Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

doi:10.1103/PhysRevLett.123.026805

This content will become publicly available on July 10, 2020

Title: Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Authors:: Lim, Z. H.; Quackenbush, N. F.; Penn, A. N.; Chrysler, M.; Bowden, M.; Zhu, Z.; Ablett, J. M.; Lee, T. -L.; LeBeau, J. M.; Woicik, J. C.; Sushko, P. V.; Chambers, S. A.; Ngai, J. H.

Publication Date:: 2019-07-11

Sponsoring Org.:: USDOE

OSTI Identifier:: 1543029

Grant/Contract Number:: 10122

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Name: Physical Review Letters Journal Volume: 123 Journal Issue: 2; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., and Ngai, J. H. Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon.  United States: N. p., 2019. 
        Web.  doi:10.1103/PhysRevLett.123.026805.

Copy to clipboard


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., & Ngai, J. H. Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon.  United States.  doi:10.1103/PhysRevLett.123.026805.

Copy to clipboard


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., and Ngai, J. H. Thu .  
        "Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon".  United States.  doi:10.1103/PhysRevLett.123.026805.

Copy to clipboard


                    
@article{osti_1543029,

  title        = {Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon},

  author       = {Lim, Z. H. and Quackenbush, N. F. and Penn, A. N. and Chrysler, M. and Bowden, M. and Zhu, Z. and Ablett, J. M. and Lee, T. -L. and LeBeau, J. M. and Woicik, J. C. and Sushko, P. V. and Chambers, S. A. and Ngai, J. H.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.123.026805},

  journal      = {Physical Review Letters},

  number       = 2,

  volume       = 123,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

This content will become publicly available on July 10, 2020

Publisher's Version of Record

DOI: 10.1103/PhysRevLett.123.026805

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 4 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

Ji, Li; McDaniel, Martin D.; Wang, Shijun
Nature Nanotechnology, Vol. 10, Issue 1
DOI: 10.1038/nnano.2014.277

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982

Tsui, D. C.; Stormer, H. L.; Gossard, A. C.
Physical Review Letters, Vol. 48, Issue 22
DOI: 10.1103/PhysRevLett.48.1559

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016

Zhong, Z.; Hansmann, P.
Physical Review B, Vol. 93, Issue 23
DOI: 10.1103/PhysRevB.93.235116

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
journal, March 2014

Sang, Xiahan; LeBeau, James M.
Ultramicroscopy, Vol. 138
DOI: 10.1016/j.ultramic.2013.12.004

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987

Chambers, S. A.; Hill, D. M.; Xu, F.
Physical Review B, Vol. 35, Issue 2
DOI: 10.1103/PhysRevB.35.634

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

McKee, R. A.; Walker, F. J.; Chisholm, M. F.
Physical Review Letters, Vol. 81, Issue 14
DOI: 10.1103/PhysRevLett.81.3014

Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
journal, January 2017

Kornblum, L.; Fenning, D. P.; Faucher, J.
Energy & Environmental Science, Vol. 10, Issue 1
DOI: 10.1039/C6EE03170F

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd ₃ As ₂ Nanoplates
journal, May 2016

Li, Cai-Zhen; Li, Jin-Guang; Wang, Li-Xian
ACS Nano, Vol. 10, Issue 6
DOI: 10.1021/acsnano.6b01568

Complex band structure and the band alignment problem at the Si–high- $k$ dielectric interface
journal, May 2005

Demkov, A. A.; Fonseca, L. R. C.; Verret, E.
Physical Review B, Vol. 71, Issue 19
DOI: 10.1103/PhysRevB.71.195306

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Newman, R. C.
Journal of Physics: Condensed Matter, Vol. 12, Issue 25
DOI: 10.1088/0953-8984/12/25/201

Surface depletion in doped SrTiO3 thin films
journal, March 2004

Ohtomo, A.; Hwang, H. Y.
Applied Physics Letters, Vol. 84, Issue 10
DOI: 10.1063/1.1668329

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970

Doniach, S.; Sunjic, M.
Journal of Physics C: Solid State Physics, Vol. 3, Issue 2
DOI: 10.1088/0022-3719/3/2/010

Dielectric properties of sputtered ${SrTiO}_{3}$ films
journal, May 1994

Christen, H. -M.; Mannhart, J.; Williams, E. J.
Physical Review B, Vol. 49, Issue 17
DOI: 10.1103/PhysRevB.49.12095

