Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations
Abstract
We investigate the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Thus, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Moreover, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN light-emitting diodes.
- Authors:
-
[1];
[1];
- Univ. of Michigan, Ann Arbor, MI (United States)
- Temple Univ., Philadelphia, PA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- OSTI Identifier:
- 1543843
- Alternate Identifier(s):
- OSTI ID: 1389106
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 11; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States: N. p., 2017.
Web. doi:10.1063/1.5002104.
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, & Kioupakis, Emmanouil. Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations. United States. https://doi.org/10.1063/1.5002104
Jones, Christina M., Teng, Chu-Hsiang, Yan, Qimin, Ku, Pei-Cheng, and Kioupakis, Emmanouil. Mon .
"Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations". United States. https://doi.org/10.1063/1.5002104. https://www.osti.gov/servlets/purl/1543843.
@article{osti_1543843,
title = {Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations},
author = {Jones, Christina M. and Teng, Chu-Hsiang and Yan, Qimin and Ku, Pei-Cheng and Kioupakis, Emmanouil},
abstractNote = {We investigate the effect of carrier localization due to random alloy fluctuations on the radiative and Auger recombination rates in InGaN quantum wells as a function of alloy composition, crystal orientation, carrier density, and temperature. Our results show that alloy fluctuations reduce individual transition matrix elements by the separate localization of electrons and holes, but this effect is overcompensated by the additional transitions enabled by translational symmetry breaking and the resulting lack of momentum conservation. Thus, we find that localization increases both radiative and Auger recombination rates, but that Auger recombination rates increase by one order of magnitude more than radiative rates. Moreover, we demonstrate that localization has an overall detrimental effect on the efficiency-droop and green-gap problems of InGaN light-emitting diodes.},
doi = {10.1063/1.5002104},
journal = {Applied Physics Letters},
number = 11,
volume = 111,
place = {United States},
year = {Mon Sep 11 00:00:00 EDT 2017},
month = {Mon Sep 11 00:00:00 EDT 2017}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 49 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
journal, October 2016
- Nippert, Felix; Karpov, Sergey Yu.; Callsen, Gordon
- Applied Physics Letters, Vol. 109, Issue 16
Atom probe tomography assessment of the impact of electron beam exposure on In x Ga 1−x N/GaN quantum wells
journal, July 2011
- Bennett, Samantha E.; Saxey, David W.; Kappers, Menno J.
- Applied Physics Letters, Vol. 99, Issue 2
Carrier localization in InGaN by composition fluctuations: implication to the “green gap”
journal, January 2017
- Karpov, Sergey Yu.
- Photonics Research, Vol. 5, Issue 2
Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
journal, February 2014
- Li, Zhi; Kang, Junjie; Wei Wang, Bo
- Journal of Applied Physics, Vol. 115, Issue 8
Efficiency droop in nitride-based light-emitting diodes
journal, July 2010
- Piprek, Joachim
- physica status solidi (a), Vol. 207, Issue 10, p. 2217-2225
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
journal, January 2015
- Schulz, Stefan; Caro, Miguel A.; Coughlan, Conor
- Physical Review B, Vol. 91, Issue 3
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
journal, September 2014
- Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.
- Journal of Applied Physics, Vol. 116, Issue 11
Carrier localization and the origin of luminescence in cubic InGaN alloys
journal, September 2001
- Kent, P. R. C.; Zunger, Alex
- Applied Physics Letters, Vol. 79, Issue 13
nextnano: General Purpose 3-D Simulations
journal, September 2007
- Birner, S.; Zibold, T.; Andlauer, T.
- IEEE Transactions on Electron Devices, Vol. 54, Issue 9
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices
journal, December 2013
- Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel
- New Journal of Physics, Vol. 15, Issue 12
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
journal, February 1996
- Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
- Japanese Journal of Applied Physics, Vol. 35, Issue Part 2, No. 2B
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
journal, April 2011
- Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T.
