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Title: Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films

Abstract

Zinc tin nitride (ZnSnN2) is an emerging ternary nitride semiconductor studied for applications in solar cells, light-emitting diodes, and other optoelectronic devices. For all of these applications, the charge carrier mobility is an important property. Yet, the dominant electron scattering mechanisms in ZnSnN2 are unclear, especially in the presence of oxygen that is often incorporated during thin film sputter deposition of this material. Moreover, there are no experimental reports on the concentration of defects in such polycrystalline sputtered zinc tin oxynitride Zn1+xSn1-xN2-2xO2x (ZTNO) thin films. Here, we address both of these questions using temperature-dependent Hall effect measurements of sputtered ZTNO thin films as a function of Zn composition and O content. The measured temperature dependence of the mobility is fitted to scattering on ionized and neutral defects and to grain boundary scattering. The results suggest that ZTNO is a heavily compensated semiconductor, with a high density of neutral defects dominating the electron scattering processes. First principles theoretical calculations indicate that these neutral defects are likely to originate from the abundant ZnSn-2ON complexes in the ZTNO material. Overall, these results establish the dominant electron scattering mechanisms in polycrystalline sputtered ZTNO and help position this material for future use in optoelectronic devices.

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [3];  [2]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Nanosys Inc., Milpitas, CA (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States); Empa—Swiss Federal Laboratories for Materials Science and Technology, Dübendorf (Switzerland)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1544539
Report Number(s):
NREL/JA-5K00-73047
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 126; Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductors; electronic transport; sputter deposition; optoelectronic devices; thin films; nitrides; hall effect; electron scattering; photovoltaics; light emitting diode materials

Citation Formats

Hamilton, Dylan C., Arca, Elisabetta, Pan, Jie, Siol, Sebastian, Macomber, Aaron, Young, Matthew, Lany, Stephan, and Zakutayev, Andriy. Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films. United States: N. p., 2019. Web. doi:10.1063/1.5087408.
Hamilton, Dylan C., Arca, Elisabetta, Pan, Jie, Siol, Sebastian, Macomber, Aaron, Young, Matthew, Lany, Stephan, & Zakutayev, Andriy. Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films. United States. doi:10.1063/1.5087408.
Hamilton, Dylan C., Arca, Elisabetta, Pan, Jie, Siol, Sebastian, Macomber, Aaron, Young, Matthew, Lany, Stephan, and Zakutayev, Andriy. Tue . "Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films". United States. doi:10.1063/1.5087408. https://www.osti.gov/servlets/purl/1544539.
@article{osti_1544539,
title = {Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films},
author = {Hamilton, Dylan C. and Arca, Elisabetta and Pan, Jie and Siol, Sebastian and Macomber, Aaron and Young, Matthew and Lany, Stephan and Zakutayev, Andriy},
abstractNote = {Zinc tin nitride (ZnSnN2) is an emerging ternary nitride semiconductor studied for applications in solar cells, light-emitting diodes, and other optoelectronic devices. For all of these applications, the charge carrier mobility is an important property. Yet, the dominant electron scattering mechanisms in ZnSnN2 are unclear, especially in the presence of oxygen that is often incorporated during thin film sputter deposition of this material. Moreover, there are no experimental reports on the concentration of defects in such polycrystalline sputtered zinc tin oxynitride Zn1+xSn1-xN2-2xO2x (ZTNO) thin films. Here, we address both of these questions using temperature-dependent Hall effect measurements of sputtered ZTNO thin films as a function of Zn composition and O content. The measured temperature dependence of the mobility is fitted to scattering on ionized and neutral defects and to grain boundary scattering. The results suggest that ZTNO is a heavily compensated semiconductor, with a high density of neutral defects dominating the electron scattering processes. First principles theoretical calculations indicate that these neutral defects are likely to originate from the abundant ZnSn-2ON complexes in the ZTNO material. Overall, these results establish the dominant electron scattering mechanisms in polycrystalline sputtered ZTNO and help position this material for future use in optoelectronic devices.},
doi = {10.1063/1.5087408},
journal = {Journal of Applied Physics},
number = 3,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}

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