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Nonlinear Planar Hall Effect
Abstract
An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $$\mathrm{Bi_2Se_3}$$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $$\pi/2$$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $$\pi/4$$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
- Authors:
-
- National Univ. of Singapore (Singapore). Dept. of Electrical and Computer Engineering, and National Univ. of Singapore Nanoscience & Nanotechnology Initiative (NUSNNI)
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- OSTI Identifier:
- 1543281
- Alternate Identifier(s):
- OSTI ID: 1546420
- Grant/Contract Number:
- [AC02-06CH11357; R-263-000-D61-114; A18A6b0057]
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- [ Journal Volume: 123; Journal Issue: 1]; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States: N. p., 2019.
Web. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, & Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Mon .
"Nonlinear Planar Hall Effect". United States. doi:10.1103/PhysRevLett.123.016801.
@article{osti_1543281,
title = {Nonlinear Planar Hall Effect},
author = {He, Pan and Zhang, Steven S. -L. and Zhu, Dapeng and Shi, Shuyuan and Heinonen, Olle G. and Vignale, Giovanni and Yang, Hyunsoo},
abstractNote = {An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $\mathrm{Bi_2Se_3}$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $\pi/2$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $\pi/4$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.},
doi = {10.1103/PhysRevLett.123.016801},
journal = {Physical Review Letters},
number = [1],
volume = [123],
place = {United States},
year = {2019},
month = {7}
}
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