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Title: Polaronic Resistive Switching in Ceria‐Based Memory Devices

Authors:
 [1];  [2];  [2];  [1];  [3]; ORCiD logo [2]
  1. Materials Computation Center General Research Institute for Nonferrous Metals Beijing 100088 China
  2. School of Physics Beihang University Beijing 100191 China
  3. Department of Materials Science and Engineering University of Utah Salt Lake City UT 84112 USA, Collaborative Innovation Center of Quantum Matter Beijing 100084 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1544890
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 10; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, and Zhou, Miao. Polaronic Resistive Switching in Ceria‐Based Memory Devices. United States: N. p., 2019. Web. https://doi.org/10.1002/aelm.201900271.
Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, & Zhou, Miao. Polaronic Resistive Switching in Ceria‐Based Memory Devices. United States. https://doi.org/10.1002/aelm.201900271
Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, and Zhou, Miao. Mon . "Polaronic Resistive Switching in Ceria‐Based Memory Devices". United States. https://doi.org/10.1002/aelm.201900271.
@article{osti_1544890,
title = {Polaronic Resistive Switching in Ceria‐Based Memory Devices},
author = {Sun, Lu and Hao, Xiamin and Meng, Qingling and Wang, Ligen and Liu, Feng and Zhou, Miao},
abstractNote = {},
doi = {10.1002/aelm.201900271},
journal = {Advanced Electronic Materials},
number = 10,
volume = 5,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/aelm.201900271

Citation Metrics:
Cited by: 2 works
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