Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

Derenge, Michael A.; Jones, Kenneth A.

doi:10.1063/1.5092437

Title: Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

Abstract

In light of the necessity to anneal GaN to activate implanted dopants, the effects of the annealing temperature and time, the quality of the hydride vapor phase epitaxy grown GaN film, the quality of the annealing cap, and the effects of the stresses generated by the difference in the coefficients of thermal expansion of the film and the substrate are examined topographically using atomic force microscopy, and electrical measurements are made on Schottky diodes fabricated on the annealed samples. Here the results show that thermal decomposition begins at threading edge dislocations that form polygonized small angle grain boundaries during the annealing process; donor defects, probably nitrogen vacancies, are formed near the surface; and the donors are created more quickly when the annealing temperature is higher, the annealing time is longer, and the thermal stresses on the annealing cap are greater. The results suggest that the maximum annealing temperature is ~1300 °C, and at that annealing temperature, the annealing time should not exceed 4 min.

Authors:

^[1]; Jones, Kenneth A. ^[1]

Army Research Laboratory, Adelphi, MD (United States)

Publication Date:: Thu Jul 18 00:00:00 EDT 2019

Research Org.:: Army Research Laboratory, Adelphi, MD (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1494811

Alternate Identifier(s):: OSTI ID: 1543051

Grant/Contract Number:: AR0000872

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 126; Journal Issue: 3; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; crystallographic defects; semiconductors; electrical properties and parameters; Schottky diodes; electric measurements; materials heat treatment; atomic force microscopy; piezoelectric materials; thermal effects; thin films

Citation Formats


                    Derenge, Michael A., and Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5092437.

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                    Derenge, Michael A., & Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire.  United States.  https://doi.org/10.1063/1.5092437

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                    Derenge, Michael A., and Jones, Kenneth A. Thu .  
"Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire".  United States.  https://doi.org/10.1063/1.5092437.  https://www.osti.gov/servlets/purl/1494811.

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@article{osti_1494811,

  title        = {Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire},

  author       = {Derenge, Michael A. and Jones, Kenneth A.},

  abstractNote = {In light of the necessity to anneal GaN to activate implanted dopants, the effects of the annealing temperature and time, the quality of the hydride vapor phase epitaxy grown GaN film, the quality of the annealing cap, and the effects of the stresses generated by the difference in the coefficients of thermal expansion of the film and the substrate are examined topographically using atomic force microscopy, and electrical measurements are made on Schottky diodes fabricated on the annealed samples. Here the results show that thermal decomposition begins at threading edge dislocations that form polygonized small angle grain boundaries during the annealing process; donor defects, probably nitrogen vacancies, are formed near the surface; and the donors are created more quickly when the annealing temperature is higher, the annealing time is longer, and the thermal stresses on the annealing cap are greater. The results suggest that the maximum annealing temperature is ~1300 °C, and at that annealing temperature, the annealing time should not exceed 4 min.},

  doi          = {10.1063/1.5092437},

  journal      = {Journal of Applied Physics},

  number       = 3,

  volume       = 126,

  place        = {United States},

  year         = {Thu Jul 18 00:00:00 EDT 2019},

  month        = {Thu Jul 18 00:00:00 EDT 2019}

}

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Similar Records

Title: Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

Abstract

Citation Formats

Dislocations and stacking faults in hexagonal GaN journal, June 2011

Annealing studies of AlN capped, MOCVD grown GaN films journal, November 2014

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures journal, March 2001

Si-implantation activation annealing of GaN up to 1400°C journal, April 1998

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing journal, January 2006

Role of nitrogen vacancies in the luminescence of Mg-doped GaN journal, April 2012

Si implant-assisted Ohmic contacts to GaN journal, October 2010

On the nitrogen vacancy in GaN journal, October 2003

Wet chemical etching of AlN journal, August 1995

Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties journal, March 2004

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam: Vacancy-type defects in Mg-implanted GaN studied by positron beam journal, August 2015

Surface analysis of GaN decomposition journal, October 2002

Electrical activation characteristics of silicon-implanted GaN journal, April 2005

Activation of ion implanted Si in GaN using a dual AlN annealing cap journal, February 2009

Thermal stability of GaN investigated by Raman scattering journal, August 1998

Origin of hexagonal-shaped etch pits formed in (0001) GaN films journal, July 2000

Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN journal, January 1984

Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals journal, January 2015

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion journal, January 2012

Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy journal, February 2004

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN journal, March 2004

Dislocations and stacking faults in hexagonal GaN
journal, June 2011

Annealing studies of AlN capped, MOCVD grown GaN films
journal, November 2014

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures
journal, March 2001

Si-implantation activation annealing of GaN up to 1400°C
journal, April 1998

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing
journal, January 2006

Role of nitrogen vacancies in the luminescence of Mg-doped GaN
journal, April 2012

Si implant-assisted Ohmic contacts to GaN
journal, October 2010

On the nitrogen vacancy in GaN
journal, October 2003

Wet chemical etching of AlN
journal, August 1995

Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
journal, March 2004

Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam: Vacancy-type defects in Mg-implanted GaN studied by positron beam
journal, August 2015

Surface analysis of GaN decomposition
journal, October 2002

Electrical activation characteristics of silicon-implanted GaN
journal, April 2005

Activation of ion implanted Si in GaN using a dual AlN annealing cap
journal, February 2009

Thermal stability of GaN investigated by Raman scattering
journal, August 1998

Origin of hexagonal-shaped etch pits formed in (0001) GaN films
journal, July 2000

Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
journal, January 1984

Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
journal, January 2015

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
journal, January 2012

Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy
journal, February 2004

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN
journal, March 2004