Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures
Abstract
Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. The lifetimes and mean free paths of energetic carriers have been investigated in free-standing graphene, graphite, and a heterostructure consisting of alternating graphene and hexagonal boron nitride layers using ab initio calculations of electron–electron and electron–phonon scattering in these materials. It is found that the extremely high lifetimes (3 ps) of low-energy carriers near the Dirac point in graphene, which are a 100 times larger than that in noble metals, are reduced by an order of magnitude due to interlayer coupling in graphite, but enhanced in the heterostructure due to phonon mode clamping. However, these lifetimes drop precipitously with increasing carrier energy and are smaller than those in noble metals at energies exceeding 0.5 eV. By analyzing the contribution of different scattering mechanisms and interlayer interactions, desirable spacer layer characteristics—high dielectric constant and heavy atoms—that could pave the way for plasmonic heterostructures with improved hot carrier transport have been identified.
- Authors:
-
- Harvard Univ., Cambridge, MA (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- OSTI Identifier:
- 1543462
- Alternate Identifier(s):
- OSTI ID: 1401286
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Optical Materials
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 15; Journal ID: ISSN 2195-1071
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials Science; Optics
Citation Formats
Narang, Prineha, Zhao, Litao, Claybrook, Steven, and Sundararaman, Ravishankar. Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures. United States: N. p., 2017.
Web. doi:10.1002/adom.201600914.
Narang, Prineha, Zhao, Litao, Claybrook, Steven, & Sundararaman, Ravishankar. Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures. United States. https://doi.org/10.1002/adom.201600914
Narang, Prineha, Zhao, Litao, Claybrook, Steven, and Sundararaman, Ravishankar. Fri .
"Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures". United States. https://doi.org/10.1002/adom.201600914. https://www.osti.gov/servlets/purl/1543462.
@article{osti_1543462,
title = {Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures},
author = {Narang, Prineha and Zhao, Litao and Claybrook, Steven and Sundararaman, Ravishankar},
abstractNote = {Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. The lifetimes and mean free paths of energetic carriers have been investigated in free-standing graphene, graphite, and a heterostructure consisting of alternating graphene and hexagonal boron nitride layers using ab initio calculations of electron–electron and electron–phonon scattering in these materials. It is found that the extremely high lifetimes (3 ps) of low-energy carriers near the Dirac point in graphene, which are a 100 times larger than that in noble metals, are reduced by an order of magnitude due to interlayer coupling in graphite, but enhanced in the heterostructure due to phonon mode clamping. However, these lifetimes drop precipitously with increasing carrier energy and are smaller than those in noble metals at energies exceeding 0.5 eV. By analyzing the contribution of different scattering mechanisms and interlayer interactions, desirable spacer layer characteristics—high dielectric constant and heavy atoms—that could pave the way for plasmonic heterostructures with improved hot carrier transport have been identified.},
doi = {10.1002/adom.201600914},
journal = {Advanced Optical Materials},
number = 15,
volume = 5,
place = {United States},
year = {Fri Mar 24 00:00:00 EDT 2017},
month = {Fri Mar 24 00:00:00 EDT 2017}
}
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Figures / Tables:
FIG. 1: (a) Schematic structures of 2D materials and graphene-derived vdW heterostructures in which we investigate hot carrier relaxation dynamics. (b) Feynman diagrams for the intrinsic carrier relaxation mechanisms: electronphonon (e-ph) scattering and and electron-electron (e-e) scattering. (c) Roles of the two mechanisms in energy and momentum relaxation: both processesmore »
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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.