Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Anderson, Ryan; Cohen, Daniel; Mehari, Shlomo; Nakamura, Shuji; DenBaars, Steven

doi:10.1364/OE.27.022764

Title: Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Abstract

We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar ($$20\overline{21}$$) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x10¹⁸ cm^-3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm^-1 was found.

Authors:

Anderson, Ryan; Cohen, Daniel;

; Nakamura, Shuji; DenBaars, Steven

Publication Date:: Thu Jul 25 00:00:00 EDT 2019

Research Org.:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1544916

Alternate Identifier(s):: OSTI ID: 1613681

Grant/Contract Number:: AR0000671

Resource Type:: Published Article

Journal Name:: Optics Express

Additional Journal Information:: Journal Name: Optics Express Journal Volume: 27 Journal Issue: 16; Journal ID: ISSN 1094-4087

Publisher:: Optical Society of America

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Optics

Citation Formats


                    Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN.  United States: N. p., 2019. 
Web.  doi:10.1364/OE.27.022764.

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                    Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, & DenBaars, Steven. Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN.  United States.  https://doi.org/10.1364/OE.27.022764

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                    Anderson, Ryan, Cohen, Daniel, Mehari, Shlomo, Nakamura, Shuji, and DenBaars, Steven. Thu .  
"Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN".  United States.  https://doi.org/10.1364/OE.27.022764.

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@article{osti_1544916,

  title        = {Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN},

  author       = {Anderson, Ryan and Cohen, Daniel and Mehari, Shlomo and Nakamura, Shuji and DenBaars, Steven},

  abstractNote = {We report observations of lateral mode confinement by a tapering nanoporous-GaN layer in the n-side cladding of a blue-emitting InGaN laser diode grown on the semipolar ($20\overline{21}$) plane of bulk GaN. Little additional confinement occurred in the transverse direction, and the nanoporous layer did not serve as a current aperture. Nanoporous-GaN, with Si-doping of 8x1018 cm-3 and 20% porosity had a bulk resistivity of 3 Ω-cm and a thermal conductivity of 4 W/m-K, in general agreement with data reported on c-plane VCSEL structures. An excess modal loss of 19 cm-1 was found.},

  doi          = {10.1364/OE.27.022764},

  journal      = {Optics Express},

  number       = 16,

  volume       = 27,

  place        = {United States},

  year         = {Thu Jul 25 00:00:00 EDT 2019},

  month        = {Thu Jul 25 00:00:00 EDT 2019}

}

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Works referenced in this record:

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
journal, October 2012

Young, Erin C.; Wu, Feng; Romanov, Alexey E.
Applied Physics Letters, Vol. 101, Issue 14
DOI: 10.1063/1.4757423

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
journal, December 2009

Tyagi, Anurag; Wu, Feng; Young, Erin C.
Applied Physics Letters, Vol. 95, Issue 25, Article No. 251905
DOI: 10.1063/1.3275717

A resonant-cavity blue-violet light-emitting diode with conductive nanoporous distributed Bragg reflector: A resonant-cavity blue-violet light-emitting diode
journal, February 2017

Zhang, Cheng; Xiong, Kanglin; Yuan, Ge
physica status solidi (a), Vol. 214, Issue 8
DOI: 10.1002/pssa.201600866

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device
journal, October 2014

Kim, Jaehwan; Min, Daehong; Jang, Jongjin
Journal of Applied Physics, Vol. 116, Issue 16
DOI: 10.1063/1.4900738

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture
journal, March 2015

Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.
Applied Physics Express, Vol. 8, Issue 4
DOI: 10.7567/APEX.8.042701

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
journal, February 2019

Mishkat-Ul-Masabih, Saadat M.; Aragon, Andrew A.; Monavarian, Morteza
Applied Physics Express, Vol. 12, Issue 3
DOI: 10.7567/1882-0786/ab0576

Strain-induced polarization in wurtzite III-nitride semipolar layers
journal, July 2006

