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Title: Mixture domain states in PbTiO 3 film with potentials for functional application

Abstract

We investigated the microstructure of PbTiO 3 films epitaxially grown on DyScO 3 (110) substrates using synchrotron-based 3D reciprocal space mapping and X-ray reflection interface microscopy. The results show that an in-plane anisotropic mixture domain state ( a* + a/c) exists in the PbTiO 3 films, where a* domains reside between a/c twin stripe domains. Furthermore, when compared with traditional a domains in a/c twins, the a* domain is found to possess a similar in-plane lattice parameter but a much smaller out-of-plane lattice (~0.5%). Here, we also discovered a temperature-driven transition between a* and a/c pointing to potential applications in functional devices due to the huge mechanical response (4.85%) and polarization rotation between the a* and c domains.

Authors:
 [1]; ORCiD logo [2];  [1];  [1]; ORCiD logo [2];  [1]
  1. Univ. of Science and Technology of China, Hefei (China)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Natural Science Foundation of China (NNSFC); National Key Research and Development Program of China
OSTI Identifier:
1543284
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, Han, Zhang, Zhan, Dong, Yongqi, Zeng, Changgan, Fong, Dillon D., and Luo, Zhenlin. Mixture domain states in PbTiO3 film with potentials for functional application. United States: N. p., 2019. Web. doi:10.1063/1.5093798.
Xu, Han, Zhang, Zhan, Dong, Yongqi, Zeng, Changgan, Fong, Dillon D., & Luo, Zhenlin. Mixture domain states in PbTiO3 film with potentials for functional application. United States. doi:10.1063/1.5093798.
Xu, Han, Zhang, Zhan, Dong, Yongqi, Zeng, Changgan, Fong, Dillon D., and Luo, Zhenlin. Mon . "Mixture domain states in PbTiO3 film with potentials for functional application". United States. doi:10.1063/1.5093798.
@article{osti_1543284,
title = {Mixture domain states in PbTiO3 film with potentials for functional application},
author = {Xu, Han and Zhang, Zhan and Dong, Yongqi and Zeng, Changgan and Fong, Dillon D. and Luo, Zhenlin},
abstractNote = {We investigated the microstructure of PbTiO3 films epitaxially grown on DyScO3 (110) substrates using synchrotron-based 3D reciprocal space mapping and X-ray reflection interface microscopy. The results show that an in-plane anisotropic mixture domain state (a* + a/c) exists in the PbTiO3 films, where a* domains reside between a/c twin stripe domains. Furthermore, when compared with traditional a domains in a/c twins, the a* domain is found to possess a similar in-plane lattice parameter but a much smaller out-of-plane lattice (~0.5%). Here, we also discovered a temperature-driven transition between a* and a/c pointing to potential applications in functional devices due to the huge mechanical response (4.85%) and polarization rotation between the a* and c domains.},
doi = {10.1063/1.5093798},
journal = {Applied Physics Letters},
number = 24,
volume = 114,
place = {United States},
year = {2019},
month = {6}
}

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