a highly doped p-type Gallium Arsenide (GaAs) substrate, which is more extensively used in optoelectronic devices than intrinsic GaAs structures. To maximize the piezoelectricity and successfully generate SAWs, high quality c-axis orientation of the ZnO film is needed; thus we experiment and develop optimized recipes of a radio frequency (RF) magnetron sputtering system to deposit ZnO on the GaAs substrate. To further optimize the SAW performance, an intermediate Silicon Oxide (SiO2) layer is added between the ZnO film and GaAs substrate. Additionally, we test samples with varied thickness of ZnO films and dimensions of interdigital transducer (IDT) fingers to figure out their individual effect on SAW properties. The results and techniques demonstrated in this paper will provide guidance for further studies on enhancing SAWs propagating along many other doped semiconductor materials. This combination of acoustics and optoelectronics in doped semiconductors is a promising start to building enhanced and hybrid devices in various fields.},
doi = {10.1039/C9NA00281B},
journal = {Nanoscale Advances},
number = 9,
volume = 1,
place = {United Kingdom},
year = {Wed Sep 11 00:00:00 EDT 2019},
month = {Wed Sep 11 00:00:00 EDT 2019}
}
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