DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hybrid functional study of native point defects and impurities in ZnGeN2

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/1.4999790 · OSTI ID:1543842

Using hybrid density functional theory, we explore the properties of native point defects and hydrogen and oxygen impurities in ZnGeN2, a wide-band-gap semiconductor that is promising for applications in electronic and optoelectronic devices. We find that cation antisites have the lowest formation energies amongst all of the native point defects for a wide range of chemical potential conditions. Yet, native point defects must not act as sources of doping. Unintentional n-type conductivity in ZnGeN2 must be attributed to impurities: substitutional oxygen on a nitrogen site and interstitial hydrogen act as donors.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); Army Research Office (ARO)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1543842
Alternate ID(s):
OSTI ID: 1420664
Journal Information:
Journal of Applied Physics, Vol. 122, Issue 19; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 20 works
Citation information provided by
Web of Science

References (33)

Hubbard-corrected DFT energy functionals: The LDA+U description of correlated systems journal July 2013
Hydrogen multicentre bonds journal December 2006
LDA + U and hybrid functional calculations for defects in ZnO, SnO2, and TiO2 journal December 2010
Disorder effects on the band structure of ZnGeN 2 : Role of exchange defects journal November 2016
Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy journal January 2004
AlGaN/GaN HEMTs-an overview of device operation and applications journal June 2002
Projector augmented-wave method journal December 1994
Study of intersubband transitions in GaN-ZnGeN 2 coupled quantum wells journal March 2017
Hybrid functionals based on a screened Coulomb potential journal May 2003
Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties journal May 2001
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal July 1996
ZnGeN 2 and ZnGeN 2 :Mn 2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties journal January 2015
Electrostatic interactions between charged defects in supercells journal December 2010
Electron and chemical reservoir corrections for point-defect formation energies journal April 2016
Fully Ab Initio Finite-Size Corrections for Charged-Defect Supercell Calculations journal January 2009
Groupe spatial et ordre des atomes de zinc et de germanium dans ZnGeN2 journal September 1973
First-principles calculations for point defects in solids journal March 2014
Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials journal January 2017
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination journal October 2013
Semiconducting ZnSn x Ge 1−x N 2 alloys prepared by reactive radio-frequency sputtering journal July 2015
RF-sputter deposition of Zn–Ge nitride thin films journal October 1999
Computationally predicted energies and properties of defects in GaN journal March 2017
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal June 2006
Ab initiomolecular dynamics for liquid metals journal January 1993
Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources journal March 2008
Sources of unintentional conductivity in InN journal January 2008
Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule journal May 2015
Native point defects and doping in ZnGeN 2 journal April 2016
Seebeck Coefficient Measurements on Micron-Size Single-Crystal Zinc Germanium Nitride Rods journal January 2016
Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN 2 journal January 1999
High-resolution X-ray luminescence extension imaging journal February 2021
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect journal February 2020
Hubbard-corrected DFT energy functionals: the LDA+U description of correlated systems text January 2013

Cited By (5)

Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth journal December 2019
Strategies for p -type doping of ZnGeN 2 journal January 2019
Optimizing n -type doping of ZnGeN 2 and ZnSiN 2 journal October 2019
Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N 2 Semiconductors journal February 2019
First-principles calculations of phonon derived Raman and infrared spectra in Be-IV-N 2 compounds journal July 2019