Polaronic Resistive Switching in Ceria‐Based Memory Devices

Sun, Lu; Hao, Xiamin; Meng, Qingling; Wang, Ligen; Liu, Feng; Zhou, Miao

doi:10.1002/aelm.201900271

Title: Polaronic Resistive Switching in Ceria‐Based Memory Devices

Journal Article · 22 July 2019 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.201900271 · OSTI ID:1544890

Sun, Lu ^[1]; Hao, Xiamin ^[2]; Meng, Qingling ^[2]; Wang, Ligen ^[1]; Liu, Feng ^[3];

^[2]

Materials Computation Center General Research Institute for Nonferrous Metals Beijing 100088 China
School of Physics Beihang University Beijing 100191 China
Department of Materials Science and Engineering University of Utah Salt Lake City UT 84112 USA, Collaborative Innovation Center of Quantum Matter Beijing 100084 China

Abstract Resistive random access memory (RRAM), or memristors, operating with a voltage‐controlled low‐ and high‐resistance state (ON/OFF), are a critical component for next‐generation nanoelectronics. Most memristors are based on oxides, but the underlying working mechanism remains generally unclear. Using first‐principles calculations, it is revealed that it is polaron that acts as the conducting species to mediate the resistive switching process in CeO ₂ , while the commonly believed oxygen vacancy ( V _O ²⁺ ) plays only a secondary role in assisting polaron formation. Importantly, polaron and related complexes have desired low formation energies (≈−0.3 eV) and extremely small migration barriers (≈0.1 eV), to synergistically form conductive filaments in the CeO ₂ matrix with shallow electronic states near Fermi level, while V _O ²⁺ has a much higher migration energy and does not change the insulating nature of CeO ₂ . A switching field is also estimated of ≈3 V between the ON/OFF states from the relative stability of V _O ²⁺ , H _int ⁺ /H _sub ⁺ (institutional/substitutional hydrogen) and polaron complexes in reference to Fermi level, which agrees with experiments. The proposed polaron‐based switching mechanism is general, paving the way for future understanding and design of multifunctional electronic nanodevices beyond RRAM.

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Sponsoring Organization:: USDOE

OSTI ID:: 1544890

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 5 Journal Issue: 10; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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