Control of dopant crystallinity in electrochemically treated cuprate thin films

Frano, A.; Bluschke, M.; Xu, Z.; Frandsen, B.; Lu, Y.; Yi, M.; Marks, R.; Mehta, A.; Borzenets, V.; Meyers, D.; Dean, M. P.  M.; Baiutti, F.; Maier, J.; Kim, G.; Christiani, G.; Logvenov, G.; Benckiser, E.; Keimer, B.; Birgeneau, R. J.

doi:10.1103/PhysRevMaterials.3.063803

Title: Control of dopant crystallinity in electrochemically treated cuprate thin films

Journal Article · 27 June 2019 · Physical Review Materials

DOI: https://doi.org/10.1103/PhysRevMaterials.3.063803 · OSTI ID:1543398

Frano, A. ^[1]; Bluschke, M. ^[2]; Xu, Z. ^[3]; Frandsen, B. ^[3]; Lu, Y. ^[4]; Yi, M. ^[3]; Marks, R. ^[5]; Mehta, A. ^[5]; Borzenets, V. ^[5]; Meyers, D. ^[6]; Dean, M. P. M. ^[6]; Baiutti, F. ^[4]; Maier, J. ^[4]; Kim, G. ^[4]; Christiani, G. ^[4]; Logvenov, G. ^[4]; Benckiser, E. ^[4]; Keimer, B. ^[4]; Birgeneau, R. J. ^[3]

Univ. of California, San Diego, CA (United States). Dept. of Physics; Univ. of California, Berkeley, CA (United States). Dept. of Physics
Max Planck Inst. for Solid State Research, Stuttgart (Germany); Helmholtz-Zentrum Berlin für Materialien und Energie (HZB), (Germany). Wilhelm-Conrad-Röntgen-Campus BESSY II
Univ. of California, Berkeley, CA (United States). Dept. of Physics
Max Planck Inst. for Solid State Research, Stuttgart (Germany)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.

We present a methodology based on ex situ (postgrowth) electrochemistry to control the oxygen concentration in thin films of the superconducting oxide La₂CuO_4+y grown epitaxially on substrates of isostructural LaSrAlO₄. The superconducting transition temperature, which depends on the oxygen concentration, can be tuned by adjusting the pH level of the base solution used for the electrochemical reaction. As our main finding, we demonstrate that the dopant oxygens can either occupy the interstitial layer in an orientationally disordered state or organize into a crystalline phase via a mechanism in which dopant oxygens are inserted into the substrate, changing the lattice symmetry of both the substrate and the epitaxial film. Finally, we discuss this mechanism, and we describe the resulting methodology as a platform to be explored in thin films of other transition-metal oxides.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0012704

OSTI ID:: 1543398

Report Number(s):: BNL--211824-2019-JAAM

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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