Evidence for a quantum spin Hall phase in graphene decorated with Bi2Te3 nanoparticles

Hatsuda, K.; Mine, H.; Nakamura, T.; Li, J.; Wu, R.; Katsumoto, S.; Haruyama, J.

doi:10.1126/sciadv.aau6915

Title: Evidence for a quantum spin Hall phase in graphene decorated with Bi₂Te₃ nanoparticles

Journal Article · 08 November 2018 · Science Advances

DOI: https://doi.org/10.1126/sciadv.aau6915 · OSTI ID:1544001

^[1]; Mine, H. ^[1]; Nakamura, T. ^[2]; Li, J. ^[3];

^[3]; Katsumoto, S. ^[2];

^[4]

Aoyama Gakuin Univ., Kanagawa (Japan)
The Univ. of Tokyo, Chiba (Japan)
Univ. of California, Irvine, CA (United States)
Aoyama Gakuin Univ., Kanagawa (Japan); The Univ. of Tokyo, Chiba (Japan)

Realization of the quantum spin Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene’s exceptionally weak spin-orbit coupling—stemming from carbon’s low mass—poses the primary obstacle. We experimentally and theoretically study artificially enhanced spin-orbit coupling in graphene via random decoration with dilute Bi₂Te₃ nanoparticles. Multiterminal resistance measurements suggest the presence of helical edge states characteristic of a quantum spin Hall phase; the magnetic field and temperature dependence of the resistance peaks, x-ray photoelectron spectra, scanning tunneling spectroscopy, and first-principles calculations further support this scenario. These observations highlight a pathway to spintronics and quantum information applications in graphene-based quantum spin Hall platforms.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Irvine, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-05ER46237

OSTI ID:: 1544001

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 11 Vol. 4; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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