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Title: Nonlinear Planar Hall Effect

Abstract

An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $$\mathrm{Bi_2Se_3}$$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $$\pi/2$$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $$\pi/4$$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

Authors:
 [1];  [2];  [1];  [1];  [3];  [4];  [1]
  1. National Univ. of Singapore (Singapore). Dept. of Electrical and Computer Engineering, and National Univ. of Singapore Nanoscience & Nanotechnology Initiative (NUSNNI)
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  4. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1543281
Alternate Identifier(s):
OSTI ID: 1546420
Grant/Contract Number:  
[AC02-06CH11357; R-263-000-D61-114; A18A6b0057]
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
[ Journal Volume: 123; Journal Issue: 1]; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States: N. p., 2019. Web. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, & Yang, Hyunsoo. Nonlinear Planar Hall Effect. United States. doi:10.1103/PhysRevLett.123.016801.
He, Pan, Zhang, Steven S. -L., Zhu, Dapeng, Shi, Shuyuan, Heinonen, Olle G., Vignale, Giovanni, and Yang, Hyunsoo. Mon . "Nonlinear Planar Hall Effect". United States. doi:10.1103/PhysRevLett.123.016801.
@article{osti_1543281,
title = {Nonlinear Planar Hall Effect},
author = {He, Pan and Zhang, Steven S. -L. and Zhu, Dapeng and Shi, Shuyuan and Heinonen, Olle G. and Vignale, Giovanni and Yang, Hyunsoo},
abstractNote = {An intriguing property of a three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. In this work, we report the observation of a new type of Hall effect in a 3D TI $\mathrm{Bi_2Se_3}$ film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a $\pi/2$ angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of $\pi/4$ between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time-reversal symmetry breaking, which also exists in a wide class of noncentrosymmetric materials with a large span of magnitude. Finally, it provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.},
doi = {10.1103/PhysRevLett.123.016801},
journal = {Physical Review Letters},
number = [1],
volume = [123],
place = {United States},
year = {2019},
month = {7}
}

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