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Title: Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

Authors:
ORCiD logo [1];  [1]
  1. United States of America Army Research Laboratory, 2800 Powder Mill Road, FCDD-RLS-DE, Adelphi, Maryland 20783-1138, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1543051
Grant/Contract Number:  
AR0000872
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 126 Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Derenge, Michael A., and Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire. United States: N. p., 2019. Web. https://doi.org/10.1063/1.5092437.
Derenge, Michael A., & Jones, Kenneth A. Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire. United States. https://doi.org/10.1063/1.5092437
Derenge, Michael A., and Jones, Kenneth A. Sun . "Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire". United States. https://doi.org/10.1063/1.5092437.
@article{osti_1543051,
title = {Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire},
author = {Derenge, Michael A. and Jones, Kenneth A.},
abstractNote = {},
doi = {10.1063/1.5092437},
journal = {Journal of Applied Physics},
number = 3,
volume = 126,
place = {United States},
year = {2019},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5092437

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Cited by: 1 work
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