Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire
- Authors:
-
- United States of America Army Research Laboratory, 2800 Powder Mill Road, FCDD-RLS-DE, Adelphi, Maryland 20783-1138, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1543051
- Grant/Contract Number:
- AR0000872
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 3; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Derenge, Michael A., and Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire. United States: N. p., 2019.
Web. doi:10.1063/1.5092437.
Derenge, Michael A., & Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire. United States. https://doi.org/10.1063/1.5092437
Derenge, Michael A., and Jones, Kenneth A. Sun .
"Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire". United States. https://doi.org/10.1063/1.5092437.
@article{osti_1543051,
title = {Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire},
author = {Derenge, Michael A. and Jones, Kenneth A.},
abstractNote = {},
doi = {10.1063/1.5092437},
journal = {Journal of Applied Physics},
number = 3,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}
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https://doi.org/10.1063/1.5092437
https://doi.org/10.1063/1.5092437
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Cited by: 1 work
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