Large metastability in Cu (In,Ga)Se2 devices: The importance of buffer properties
Abstract
Some commercial Cu (In,Ga)Se2 (CIGS) modules reveal large changes in current-voltage parameters with light soaking. While such changes are not necessarily indicative of a performance problem, the associated uncertainty may be disadvantageous in a highly competitive market. Thus, it is beneficial to understand the origin of large metastabilities in order to define what processing changes might diminish metastability without impacting other desirable aspects of high-performance devices. This report attempts to reproduce large metastabilities like those in some commercial products both through absorber and buffer processing variations in small devices. While variations of both types were found to affect metastability, only buffer variations could reproduce large metastability in high-efficiency devices. Device modeling validates that buffer effects alone are sufficient to explain the large metastability seen in these devices.
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1543253
- Alternate Identifier(s):
- OSTI ID: 1529678
- Report Number(s):
- NREL/JA-5K00-72573
Journal ID: ISSN 1062-7995; MainId:19747;UUID:9e2edfaa-f4c8-e811-9c19-ac162d87dfe5;MainAdminID:8224
- Grant/Contract Number:
- AC36-08GO28308; AC36‐08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Progress in Photovoltaics
- Additional Journal Information:
- Journal Volume: 27; Journal Issue: 9; Journal ID: ISSN 1062-7995
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; buffer; CdS; CIGS; light soak; metastable
Citation Formats
Repins, Ingrid, Glynn, Stephen, Silverman, Timothy J., Garris, Rebekah, Bowers, Karen, Stevens, Bart, and Mansfield, Lorelle. Large metastability in Cu (In,Ga)Se2 devices: The importance of buffer properties. United States: N. p., 2019.
Web. doi:10.1002/pip.3145.
Repins, Ingrid, Glynn, Stephen, Silverman, Timothy J., Garris, Rebekah, Bowers, Karen, Stevens, Bart, & Mansfield, Lorelle. Large metastability in Cu (In,Ga)Se2 devices: The importance of buffer properties. United States. https://doi.org/10.1002/pip.3145
Repins, Ingrid, Glynn, Stephen, Silverman, Timothy J., Garris, Rebekah, Bowers, Karen, Stevens, Bart, and Mansfield, Lorelle. Wed .
"Large metastability in Cu (In,Ga)Se2 devices: The importance of buffer properties". United States. https://doi.org/10.1002/pip.3145. https://www.osti.gov/servlets/purl/1543253.
@article{osti_1543253,
title = {Large metastability in Cu (In,Ga)Se2 devices: The importance of buffer properties},
author = {Repins, Ingrid and Glynn, Stephen and Silverman, Timothy J. and Garris, Rebekah and Bowers, Karen and Stevens, Bart and Mansfield, Lorelle},
abstractNote = {Some commercial Cu (In,Ga)Se2 (CIGS) modules reveal large changes in current-voltage parameters with light soaking. While such changes are not necessarily indicative of a performance problem, the associated uncertainty may be disadvantageous in a highly competitive market. Thus, it is beneficial to understand the origin of large metastabilities in order to define what processing changes might diminish metastability without impacting other desirable aspects of high-performance devices. This report attempts to reproduce large metastabilities like those in some commercial products both through absorber and buffer processing variations in small devices. While variations of both types were found to affect metastability, only buffer variations could reproduce large metastability in high-efficiency devices. Device modeling validates that buffer effects alone are sufficient to explain the large metastability seen in these devices.},
doi = {10.1002/pip.3145},
journal = {Progress in Photovoltaics},
number = 9,
volume = 27,
place = {United States},
year = {Wed Jun 26 00:00:00 EDT 2019},
month = {Wed Jun 26 00:00:00 EDT 2019}
}
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Cited by: 12 works
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Figures / Tables:
Figure 1: Power, Voc, Isc, and fill factor as a function of 1-sun light soak time for an example of a commercial CIGS module.
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Works referencing / citing this record:
Enhanced Transmittance and Photoelectrochemical 2D Nanostructured N-Type Semiconductor ZnS Thin Film Prepared by One-Step Electrodeposition in a Non-Vacuum-Processed CIGS Cell
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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.