Polaronic Resistive Switching in Ceria‐Based Memory Devices
Abstract
Abstract Resistive random access memory (RRAM), or memristors, operating with a voltage‐controlled low‐ and high‐resistance state (ON/OFF), are a critical component for next‐generation nanoelectronics. Most memristors are based on oxides, but the underlying working mechanism remains generally unclear. Using first‐principles calculations, it is revealed that it is polaron that acts as the conducting species to mediate the resistive switching process in CeO 2 , while the commonly believed oxygen vacancy ( V O 2+ ) plays only a secondary role in assisting polaron formation. Importantly, polaron and related complexes have desired low formation energies (≈−0.3 eV) and extremely small migration barriers (≈0.1 eV), to synergistically form conductive filaments in the CeO 2 matrix with shallow electronic states near Fermi level, while V O 2+ has a much higher migration energy and does not change the insulating nature of CeO 2 . A switching field is also estimated of ≈3 V between the ON/OFF states from the relative stability of V O 2+ , H int + /H sub + (institutional/substitutional hydrogen) and polaron complexes in reference to Fermi level, which agrees with experiments. The proposed polaron‐based switching mechanism is general, paving the way for future understanding and design of multifunctionalmore »
- Authors:
-
[2]
- Materials Computation Center General Research Institute for Nonferrous Metals Beijing 100088 China
- School of Physics Beihang University Beijing 100191 China
- Department of Materials Science and Engineering University of Utah Salt Lake City UT 84112 USA, Collaborative Innovation Center of Quantum Matter Beijing 100084 China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1544890
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 10; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, and Zhou, Miao. Polaronic Resistive Switching in Ceria‐Based Memory Devices. United States: N. p., 2019.
Web. doi:10.1002/aelm.201900271.
Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, & Zhou, Miao. Polaronic Resistive Switching in Ceria‐Based Memory Devices. United States. https://doi.org/10.1002/aelm.201900271
Sun, Lu, Hao, Xiamin, Meng, Qingling, Wang, Ligen, Liu, Feng, and Zhou, Miao. Mon .
"Polaronic Resistive Switching in Ceria‐Based Memory Devices". United States. https://doi.org/10.1002/aelm.201900271.
@article{osti_1544890,
title = {Polaronic Resistive Switching in Ceria‐Based Memory Devices},
author = {Sun, Lu and Hao, Xiamin and Meng, Qingling and Wang, Ligen and Liu, Feng and Zhou, Miao},
abstractNote = {Abstract Resistive random access memory (RRAM), or memristors, operating with a voltage‐controlled low‐ and high‐resistance state (ON/OFF), are a critical component for next‐generation nanoelectronics. Most memristors are based on oxides, but the underlying working mechanism remains generally unclear. Using first‐principles calculations, it is revealed that it is polaron that acts as the conducting species to mediate the resistive switching process in CeO 2 , while the commonly believed oxygen vacancy ( V O 2+ ) plays only a secondary role in assisting polaron formation. Importantly, polaron and related complexes have desired low formation energies (≈−0.3 eV) and extremely small migration barriers (≈0.1 eV), to synergistically form conductive filaments in the CeO 2 matrix with shallow electronic states near Fermi level, while V O 2+ has a much higher migration energy and does not change the insulating nature of CeO 2 . A switching field is also estimated of ≈3 V between the ON/OFF states from the relative stability of V O 2+ , H int + /H sub + (institutional/substitutional hydrogen) and polaron complexes in reference to Fermi level, which agrees with experiments. The proposed polaron‐based switching mechanism is general, paving the way for future understanding and design of multifunctional electronic nanodevices beyond RRAM.},
doi = {10.1002/aelm.201900271},
journal = {Advanced Electronic Materials},
number = 10,
volume = 5,
place = {United States},
year = {Mon Jul 22 00:00:00 EDT 2019},
month = {Mon Jul 22 00:00:00 EDT 2019}
}
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