Hybrid functional study of native point defects and impurities in ZnGeN2
Journal Article
·
· Journal of Applied Physics
- Univ. of California, Santa Barbara, CA (United States)
Using hybrid density functional theory, we explore the properties of native point defects and hydrogen and oxygen impurities in ZnGeN2, a wide-band-gap semiconductor that is promising for applications in electronic and optoelectronic devices. We find that cation antisites have the lowest formation energies amongst all of the native point defects for a wide range of chemical potential conditions. Yet, native point defects must not act as sources of doping. Unintentional n-type conductivity in ZnGeN2 must be attributed to impurities: substitutional oxygen on a nitrogen site and interstitial hydrogen act as donors.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); Army Research Office (ARO)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1543842
- Alternate ID(s):
- OSTI ID: 1420664
- Journal Information:
- Journal of Applied Physics, Vol. 122, Issue 19; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 20 works
Citation information provided by
Web of Science
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