Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Lim, Z. H.; Quackenbush, N. F.; Penn, A. N.; Chrysler, M.; Bowden, M.; Zhu, Z.; Ablett, J. M.; Lee, T. -L.; LeBeau, J. M.; Woicik, J. C.; Sushko, P. V.; Chambers, S. A.; Ngai, J. H.

doi:10.1103/PhysRevLett.123.026805

Title: Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Authors:: Lim, Z. H.; Quackenbush, N. F.; Penn, A. N.; Chrysler, M.; Bowden, M.; Zhu, Z.; Ablett, J. M.; Lee, T. -L.; LeBeau, J. M.; Woicik, J. C.; Sushko, P. V.; Chambers, S. A.; Ngai, J. H.

Publication Date:: 2019-07-11

Sponsoring Org.:: USDOE

OSTI Identifier:: 1543029

Grant/Contract Number:: 10122

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Name: Physical Review Letters Journal Volume: 123 Journal Issue: 2; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., and Ngai, J. H. Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon.  United States: N. p., 2019. 
        Web.  doi:10.1103/PhysRevLett.123.026805.

Copy to clipboard


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., & Ngai, J. H. Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon.  United States.  doi:https://doi.org/10.1103/PhysRevLett.123.026805

Copy to clipboard


                    Lim, Z. H., Quackenbush, N. F., Penn, A. N., Chrysler, M., Bowden, M., Zhu, Z., Ablett, J. M., Lee, T. -L., LeBeau, J. M., Woicik, J. C., Sushko, P. V., Chambers, S. A., and Ngai, J. H. Thu .  
        "Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon".  United States.  doi:https://doi.org/10.1103/PhysRevLett.123.026805.

Copy to clipboard


                    
@article{osti_1543029,

  title        = {Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon},

  author       = {Lim, Z. H. and Quackenbush, N. F. and Penn, A. N. and Chrysler, M. and Bowden, M. and Zhu, Z. and Ablett, J. M. and Lee, T. -L. and LeBeau, J. M. and Woicik, J. C. and Sushko, P. V. and Chambers, S. A. and Ngai, J. H.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.123.026805},

  journal      = {Physical Review Letters},

  number       = 2,

  volume       = 123,

  place        = {United States},

  year         = {2019},

  month        = {7}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
DOI: https://doi.org/10.1103/PhysRevLett.123.026805

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 5 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

Ji, Li; McDaniel, Martin D.; Wang, Shijun
Nature Nanotechnology, Vol. 10, Issue 1
DOI: 10.1038/nnano.2014.277

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982

Tsui, D. C.; Stormer, H. L.; Gossard, A. C.
Physical Review Letters, Vol. 48, Issue 22
DOI: 10.1103/PhysRevLett.48.1559

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016

Zhong, Z.; Hansmann, P.
Physical Review B, Vol. 93, Issue 23
DOI: 10.1103/PhysRevB.93.235116

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
journal, March 2014

Sang, Xiahan; LeBeau, James M.
Ultramicroscopy, Vol. 138
DOI: 10.1016/j.ultramic.2013.12.004

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987

Chambers, S. A.; Hill, D. M.; Xu, F.
Physical Review B, Vol. 35, Issue 2
DOI: 10.1103/PhysRevB.35.634

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

McKee, R. A.; Walker, F. J.; Chisholm, M. F.
Physical Review Letters, Vol. 81, Issue 14
DOI: 10.1103/PhysRevLett.81.3014

Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
journal, January 2017

Kornblum, L.; Fenning, D. P.; Faucher, J.
Energy & Environmental Science, Vol. 10, Issue 1
DOI: 10.1039/C6EE03170F

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd ₃ As ₂ Nanoplates
journal, May 2016

Li, Cai-Zhen; Li, Jin-Guang; Wang, Li-Xian
ACS Nano, Vol. 10, Issue 6
DOI: 10.1021/acsnano.6b01568

Complex band structure and the band alignment problem at the Si–high- $k$ dielectric interface
journal, May 2005

Demkov, A. A.; Fonseca, L. R. C.; Verret, E.
Physical Review B, Vol. 71, Issue 19
DOI: 10.1103/PhysRevB.71.195306

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Newman, R. C.
Journal of Physics: Condensed Matter, Vol. 12, Issue 25
DOI: 10.1088/0953-8984/12/25/201

Surface depletion in doped SrTiO3 thin films
journal, March 2004

Ohtomo, A.; Hwang, H. Y.
Applied Physics Letters, Vol. 84, Issue 10
DOI: 10.1063/1.1668329

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970

Doniach, S.; Sunjic, M.
Journal of Physics C: Solid State Physics, Vol. 3, Issue 2
DOI: 10.1088/0022-3719/3/2/010

Dielectric properties of sputtered ${SrTiO}_{3}$ films
journal, May 1994

Christen, H. -M.; Mannhart, J.; Williams, E. J.
Physical Review B, Vol. 49, Issue 17
DOI: 10.1103/PhysRevB.49.12095

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO $_{3}$ (001)
journal, January 2011

