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Title: Kinetic control of tunable multi-state switching in ferroelectric thin films

Abstract

Deterministic creation of multiple ferroelectric states with intermediate values of polarization remains challenging due to the inherent bi-stability of ferroelectric switching. In this work we show the ability to select any desired intermediate polarization value via control of the switching pathway in (111)-oriented PbZr 0.2Ti 0.8O 3 films. Such switching phenomena are driven by kinetic control of the volume fraction of two geometrically different domain structures which are generated by two distinct switching pathways: one direct, bipolar-like switching and another multi-step switching process with the formation of a thermodynamically-stable intermediate twinning structure. Such control of switching pathways is enabled by the competition between elastic and electrostatic energies which favors different types of ferroelastic switching that can occur. As a whole, our work reflects an alternative approach that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, and repeatedly obtainable multi-state polarization without compromising other important properties, and holds promise for non-volatile multi-state functional applications.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [1];  [1];  [3];  [3]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [4];  [3]; ORCiD logo [5]; ORCiD logo [6]
  1. Univ. of California, Berkeley, CA (United States)
  2. Carnegie Inst. of Science, Washington, DC (United States). Geophysical Lab.
  3. Pennsylvania State Univ., University Park, PA (United States)
  4. Univ. of California, Berkeley, CA (United States); Harbin Inst. of Technology (China)
  5. Univ. of Pennsylvania, Philadelphia, PA (United States)
  6. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Department of the Navy, Office of Naval Research (ONR); US Army Research Laboratory (ARL); National Science Foundation (NSF); Gordon and Betty Moore Foundation’s EPiQS Initiative
OSTI Identifier:
1542392
Grant/Contract Number:  
AC02-05CH11231; SC0012375; OISE-1545907; W911NF-17-1-0462; GBMF5307; N00014-17-1-2574
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, R., Liu, S., Saremi, S., Gao, R., Wang, J. J., Hong, Z., Lu, H., Ghosh, A., Pandya, S., Bonturim, E., Chen, Z. H., Chen, L. Q., Rappe, A. M., and Martin, L. W. Kinetic control of tunable multi-state switching in ferroelectric thin films. United States: N. p., 2019. Web. doi:10.1038/s41467-019-09207-9.
Xu, R., Liu, S., Saremi, S., Gao, R., Wang, J. J., Hong, Z., Lu, H., Ghosh, A., Pandya, S., Bonturim, E., Chen, Z. H., Chen, L. Q., Rappe, A. M., & Martin, L. W. Kinetic control of tunable multi-state switching in ferroelectric thin films. United States. doi:10.1038/s41467-019-09207-9.
Xu, R., Liu, S., Saremi, S., Gao, R., Wang, J. J., Hong, Z., Lu, H., Ghosh, A., Pandya, S., Bonturim, E., Chen, Z. H., Chen, L. Q., Rappe, A. M., and Martin, L. W. Wed . "Kinetic control of tunable multi-state switching in ferroelectric thin films". United States. doi:10.1038/s41467-019-09207-9. https://www.osti.gov/servlets/purl/1542392.
@article{osti_1542392,
title = {Kinetic control of tunable multi-state switching in ferroelectric thin films},
author = {Xu, R. and Liu, S. and Saremi, S. and Gao, R. and Wang, J. J. and Hong, Z. and Lu, H. and Ghosh, A. and Pandya, S. and Bonturim, E. and Chen, Z. H. and Chen, L. Q. and Rappe, A. M. and Martin, L. W.},
abstractNote = {Deterministic creation of multiple ferroelectric states with intermediate values of polarization remains challenging due to the inherent bi-stability of ferroelectric switching. In this work we show the ability to select any desired intermediate polarization value via control of the switching pathway in (111)-oriented PbZr0.2Ti0.8O3 films. Such switching phenomena are driven by kinetic control of the volume fraction of two geometrically different domain structures which are generated by two distinct switching pathways: one direct, bipolar-like switching and another multi-step switching process with the formation of a thermodynamically-stable intermediate twinning structure. Such control of switching pathways is enabled by the competition between elastic and electrostatic energies which favors different types of ferroelastic switching that can occur. As a whole, our work reflects an alternative approach that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, and repeatedly obtainable multi-state polarization without compromising other important properties, and holds promise for non-volatile multi-state functional applications.},
doi = {10.1038/s41467-019-09207-9},
journal = {Nature Communications},
number = 1,
volume = 10,
place = {United States},
year = {2019},
month = {3}
}

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