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Title: Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Authors:
; ; ORCiD logo; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1544916
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 27 Journal Issue: 16; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. United States: N. p., 2019. Web. doi:10.1364/OE.27.022764.
Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, & DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. United States. doi:10.1364/OE.27.022764.
Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Thu . "Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN". United States. doi:10.1364/OE.27.022764.
@article{osti_1544916,
title = {Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN},
author = {Anderson, Ryan and Cohen, Daniel and Mehari, Shlomo and Nakamura, Shuji and DenBaars, Steven},
abstractNote = {},
doi = {10.1364/OE.27.022764},
journal = {Optics Express},
number = 16,
volume = 27,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OE.27.022764

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Works referenced in this record:

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
journal, December 2009

  • Tyagi, Anurag; Wu, Feng; Young, Erin C.
  • Applied Physics Letters, Vol. 95, Issue 25, Article No. 251905
  • DOI: 10.1063/1.3275717

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example
journal, June 2015