Structures and electronic properties of domain walls in BiFeO3 thin films
Abstract
Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.
- Authors:
-
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA
- Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, USA, Department of Physics and Astronomy, University of California, Irvine, CA 92697, USA, Irvine Materials Research Institute, University of California, Irvine, CA 92697, USA
- Publication Date:
- Research Org.:
- Univ. of California, Irvine, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1562604
- Alternate Identifier(s):
- OSTI ID: 1545176; OSTI ID: 1612196
- Grant/Contract Number:
- SC0014430
- Resource Type:
- Published Article
- Journal Name:
- National Science Review
- Additional Journal Information:
- Journal Name: National Science Review Journal Volume: 6 Journal Issue: 4; Journal ID: ISSN 2095-5138
- Publisher:
- Oxford University Press
- Country of Publication:
- China
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; science and technology; domain wall; BiFeO3; ferroelectric; conductivity; photovoltaics; thin film
Citation Formats
Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, and Pan, Xiaoqing. Structures and electronic properties of domain walls in BiFeO3 thin films. China: N. p., 2019.
Web. doi:10.1093/nsr/nwz101.
Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, & Pan, Xiaoqing. Structures and electronic properties of domain walls in BiFeO3 thin films. China. https://doi.org/10.1093/nsr/nwz101
Huyan, Huaixun, Li, Linze, Addiego, Christopher, Gao, Wenpei, and Pan, Xiaoqing. Wed .
"Structures and electronic properties of domain walls in BiFeO3 thin films". China. https://doi.org/10.1093/nsr/nwz101.
@article{osti_1562604,
title = {Structures and electronic properties of domain walls in BiFeO3 thin films},
author = {Huyan, Huaixun and Li, Linze and Addiego, Christopher and Gao, Wenpei and Pan, Xiaoqing},
abstractNote = {Abstract Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO3 thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.},
doi = {10.1093/nsr/nwz101},
journal = {National Science Review},
number = 4,
volume = 6,
place = {China},
year = {Wed Jul 10 00:00:00 EDT 2019},
month = {Wed Jul 10 00:00:00 EDT 2019}
}
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