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO $_{3}$ (001)
journal, January 2011

Marshall, Matthew S. J.; Newell, David T.; Payne, David J.
Physical Review B, Vol. 83, Issue 3
DOI: 10.1103/PhysRevB.83.035410

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan
Advanced Materials Interfaces, Vol. 2, Issue 4
DOI: 10.1002/admi.201400497

Widths of the Atomic k–n7 Levels
journal, January 2001

Campbell, J. L.; Papp, Tibor
Atomic Data and Nuclear Data Tables, Vol. 77, Issue 1
DOI: 10.1006/adnd.2000.0848

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

McKee, R. A.
Science, Vol. 293, Issue 5529
DOI: 10.1126/science.293.5529.468

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped ${SrTiO}_{3}$
journal, June 2010

Ngai, J. H.; Segal, Y.; Su, D.
Physical Review B, Vol. 81, Issue 24
DOI: 10.1103/PhysRevB.81.241307

Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, May 2009

Copie, O.; Garcia, V.; Bödefeld, C.
Physical Review Letters, Vol. 102, Issue 21
DOI: 10.1103/PhysRevLett.102.216804

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

Chambers, S. A.; Liang, Y.; Yu, Z.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
DOI: 10.1116/1.1365132

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.
Journal of Materials Research, Vol. 32, Issue 2
DOI: 10.1557/jmr.2016.496

Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface
journal, September 2018

Du, Y.; Sushko, P. V.; Spurgeon, S. R.
Physical Review Materials, Vol. 2, Issue 9
DOI: 10.1103/PhysRevMaterials.2.094602

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Woicik, J.; Li, H.; Zschack, P.
Physical Review B, Vol. 73, Issue 2
DOI: 10.1103/PhysRevB.73.024112

Hall Mobility in SrTi $O_{3}$
journal, September 1967

Frederikse, H. P. R.; Hosler, W. R.
Physical Review, Vol. 161, Issue 3
DOI: 10.1103/PhysRev.161.822

Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984

Tersoff, J.
Physical Review B, Vol. 30, Issue 8
DOI: 10.1103/PhysRevB.30.4874

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

Rossel, C.; Mereu, B.; Marchiori, C.
Applied Physics Letters, Vol. 89, Issue 5
DOI: 10.1063/1.2236464

Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications
journal, February 2015

McDaniel, Martin D.; Hu, Chengqing; Lu, Sirong
Journal of Applied Physics, Vol. 117, Issue 5
DOI: 10.1063/1.4906953

Atomic and electronic structure of the ${S i / S r T i O}_{3}$ interface
journal, September 2003

Zhang, X.; Demkov, A. A.; Li, Hao
Physical Review B, Vol. 68, Issue 12
DOI: 10.1103/PhysRevB.68.125323

Similar records in OSTI.GOV collections:

SISGR: Atom chip microscopy: A novel probe for strongly correlated materials

Technical Report Lev, Benjamin L.

Microscopy techniques co-opted from nonlinear optics and high energy physics have complemented solid-state probes in elucidating the order manifest in condensed matter materials. Up until now, however, no attempts have been made to use modern techniques of ultracold atomic physics to directly explore properties of strongly correlated or topologically protected materials. Our current program is focused on introducing a novel magnetic field microscopy technique into the toolbox of imaging probes. Our prior DOE ESPM program funded the development of a novel instrument using a dilute gas Bose-Einstein condensate (BEC) as a scanning probe capable of measuring tiny magnetic (and electric)more »« less
Molecular dynamics simulations of the first charge of a Li-ion—Si-anode nanobattery

Journal Article Galvez-Aranda, Diego E. ; Ponce, Victor ; Seminario, Jorge M. - Journal of Molecular Modeling

Rechargeable lithium-ion batteries are the most popular devices for energy storage but still a lot of research needs to be done to improve their cycling and storage capacity. Silicon has been proposed as an anode material because of its large theoretical capacity of ~3600 mAh/g. Therefore, focus is needed on the lithiation process of silicon anodes where it is known that the anode increases its volume more than 300%, producing cracking and other damages. In this study, we performed molecular dynamics atomistic simulations to study the swelling, alloying, and amorphization of a silicon nanocrystal anode in a full nanobattery modelmore »« less
Cited by 9
DOI: 10.1007/s00894-017-3283-2

