Electric-field-tuned topological phase transition in ultrathin Na3Bi
Abstract
The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens itmore »
- Authors:
-
- Monash Univ., Clayton, VIC (Australia)
- Monash Univ., Clayton, VIC (Australia); Australian Synchrotron, Clayton, VIC (Australia)
- Singapore Univ. of Technology and Design (Singapore)
- National Univ. of Singapore (Singapore); Univ. of Illinois, Urbana-Champaign, IL (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Korea Inst. of Science and Technology, Seoul (Korea)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- National Univ. of Singapore (Singapore); Yale-NUS College (Singapore)
- Singapore Univ. of Technology and Design (Singapore); Nanjing Normal Univ., Nanjing (China)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1542347
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature (London)
- Additional Journal Information:
- Journal Name: Nature (London); Journal Volume: 564; Journal Issue: 7736; Journal ID: ISSN 0028-0836
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Collins, James L., Tadich, Anton, Wu, Weikang, Gomes, Lidia C., Rodrigues, Joao N. B., Liu, Chang, Hellerstedt, Jack, Ryu, Hyejin, Tang, Shujie, Mo, Sung-Kwan, Adam, Shaffique, Yang, Shengyuan A., Fuhrer, Michael S., and Edmonds, Mark T. Electric-field-tuned topological phase transition in ultrathin Na3Bi. United States: N. p., 2018.
Web. doi:10.1038/s41586-018-0788-5.
Collins, James L., Tadich, Anton, Wu, Weikang, Gomes, Lidia C., Rodrigues, Joao N. B., Liu, Chang, Hellerstedt, Jack, Ryu, Hyejin, Tang, Shujie, Mo, Sung-Kwan, Adam, Shaffique, Yang, Shengyuan A., Fuhrer, Michael S., & Edmonds, Mark T. Electric-field-tuned topological phase transition in ultrathin Na3Bi. United States. https://doi.org/10.1038/s41586-018-0788-5
Collins, James L., Tadich, Anton, Wu, Weikang, Gomes, Lidia C., Rodrigues, Joao N. B., Liu, Chang, Hellerstedt, Jack, Ryu, Hyejin, Tang, Shujie, Mo, Sung-Kwan, Adam, Shaffique, Yang, Shengyuan A., Fuhrer, Michael S., and Edmonds, Mark T. Mon .
"Electric-field-tuned topological phase transition in ultrathin Na3Bi". United States. https://doi.org/10.1038/s41586-018-0788-5. https://www.osti.gov/servlets/purl/1542347.
@article{osti_1542347,
title = {Electric-field-tuned topological phase transition in ultrathin Na3Bi},
author = {Collins, James L. and Tadich, Anton and Wu, Weikang and Gomes, Lidia C. and Rodrigues, Joao N. B. and Liu, Chang and Hellerstedt, Jack and Ryu, Hyejin and Tang, Shujie and Mo, Sung-Kwan and Adam, Shaffique and Yang, Shengyuan A. and Fuhrer, Michael S. and Edmonds, Mark T.},
abstractNote = {The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal Na3Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na3Bi is suitable for room-temperature topological transistor operation.},
doi = {10.1038/s41586-018-0788-5},
journal = {Nature (London)},
number = 7736,
volume = 564,
place = {United States},
year = {Mon Dec 10 00:00:00 EST 2018},
month = {Mon Dec 10 00:00:00 EST 2018}
}
Web of Science
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