- Applied Physics Letters, Vol. 98, Issue 16
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994
- Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
- Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
Auger recombination in InGaN measured by photoluminescence
journal, October 2007
- Shen, Y. C.; Mueller, G. O.; Watanabe, S.
- Applied Physics Letters, Vol. 91, Issue 14
Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?
journal, January 2016
- Su, Z. C.; Ning, J. Q.; Deng, Z.
- Nanoscale, Vol. 8, Issue 13
Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures
journal, December 2016
- Bayerl, Dylan; Islam, Sm; Jones, Christina M.
- Applied Physics Letters, Vol. 109, Issue 24
High-temperature Mott transition in wide-band-gap semiconductor quantum wells
journal, November 2014
- Rossbach, G.; Levrat, J.; Jacopin, G.
- Physical Review B, Vol. 90, Issue 20
Auger recombination in semiconductor quantum wells
journal, August 1998
- Polkovnikov, Anatoli S.; Zegrya, Georgy G.
- Physical Review B, Vol. 58, Issue 7
Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
journal, July 2008
- Galtrey, M. J.; Oliver, R. A.; Kappers, M. J.
- Journal of Applied Physics, Vol. 104, Issue 1
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
journal, March 2017
- Shahmohammadi, M.; Liu, W.; Rossbach, G.
- Physical Review B, Vol. 95, Issue 12
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
journal, December 2012
- Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G.
- Applied Physics Letters, Vol. 101, Issue 23
Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires
journal, March 2014
- Bayerl, Dylan; Kioupakis, Emmanouil
- Nano Letters, Vol. 14, Issue 7
First-principles calculations of indirect Auger recombination in nitride semiconductors
journal, July 2015
- Kioupakis, Emmanouil; Steiauf, Daniel; Rinke, Patrick
- Physical Review B, Vol. 92, Issue 3
Efficiency Drop in Green Light Emitting Diodes: The Role of Random Alloy Fluctuations
journal, January 2016
- Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele
- Physical Review Letters, Vol. 116, Issue 2
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
journal, August 2012
- Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung
- Applied Physics Letters, Vol. 101, Issue 8
Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures
journal, January 2016
- Nirschl, Anna; Binder, Michael; Schmid, Marina
- Optics Express, Vol. 24, Issue 3
Carrier localization mechanisms in In Ga N/GaN quantum wells
journal, March 2011
- Watson-Parris, D.; Godfrey, M. J.; Dawson, P.
- Physical Review B, Vol. 83, Issue 11
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
journal, December 2007
- Gardner, N. F.; Müller, G. O.; Shen, Y. C.
- Applied Physics Letters, Vol. 91, Issue 24
Internal quantum efficiency and carrier dynamics in semipolar (20<span style="text-decoration: overline">21</span>) InGaN/GaN light-emitting diodes
journal, January 2017
- Okur, Serdal; Nami, Mohsen; Rishinaramangalam, Ashwin K.
- Optics Express, Vol. 25, Issue 3
High-Power and High-Efficiency InGaN-Based Light Emitters
journal, January 2010
- Laubsch, Ansgar; Sabathil, Matthias; Baur, Johannes
- IEEE Transactions on Electron Devices, Vol. 57, Issue 1
Solid-state lighting: lamps, chips, and materials for tomorrow
journal, May 2004
- Tsao, J. Y.
- IEEE Circuits and Devices Magazine, Vol. 20, Issue 3, p. 28-37
Towards quantification of the crucial Impact of auger recombination for the Efficiency droop in (AlInGa)N Quantum well structures
text, January 2016
- Nirschl, Anna; Binder, Michael; Schmid, Marina
- Universität Regensburg
Auger Recombination in Semiconductor Quantum Wells
text, January 1998
- Polkovnikov, Anatoli S.; Zegrya, Georgy G.
