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Title: Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb

Abstract

The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons-their orbital nature-is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [3];  [4]; ORCiD logo [1];  [3];  [5];  [5]; ORCiD logo [3]; ORCiD logo [4];  [6];  [3];  [3];  [7];  [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Northern Illinois Univ., DeKalb, IL (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Maryland, College Park, MD (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States); Nanjing Univ., Nanjing (China)
  6. Oakland Univ., Rochester, MI (United States)
  7. Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); National Natural Science Foundation of China (NNSFC); National Key Research and Development Program of China
OSTI Identifier:
1543287
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Xu, Jing, Wu, Fengcheng, Bao, Jin -Ke, Han, Fei, Xiao, Zhi -Li, Martin, Ivar, Lyu, Yang -Yang, Wang, Yong -Lei, Chung, Duck Young, Li, Mingda, Zhang, Wei, Pearson, John E., Jiang, Jidong S., Kanatzidis, Mercouri G., and Kwok, Wai -Kwong. Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb. United States: N. p., 2019. Web. doi:10.1038/s41467-019-10624-z.
Xu, Jing, Wu, Fengcheng, Bao, Jin -Ke, Han, Fei, Xiao, Zhi -Li, Martin, Ivar, Lyu, Yang -Yang, Wang, Yong -Lei, Chung, Duck Young, Li, Mingda, Zhang, Wei, Pearson, John E., Jiang, Jidong S., Kanatzidis, Mercouri G., & Kwok, Wai -Kwong. Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb. United States. doi:10.1038/s41467-019-10624-z.
Xu, Jing, Wu, Fengcheng, Bao, Jin -Ke, Han, Fei, Xiao, Zhi -Li, Martin, Ivar, Lyu, Yang -Yang, Wang, Yong -Lei, Chung, Duck Young, Li, Mingda, Zhang, Wei, Pearson, John E., Jiang, Jidong S., Kanatzidis, Mercouri G., and Kwok, Wai -Kwong. Fri . "Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb". United States. doi:10.1038/s41467-019-10624-z. https://www.osti.gov/servlets/purl/1543287.
@article{osti_1543287,
title = {Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb},
author = {Xu, Jing and Wu, Fengcheng and Bao, Jin -Ke and Han, Fei and Xiao, Zhi -Li and Martin, Ivar and Lyu, Yang -Yang and Wang, Yong -Lei and Chung, Duck Young and Li, Mingda and Zhang, Wei and Pearson, John E. and Jiang, Jidong S. and Kanatzidis, Mercouri G. and Kwok, Wai -Kwong},
abstractNote = {The charge and spin of the electrons in solids have been extensively exploited in electronic devices and in the development of spintronics. Another attribute of electrons-their orbital nature-is attracting growing interest for understanding exotic phenomena and in creating the next-generation of quantum devices such as orbital qubits. Here, we report on orbital-flop induced magnetoresistance anisotropy in CeSb. In the low temperature high magnetic-field driven ferromagnetic state, a series of additional minima appear in the angle-dependent magnetoresistance. These minima arise from the anisotropic magnetization originating from orbital-flops and from the enhanced electron scattering from magnetic multidomains formed around the first-order orbital-flop transition. The measured magnetization anisotropy can be accounted for with a phenomenological model involving orbital-flops and a spin-valve-like structure is used to demonstrate the viable utilization of orbital-flop phenomenon. Our results showcase a contribution of orbital behavior in the emergence of intriguing phenomena.},
doi = {10.1038/s41467-019-10624-z},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {6}
}

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Figures / Tables:

Fig. 2 Fig. 2: Anisotropy of the ferromagnetic transition. a, R(Η) curves of Sample A at T = 3 K and θ = 90°, 135° and 180°. HFM is the magnetic field above which the system is in the ferromagnetic state. HFM* indicates a possible phase transition. HCR is the magnetic fieldmore » above which the magnetoresistance at H ∥ [011] is smaller than that at H ∥ [010] and H ∥ [00$\bar{1}$]. b, Angle dependence of HFM (solid symbols) and HFM* (open symbols). The dashed lines represent 1/cosφ with φ = θ - n$π$/2 with n = 1, 2, and 3 for 90° ≤ θ ≤ 135° and 135° ≤ θ ≤ 225°, and 225° ≤ θ ≤ 270°, respectively (see text for more discussion). c, Phase diagrams HFM versus T for the ferromagnetic states at H ∥ [010] and H ∥ [011] and for HCR, above which orbital-flops appear as clear magnetoresistance minima in the R(θ) curves. Results indicate that orbital-flop effect is most pronounced in the ferromagnetic phase. d, Magnetoresistances at μ0H = 7 T and temperatures from 3 K to 25 K. Orbital-flop induced minima can be seen at θ = 45°, 135°, 225° and 315°, i.e., H ∥ <011> at T < 10 K.« less

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