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Title: Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Abstract

We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar ($$20\overline{21}$$) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x1018 cm-3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm-1 was found.

Authors:
; ; ORCiD logo; ;
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1544916
Alternate Identifier(s):
OSTI ID: 1613681
Grant/Contract Number:  
AR0000671
Resource Type:
Published Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Name: Optics Express Journal Volume: 27 Journal Issue: 16; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Optics

Citation Formats

Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. United States: N. p., 2019. Web. doi:10.1364/OE.27.022764.
Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, & DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. United States. doi:10.1364/OE.27.022764.
Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Thu . "Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN". United States. doi:10.1364/OE.27.022764.
@article{osti_1544916,
title = {Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN},
author = {Anderson, Ryan and Cohen, Daniel and Mehari, Shlomo and Nakamura, Shuji and DenBaars, Steven},
abstractNote = {We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar ($20\overline{21}$) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x1018 cm-3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm-1 was found.},
doi = {10.1364/OE.27.022764},
journal = {Optics Express},
number = 16,
volume = 27,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1364/OE.27.022764

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Cited by: 1 work
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