Defect characterisation in Cu2ZnSnSe4 kesterites via resonance Raman spectroscopy and the impact on optoelectronic solar cell properties
Abstract
Polycrystalline kesterite Cu2ZnSnSe4 (CZTSe) semiconductors have drawn attention as promising absorber candidates for the next generation of thin film photovoltaics. However, the narrow tolerance to stoichiometry variations that favours the formation of secondary phases and cluster defects is a challenging drawback that restrains the device performances. In this context Raman spectroscopy has demonstrated to be a powerful tool for the characterization of CZTSe, allowing the assessment of the relevant parameters such as structure, crystal quality and secondary phases.
- Authors:
-
- Catalonia Inst. for Energy Research (IREC), Sant Adrià de Besòs (Spain); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Catalonia Inst. for Energy Research (IREC), Sant Adrià de Besòs (Spain)
- Catalonia Inst. for Energy Research (IREC), Sant Adrià de Besòs (Spain); Univ. de Barcelona (Spain)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1542762
- Alternate Identifier(s):
- OSTI ID: 1513304
- Report Number(s):
- NREL/JA-5900-74299
Journal ID: ISSN 2050-7488; JMCAET
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Materials Chemistry. A
- Additional Journal Information:
- Journal Volume: 7; Journal Issue: 21; Journal ID: ISSN 2050-7488
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin film photovoltaics; semiconductors
Citation Formats
Dimitrievska, Mirjana, Oliva, Florian, Guc, Maxim, Giraldo, Sergio, Saucedo, Edgardo, Pérez-Rodríguez, Alejandro, and Izquierdo-Roca, Victor. Defect characterisation in Cu2ZnSnSe4 kesterites via resonance Raman spectroscopy and the impact on optoelectronic solar cell properties. United States: N. p., 2019.
Web. doi:10.1039/C9TA03625C.
Dimitrievska, Mirjana, Oliva, Florian, Guc, Maxim, Giraldo, Sergio, Saucedo, Edgardo, Pérez-Rodríguez, Alejandro, & Izquierdo-Roca, Victor. Defect characterisation in Cu2ZnSnSe4 kesterites via resonance Raman spectroscopy and the impact on optoelectronic solar cell properties. United States. https://doi.org/10.1039/C9TA03625C
Dimitrievska, Mirjana, Oliva, Florian, Guc, Maxim, Giraldo, Sergio, Saucedo, Edgardo, Pérez-Rodríguez, Alejandro, and Izquierdo-Roca, Victor. Mon .
"Defect characterisation in Cu2ZnSnSe4 kesterites via resonance Raman spectroscopy and the impact on optoelectronic solar cell properties". United States. https://doi.org/10.1039/C9TA03625C. https://www.osti.gov/servlets/purl/1542762.
@article{osti_1542762,
title = {Defect characterisation in Cu2ZnSnSe4 kesterites via resonance Raman spectroscopy and the impact on optoelectronic solar cell properties},
author = {Dimitrievska, Mirjana and Oliva, Florian and Guc, Maxim and Giraldo, Sergio and Saucedo, Edgardo and Pérez-Rodríguez, Alejandro and Izquierdo-Roca, Victor},
abstractNote = {Polycrystalline kesterite Cu2ZnSnSe4 (CZTSe) semiconductors have drawn attention as promising absorber candidates for the next generation of thin film photovoltaics. However, the narrow tolerance to stoichiometry variations that favours the formation of secondary phases and cluster defects is a challenging drawback that restrains the device performances. In this context Raman spectroscopy has demonstrated to be a powerful tool for the characterization of CZTSe, allowing the assessment of the relevant parameters such as structure, crystal quality and secondary phases.},
doi = {10.1039/C9TA03625C},
journal = {Journal of Materials Chemistry. A},
number = 21,
volume = 7,
place = {United States},
year = {Mon May 06 00:00:00 EDT 2019},
month = {Mon May 06 00:00:00 EDT 2019}
}
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