Marshall, Matthew S. J.; Newell, David T.; Payne, David J.
Physical Review B, Vol. 83, Issue 3
DOI: 10.1103/PhysRevB.83.035410

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan
Advanced Materials Interfaces, Vol. 2, Issue 4
DOI: 10.1002/admi.201400497

Widths of the Atomic k–n7 Levels
journal, January 2001

Campbell, J. L.; Papp, Tibor
Atomic Data and Nuclear Data Tables, Vol. 77, Issue 1
DOI: 10.1006/adnd.2000.0848

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

McKee, R. A.
Science, Vol. 293, Issue 5529
DOI: 10.1126/science.293.5529.468

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped ${SrTiO}_{3}$
journal, June 2010

Ngai, J. H.; Segal, Y.; Su, D.
Physical Review B, Vol. 81, Issue 24
DOI: 10.1103/PhysRevB.81.241307

Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, May 2009

Copie, O.; Garcia, V.; Bödefeld, C.
Physical Review Letters, Vol. 102, Issue 21
DOI: 10.1103/PhysRevLett.102.216804

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

Chambers, S. A.; Liang, Y.; Yu, Z.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 3
DOI: 10.1116/1.1365132

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

Ngai, J. H.; Ahmadi-Majlan, K.; Moghadam, J.
Journal of Materials Research, Vol. 32, Issue 2
DOI: 10.1557/jmr.2016.496

Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface
journal, September 2018

Du, Y.; Sushko, P. V.; Spurgeon, S. R.
Physical Review Materials, Vol. 2, Issue 9
DOI: 10.1103/PhysRevMaterials.2.094602

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Woicik, J.; Li, H.; Zschack, P.
Physical Review B, Vol. 73, Issue 2
DOI: 10.1103/PhysRevB.73.024112

Hall Mobility in SrTi $O_{3}$
journal, September 1967

Frederikse, H. P. R.; Hosler, W. R.
Physical Review, Vol. 161, Issue 3
DOI: 10.1103/PhysRev.161.822

Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984

Tersoff, J.
Physical Review B, Vol. 30, Issue 8
DOI: 10.1103/PhysRevB.30.4874

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

Rossel, C.; Mereu, B.; Marchiori, C.
Applied Physics Letters, Vol. 89, Issue 5
DOI: 10.1063/1.2236464

Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications
journal, February 2015

McDaniel, Martin D.; Hu, Chengqing; Lu, Sirong
Journal of Applied Physics, Vol. 117, Issue 5
DOI: 10.1063/1.4906953

Atomic and electronic structure of the ${S i / S r T i O}_{3}$ interface
journal, September 2003

Zhang, X.; Demkov, A. A.; Li, Hao
Physical Review B, Vol. 68, Issue 12
DOI: 10.1103/PhysRevB.68.125323

Similar Records in DOE PAGES and OSTI.GOV collections:

Charge Transfer and Built-in Electric Fields Between a Crystalline Oxide and Silicon

Journal Article Lim, Zhenghui ; Quackenbush, Nicholas ; Penn, Aubrey ; ... - Physical Review Letters

We report charge transfer and built-in electric fields across the epitaxial SrNbxTi1-xO3-d / Si(001) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Analysis of these asymmetries enables built-in fields to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
DOI: https://doi.org/10.1103/PhysRevLett.123.026805
Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Journal Article Lim, Zhenghui ; Quackenbush, Nicholas ; Penn, Aubrey ; ... - Physical Review Letters

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich setting in which built-in fields can be explored. Here, we present an electrical transport and hard X-ray photoelectron spectroscopy study of epitaxial SrNbxTi1-xO3-d / Si heterojunctions.
DOI: https://doi.org/10.1103/PhysRevLett.123.026805
Fabricating metal-oxide-semiconductor field-effect transistors on a polyethylene terephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force

Journal Article Sakaike, Kohei ; Akazawa, Muneki ; Nakamura, Shogo ; ... - Applied Physics Letters

A low-temperature local-layer technique for transferring a single-crystalline silicon (c-Si) film by using a meniscus force was proposed, and an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated on polyethylene terephthalate (PET) substrate. It was demonstrated that it is possible to transfer and form c-Si films in the required shape at the required position on PET substrates at extremely low temperatures by utilizing a meniscus force. The proposed technique for layer transfer was applied for fabricating high-performance c-Si MOSFETs on a PET substrate. The fabricated MOSFET showed a high on/off ratio of more than 10{sup 8} and a high field-effect mobilitymore »« less
DOI: https://doi.org/10.1063/1.4837696
Correlation between Crystallinity, Charge Transport, and Electrical Stability in an Ambipolar Polymer Field-Effect Transistor Based on Poly(naphthalene-alt-diketopyrrolopyrrole)

Journal Article Kim, Beom Joon ; Lee, Hyo-Sang ; Lee, Joong Seok ; ... - J. Phys. Chem. C
DOI: https://doi.org/10.1021/jp400664r
Identifying Ionic and Electronic Charge Transfer at Oxide Heterointerfaces