- arXiv
Works referencing / citing this record:
Radiative and Auger Recombination Constants and Internal Quantum Efficiency of (0001) AlGaN Deep‐UV Light‐Emitting Diode Structures
journal, December 2019
- Rudinsky, Mikhail E.; Karpov, Sergey Yu.
- physica status solidi (a), Vol. 217, Issue 14
Role of hole confinement in the recombination properties of InGaN quantum structures
journal, June 2019
- Anikeeva, M.; Albrecht, M.; Mahler, F.
- Scientific Reports, Vol. 9, Issue 1
Radiative and Auger recombination processes in indium nitride
journal, June 2018
- McAllister, Andrew; Bayerl, Dylan; Kioupakis, Emmanouil
- Applied Physics Letters, Vol. 112, Issue 25
Deep trap analysis in green light emitting diodes: Problems and solutions
journal, June 2019
- Polyakov, A. Y.; Shmidt, N. M.; Smirnov, N. B.
- Journal of Applied Physics, Vol. 125, Issue 21
Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations
journal, November 2019
- David, Aurelien; Young, Nathan G.; Lund, Cory
- Applied Physics Letters, Vol. 115, Issue 19
Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN
journal, January 2020
- Kravcov, O.; Mickevičius, J.; Tamulaitis, G.
- Journal of Physics: Condensed Matter, Vol. 32, Issue 14
Interface Roughness, Carrier Localization, and Wave Function Overlap in -Plane Quantum Wells: Interplay of Well Width, Alloy Microstructure, Structural Inhomogeneities, and Coulomb Effects
journal, September 2018
- Tanner, Daniel S. P.; McMahon, Joshua M.; Schulz, Stefan
- Physical Review Applied, Vol. 10, Issue 3
Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap
journal, March 2019
- David, Aurelien; Young, Nathan G.; Hurni, Christophe A.
- Physical Review Applied, Vol. 11, Issue 3
Impact of Compositional Nonuniformity in -Based Light-Emitting Diodes
journal, July 2019
- Di Vito, A.; Pecchia, A.; Di Carlo, A.
- Physical Review Applied, Vol. 12, Issue 1
Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods
journal, December 2019
- Liu, W.; Rossbach, G.; Avramescu, A.
- Physical Review B, Vol. 100, Issue 23
Quantum Barrier Growth Temperature Affects Deep Traps Spectra of InGaN Blue Light Emitting Diodes
journal, January 2018
- Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
- ECS Journal of Solid State Science and Technology, Vol. 7, Issue 5
Review—Recent Advances and Challenges in Indium Gallium Nitride (In x Ga 1-x N) Materials for Solid State Lighting
journal, November 2019
- Kour, Ravinder; Arya, Sandeep; Verma, Sonali
- ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1
Review—The Physics of Recombinations in III-Nitride Emitters
journal, January 2020
- David, Aurelien; Young, Nathan G.; Lund, Cory
- ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1
Review—On The Search for Efficient Solid State Light Emitters: Past, Present, Future
journal, January 2020
- Weisbuch, Claude
- ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1
Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
journal, March 2019
- Xing, Yao; Zhao, Degang; Jiang, Desheng
- Nanoscale Research Letters, Vol. 14, Issue 1
Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap”
journal, May 2018
- Karpov, Sergey
- Applied Sciences, Vol. 8, Issue 5
Effect of Die Shape and Size on Performance of III-Nitride Micro-LEDs: A Modeling Study
journal, October 2018
- Bulashevich, Kirill; Konoplev, Sergey; Karpov, Sergey
- Photonics, Vol. 5, Issue 4
Role of hole confinement in the recombination properties of InGaN quantum structures
journal, June 2019
- Anikeeva, M.; Albrecht, M.; Mahler, F.
- Scientific Reports, Vol. 9, Issue 1
Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
journal, March 2019
- Xing, Yao; Zhao, Degang; Jiang, Desheng
- Nanoscale Research Letters, Vol. 14, Issue 1