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Title: Super Large Sn1–xSe Single Crystals with Excellent Thermoelectric Performance

Journal Article · · ACS Applied Materials and Interfaces
 [1]; ORCiD logo [2]; ORCiD logo [3];  [2]; ORCiD logo [4];  [3];  [5];  [6];  [4]; ORCiD logo [7]; ORCiD logo [8]
  1. Shanghai Dianji Univ., Shanghai (China). College of Materials; Chinese Academy of Sciences (CAS), Ningbo (China). Ningbo Inst. of Materials Technology and Engineering
  2. Univ. of Queensland, Brisbane (Australia). Materials Engineering
  3. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
  4. Univ. of Wollongong, Wollongon (Australia). Australian Inst. for Innovative Materials (AIIM), Inst. for Superconducting and Electronic Materials (ISEM)
  5. Chinese Academy of Sciences (CAS), Ningbo (China). Ningbo Inst. of Materials Technology and Engineering
  6. Shanghai Dianji Univ., Shanghai (China). College of Materials
  7. Univ. of Queensland, Brisbane (Australia). Materials Engineering and Centre for Microscopy and Microanalysis
  8. Univ. of Queensland, Brisbane (Australia). Materials Engineering; Univ. of Southern Queensland, Springfield (Australia). Centre for Future Materials
+ Show Author Affiliations

SnSe single crystals have drawn extensive attention for their ultralow thermal conductivity and outstanding thermoelectric performance. In our paper, we report super large Sn1–xSe single crystals with excellent thermoelectric properties, fabricated via an advanced horizontal Bridgman technique with great yield and high reproducibility. The obtained single crystals have a super large size of ~70 × 50 × 15 mm with a considerable weight of 148 g, which leads to a record-high mass density of >6.1 g cm–3. Extensive chemical characterization demonstrates that ~0.3% Sn vacancies are present, which results in a large concentration of holes, ~1.2 × 1019 cm–3, and an enhanced power factor of ~6.1 μW cm–1 K–2 at 793 K. Simultaneously, the Sn-vacancy-induced lattice distortions result in a low thermal conductivity of ~0.39 W m–1 K–1 at 793 K, leading to a competitive ZT of ~1.24. This work demonstrates that large-size off-stoichiometric SnSe single crystals hold promise to achieve high thermoelectric performance.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Project
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
FG02-09ER46554; AC02-05CH11231
OSTI ID:
1542275
Journal Information:
ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 8 Vol. 11; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (3)

High‐Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges journal February 2020
Optimization of sodium hydroxide for securing high thermoelectric performance in polycrystalline Sn 1 − x Se via anisotropy and vacancy synergy journal December 2019
Pressure-induced enhancement of thermoelectric power factor in pristine and hole-doped SnSe crystals journal January 2019

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