Journal Article Rose, Marc‐André ; Šmíd, Břetislav ; Vorokhta, Mykhailo ; ... - Advanced Materials

The ability to tailor oxide heterointerfaces has led to novel properties in low-dimensional oxide systems. A fundamental understanding of these properties is based on the concept of electronic charge transfer. However, the electronic properties of oxide heterointerfaces crucially depend on their ionic constitution and defect structure: ionic charges contribute to charge transfer and screening at oxide interfaces, triggering a thermodynamic balance of ionic and electronic structures. Quantitative understanding of the electronic and ionic roles regarding charge-transfer phenomena poses a central challenge. Here, the electronic and ionic structure is simultaneously investigated at the prototypical charge-transfer heterointerface, LaAlO₃/SrTiO₃. Applying in situ photoemissionmore »« less
DOI: https://doi.org/10.1002/adma.202004132

Similar Records

Title: Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

Citation Formats

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst journal, December 2014

Two-Dimensional Magnetotransport in the Extreme Quantum Limit journal, May 1982

Tuning the work function in transition metal oxides and their heterostructures journal, June 2016

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge journal, March 2014

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures journal, January 1987

Crystalline Oxides on Silicon: The First Five Monolayers journal, October 1998

Solar hydrogen production using epitaxial SrTiO 3 on a GaAs photovoltaic journal, January 2017

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd 3 As 2 Nanoplates journal, May 2016

Complex band structure and the band alignment problem at the Si–high- k dielectric interface journal, May 2005

Oxygen diffusion and precipitation in Czochralski silicon journal, June 2000

Surface depletion in doped SrTiO3 thin films journal, March 2004

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals journal, February 1970

Dielectric properties of sputtered SrTiO 3 films journal, May 1994

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO 3 (001) journal, January 2011

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface journal, February 2015

Widths of the Atomic k–n7 Levels journal, January 2001

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide journal, July 2001

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped SrTiO 3 journal, June 2010

Towards Two-Dimensional Metallic Behavior at LaAlO 3 / SrTiO 3 Interfaces journal, May 2009

Band offset and structure of SrTiO3 /Si(001) heterojunctions journal, May 2001

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities journal, January 2017

Layer-resolved band bending at the n − SrTi O 3 ( 001 ) / p − Ge ( 001 ) interface journal, September 2018

Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on Si ( 001 ) by kinetically controlled sequential deposition journal, January 2006

Hall Mobility in SrTi O 3 journal, September 1967

Theory of semiconductor heterojunctions: The role of quantum dipoles journal, October 1984

Field-effect transistors with SrHfO3 as gate oxide journal, July 2006

Atomic layer deposition of crystalline SrHfO 3 directly on Ge (001) for high- k dielectric applications journal, February 2015

Atomic and electronic structure of the S i / S r T i O 3 interface journal, September 2003

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst
journal, December 2014

Two-Dimensional Magnetotransport in the Extreme Quantum Limit
journal, May 1982

Tuning the work function in transition metal oxides and their heterostructures
journal, June 2016

Revolving scanning transmission electron microscopy: Correcting sample drift distortion without prior knowledge
journal, March 2014

Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures
journal, January 1987

Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998

Solar hydrogen production using epitaxial SrTiO ₃ on a GaAs photovoltaic
journal, January 2017

Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd ₃ As ₂ Nanoplates
journal, May 2016

Complex band structure and the band alignment problem at the Si–high- $k$ dielectric interface
journal, May 2005

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Surface depletion in doped SrTiO3 thin films
journal, March 2004

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals
journal, February 1970

Dielectric properties of sputtered ${SrTiO}_{3}$ films
journal, May 1994

Atomic and electronic surface structures of dopants in oxides: STM and XPS of Nb- and La-doped SrTiO $_{3}$ (001)
journal, January 2011

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface
journal, February 2015

Widths of the Atomic k–n7 Levels
journal, January 2001

Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
journal, July 2001

Electric field tuned crossover from classical to weakly localized quantum transport in electron doped ${SrTiO}_{3}$
journal, June 2010

Towards Two-Dimensional Metallic Behavior at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, May 2009

Band offset and structure of SrTiO3 /Si(001) heterojunctions
journal, May 2001

Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
journal, January 2017

Layer-resolved band bending at the $n - SrTi O_{3} (001) / p - Ge (001)$ interface
journal, September 2018

Anomalous lattice expansion of coherently strained ${SrTiO}_{3}$ thin films grown on $Si (001)$ by kinetically controlled sequential deposition
journal, January 2006

Hall Mobility in SrTi $O_{3}$
journal, September 1967

Theory of semiconductor heterojunctions: The role of quantum dipoles
journal, October 1984

Field-effect transistors with SrHfO3 as gate oxide
journal, July 2006

Atomic layer deposition of crystalline SrHfO ₃ directly on Ge (001) for high- k dielectric applications
journal, February 2015

Atomic and electronic structure of the ${S i / S r T i O}_{3}$ interface
journal, September 2003