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Title: Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations

Abstract

We investigate the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Thus, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Moreover, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN light-emitting diodes.

Authors:
ORCiD logo [1];  [1];  [2]; ORCiD logo [1];  [1]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Temple Univ., Philadelphia, PA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
1543843
Alternate Identifier(s):
OSTI ID: 1389106
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 11; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States: N. p., 2017. Web. doi:10.1063/1.5002104.
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, & Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States. doi:10.1063/1.5002104.
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Mon . "Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations". United States. doi:10.1063/1.5002104. https://www.osti.gov/servlets/purl/1543843.
@article{osti_1543843,
title = {Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations},
author = {Jones, Christina M. and Teng, Chu-Hsiang and Yan, Qimin and Ku, Pei-Cheng and Kioupakis, Emmanouil},
abstractNote = {We investigate the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Thus, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Moreover, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN light-emitting diodes.},
doi = {10.1063/1.5002104},
journal = {Applied Physics Letters},
number = 11,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}

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Cited by: 11 works
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