Full Text Available
Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

Journal Article Lim, Zhenghui ; Quackenbush, Nicholas ; Penn, Aubrey ; ... - Physical Review Letters

We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
DOI: 10.1103/PhysRevLett.123.026805
Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

Journal Article El-Atab, Nazek ; Nayfeh, Ammar ; Ozcan, Ayse ; ... - Applied Physics Letters

A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔV{sub t}) vs. programming voltage is studied with and without the silicon nanoparticles. Applying −1 V for 5 s at the gate of the memory with nanoparticles results in a ΔV{sub t} of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at −1 V programming voltage, the ΔV{sub t} is negligible. In order to getmore »« less
DOI: 10.1063/1.4861590
Simulation of temperature dependent dielectric breakdown in n{sup +}-polySi/SiO{sub 2}/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias

Journal Article Samanta, Piyas, E-mail: piyas@vcfw.org ; Mandal, Krishna C., E-mail: mandalk@cec.sc.edu - Journal of Applied Physics

We present for the first time a thorough investigation of trapped-hole induced gate oxide deterioration and simulation results of time-dependent dielectric breakdown (TDDB) of thin (7–25 nm) silicon dioxide (SiO{sub 2}) films thermally grown on (0 0 0 1) silicon (Si) face of n-type 6H-silicon carbide (n-6H-SiC). Gate oxide reliability was studied during both constant voltage and current stress with positive bias on the degenerately doped n-type poly-crystalline silicon (n{sup +}-polySi) gate at a wide range of temperatures between 27 and 225 °C. The gate leakage current was identified as the Poole-Frenkel (PF) emission of electrons trapped at an energy 0.92 eV belowmore »« less
DOI: 10.1063/1.4960579

Similar Records

This content will become publicly available on July 10, 2020

Title: Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Citation Formats

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst journal, December 2014

Two-Dimensional Magnetotransport in the Extreme Quantum Limit journal, May 1982

Tuning the work function in transition metal oxides and their heterostructures journal, June 2016

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge journal, March 2014

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures journal, January 1987

Crystalline Oxides on Silicon: The First Five Monolayers journal, October 1998

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic journal, January 2017

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd 3 As 2 Nanoplates journal, May 2016

Complex band structure and the band alignment problem at the Si–high- k dielectric interface journal, May 2005

Oxygen diffusion and precipitation in Czochralski silicon journal, June 2000

Surface depletion in doped SrTiO3 thin films journal, March 2004

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals journal, February 1970

Dielectric properties of sputtered SrTiO 3 films journal, May 1994

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO 3 (001) journal, January 2011

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface journal, February 2015

Widths of the Atomic k–n7 Levels journal, January 2001

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide journal, July 2001

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped SrTiO 3 journal, June 2010

Towards Two-Dimensional Metallic Behavior at LaAlO 3 / SrTiO 3 Interfaces journal, May 2009

Band offset and structure of SrTiO3 /Si(001) heterojunctions journal, May 2001

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities journal, January 2017

Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface journal, September 2018

Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on Si ( 001 ) by kinetically controlled sequential deposition journal, January 2006

Hall Mobility in SrTi O 3 journal, September 1967

Theory of semiconductor heterojunctions: The role of quantum dipoles journal, October 1984

Field-effect transistors with SrHfO3 as gate oxide journal, July 2006

Atomic layer deposition of crystalline SrHfO 3 directly on Ge (001) for high- k dielectric applications journal, February 2015

Atomic and electronic structure of the S i / S r T i O 3 interface journal, September 2003

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
journal, March 2014

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
journal, January 2017

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd ₃ As ₂ Nanoplates
journal, May 2016

Complex band structure and the band alignment problem at the Si–high- $k$ dielectric interface
journal, May 2005

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Surface depletion in doped SrTiO3 thin films
journal, March 2004

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970

Dielectric properties of sputtered ${SrTiO}_{3}$ films
journal, May 1994

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO $_{3}$ (001)
journal, January 2011

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

Widths of the Atomic k–n7 Levels
journal, January 2001

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped ${SrTiO}_{3}$
journal, June 2010

Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, May 2009

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface
journal, September 2018

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Hall Mobility in SrTi $O_{3}$
journal, September 1967

Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications
journal, February 2015

Atomic and electronic structure of the ${S i / S r T i O}_{3}$ interface
journal, September 2003