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Title: Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

Abstract

Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO 3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. As a result, it is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1];  [1]
  1. The Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1543836
Alternate Identifier(s):
OSTI ID: 1367362
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Physics

Citation Formats

Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., and Chen, Long -Qing. Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection. United States: N. p., 2017. Web. doi:10.1063/1.4990677.
Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., & Chen, Long -Qing. Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection. United States. doi:10.1063/1.4990677.
Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., and Chen, Long -Qing. Thu . "Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection". United States. doi:10.1063/1.4990677. https://www.osti.gov/servlets/purl/1543836.
@article{osti_1543836,
title = {Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection},
author = {Wang, Jian -Jun and Bayer, Thorsten J. M. and Wang, Rui and Carter, Jared J. and Randall, Clive A. and Chen, Long -Qing},
abstractNote = {Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. As a result, it is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.},
doi = {10.1063/1.4990677},
journal = {Applied Physics Letters},
number = 26,
volume = 110,
place = {United States},
year = {2017},
month = {6}
}

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