Romanov, A. E.; Baker, T. J.; Nakamura, S.
Journal of Applied Physics, Vol. 100, Issue 2
DOI: 10.1063/1.2218385

Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes
journal, January 2012

Melo, T.; Hu, Y-L; Weisbuch, C.
Semiconductor Science and Technology, Vol. 27, Issue 2
DOI: 10.1088/0268-1242/27/2/024015

Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
conference, February 2016

Kawaguchi, Masao; Imafuji, Osamu; Nozaki, Shinichiro
SPIE OPTO, SPIE Proceedings
DOI: 10.1117/12.2212011

Light Waves in Thin Films and Integrated Optics
journal, January 1971

Tien, P. K.
Applied Optics, Vol. 10, Issue 11
DOI: 10.1364/AO.10.002395

High-Speed Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
journal, October 2010

Hofmann, W.
IEEE Photonics Journal, Vol. 2, Issue 5
DOI: 10.1109/JPHOT.2010.2055554

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example
journal, June 2015

Zhang, Cheng; Park, Sung Hyun; Chen, Danti
ACS Photonics, Vol. 2, Issue 7, p. 980-986
DOI: 10.1021/acsphotonics.5b00216

Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
journal, December 2012

Hardy, Matthew T.; Nakamura, Shuji; Speck, James S.
Applied Physics Letters, Vol. 101, Issue 24
DOI: 10.1063/1.4770367

Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
journal, May 2012

Hardy, Matthew T.; Hsu, Po Shan; Wu, Feng
Applied Physics Letters, Vol. 100, Issue 20
DOI: 10.1063/1.4716465

Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN
journal, July 2016

Yuan, Ge; Xiong, Kanglin; Zhang, Cheng
ACS Photonics, Vol. 3, Issue 9
DOI: 10.1021/acsphotonics.6b00155

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers
journal, January 2018

Mehari, Shlomo; Cohen, Daniel A.; Becerra, Daniel L.
Optics Express, Vol. 26, Issue 2
DOI: 10.1364/OE.26.001564

Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region
journal, January 2019

Mehari, Shlomo; Cohen, Daniel A.; Becerra, Daniel L.
Japanese Journal of Applied Physics, Vol. 58, Issue 2
DOI: 10.7567/1347-4065/aaf4b4

Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN
journal, July 2015

Kuritzky, Leah Y.; Speck, James S.
MRS Communications, Vol. 5, Issue 3
DOI: 10.1557/mrc.2015.53

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Similar Records

Title: Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN

Abstract

Citation Formats

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission journal, October 2012

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates journal, December 2009

A resonant-cavity blue-violet light-emitting diode with conductive nanoporous distributed Bragg reflector: A resonant-cavity blue-violet light-emitting diode journal, February 2017

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device journal, October 2014

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture journal, March 2015

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors journal, February 2019

Strain-induced polarization in wurtzite III-nitride semipolar layers journal, July 2006

Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes journal, January 2012

Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure conference, February 2016

Light Waves in Thin Films and Integrated Optics journal, January 1971

High-Speed Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers journal, October 2010

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example journal, June 2015

Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy journal, December 2012

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Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN journal, July 2016

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers journal, January 2018

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Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN journal, July 2015

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
journal, October 2012

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
journal, December 2009

A resonant-cavity blue-violet light-emitting diode with conductive nanoporous distributed Bragg reflector: A resonant-cavity blue-violet light-emitting diode
journal, February 2017

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device
journal, October 2014

Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture
journal, March 2015

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors
journal, February 2019

Strain-induced polarization in wurtzite III-nitride semipolar layers
journal, July 2006

Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes
journal, January 2012

Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
conference, February 2016

Light Waves in Thin Films and Integrated Optics
journal, January 1971

High-Speed Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
journal, October 2010

Mesoporous GaN for Photonic Engineering—Highly Reflective GaN Mirrors as an Example
journal, June 2015

Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
journal, December 2012

Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
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Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN
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Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers
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Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region
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Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN
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