Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Ireland, R.  M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N.  P.; Katz, H.  E.

doi:10.1103/physrevapplied.9.044003

Title: Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Journal Article · 04 April 2018 · Physical Review Applied

DOI: https://doi.org/10.1103/physrevapplied.9.044003 · OSTI ID:1540704

Ireland, R. M. ^[1]; Wu, Liang ^[2]; Salehi, M. ^[3]; Oh, S. ^[4]; Armitage, N. P. ^[2]; Katz, H. E. ^[5]

Johns Hopkins Univ., Baltimore, MD (United States). Dept. of Materials Science and Engineering; Johns Hopkins Univ., Baltimore, MD (United States). Dept. of Chemistry; DOE/OSTI
Johns Hopkins Univ., Baltimore, MD (United States). Dept. of Physics and Astronomy
Rutgers Univ., Piscataway, NJ (United States). Dept. of Material Science and Engineering
Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
Johns Hopkins Univ., Baltimore, MD (United States). Dept. of Materials Science and Engineering; Johns Hopkins Univ., Baltimore, MD (United States). Dept. of Chemistry

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) B_i2Se₃ by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of B_i2Se₃ is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm²/Vs at 5 K.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Johns Hopkins Univ., Baltimore, MD (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: FG02-07ER46465

OSTI ID:: 1540704

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 9; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (34)

Influence of physical aging on the performance of corona-charged amorphous polymer electrets Erhard, Dominik P.; Lovera, Deliani; Giesa, Reiner Journal of Polymer Science Part B: Polymer Physics, Vol. 48, Issue 9 https://doi.org/10.1002/polb.21987	journal	May 2010
Full-swing organic inverters using a charged perfluorinated electret fabricated by means of mass-printing technologies Reuter, K.; Kempa, H.; Deshmukh, K. D. Organic Electronics, Vol. 11, Issue 1 https://doi.org/10.1016/j.orgel.2009.10.004	journal	January 2010
Synthesis, Fabrication, and Heterostructure of Charged, Substituted Polystyrene Multilayer Dielectrics and Their Effects in Pentacene Transistors Alley, Olivia J.; Plunkett, Evan; Kale, Tejaswini S. Macromolecules, Vol. 49, Issue 9 https://doi.org/10.1021/acs.macromol.6b00253	journal	April 2016
Controlling the Spin Texture of Topological Insulators by Rational Design of Organic Molecules Jakobs, Sebastian; Narayan, Awadhesh; Stadtmüller, Benjamin Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02213	journal	August 2015
Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering Koirala, Nikesh; Brahlek, Matthew; Salehi, Maryam Nano Letters, Vol. 15, Issue 12 https://doi.org/10.1021/acs.nanolett.5b03770	journal	November 2015
Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi ₂ Te ₃ Yuan, Hongtao; Liu, Hongwen; Shimotani, Hidekazu Nano Letters, Vol. 11, Issue 7 https://doi.org/10.1021/nl201561u	journal	July 2011
Simultaneous Electrical-Field-Effect Modulation of Both Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators Chang, Cui-Zu; Zhang, Zuocheng; Li, Kang Nano Letters, Vol. 15, Issue 2 https://doi.org/10.1021/nl504047c	journal	January 2015
Visualizing and Quantifying Charge Distributions Correlated to Threshold Voltage Shifts in Lateral Organic Transistors Dawidczyk, Thomas J.; Martínez Hardigree, Josué F.; Johns, Gary L. ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn4064067	journal	February 2014
A topological Dirac insulator in a quantum spin Hall phase Hsieh, D.; Qian, D.; Wray, L. Nature, Vol. 452, Issue 7190, p. 970-974 https://doi.org/10.1038/nature06843	journal	April 2008
A tunable topological insulator in the spin helical Dirac transport regime Hsieh, D.; Xia, Y.; Qian, D. Nature, Vol. 460, Issue 7259 https://doi.org/10.1038/nature08234	journal	July 2009
Spintronics and pseudospintronics in graphene and topological insulators Pesin, Dmytro; MacDonald, Allan H. Nature Materials, Vol. 11, Issue 5 https://doi.org/10.1038/nmat3305	journal	April 2012
Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 Kim, Dohun; Cho, Sungjae; Butch, Nicholas P. Nature Physics, Vol. 8, Issue 6 https://doi.org/10.1038/nphys2286	journal	April 2012
A sudden collapse in the transport lifetime across the topological phase transition in (Bi1−xInx)2Se3 Wu, Liang; Brahlek, M.; Valdés Aguilar, R. Nature Physics, Vol. 9, Issue 7 https://doi.org/10.1038/nphys2647	journal	June 2013
Surface versus bulk state in topological insulator Bi ₂ Se ₃ under environmental disorder Brahlek, Matthew; Kim, Yong Seung; Bansal, Namrata Applied Physics Letters, Vol. 99, Issue 1 https://doi.org/10.1063/1.3607484	journal	July 2011
Kelvin probe microscopic visualization of charge storage at polystyrene interfaces with pentacene and gold Dawidczyk, T. J.; Johns, G. L.; Ozgun, R. Applied Physics Letters, Vol. 100, Issue 7 https://doi.org/10.1063/1.3684977	journal	February 2012
Aging and reduced bulk conductance in thin films of the topological insulator Bi ₂ Se ₃ Valdés Aguilar, R.; Wu, L.; Stier, A. V. Journal of Applied Physics, Vol. 113, Issue 15 https://doi.org/10.1063/1.4801911	journal	April 2013
Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge Lartsev, Arseniy; Yager, Tom; Bergsten, Tobias Applied Physics Letters, Vol. 105, Issue 6 https://doi.org/10.1063/1.4892922	journal	August 2014
Tuning and stabilizing topological insulator Bi ₂ Se ₃ in the intrinsic regime by charge extraction with organic overlayers Wu, Liang; Ireland, R. M.; Salehi, M. Applied Physics Letters, Vol. 108, Issue 22 https://doi.org/10.1063/1.4952733	journal	May 2016
Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements Analytis, James G.; Chu, Jiun-Haw; Chen, Yulin Physical Review B, Vol. 81, Issue 20 https://doi.org/10.1103/PhysRevB.81.205407	journal	May 2010
Gate control of surface transport in MBE-grown topological insulator (Bi 1 − x Sb x ) 2 Te 3 thin films Shimizu, Sunao; Yoshimi, Ryutaro; Hatano, Takafumi Physical Review B, Vol. 86, Issue 4 https://doi.org/10.1103/PhysRevB.86.045319	journal	July 2012
Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid Segawa, Kouji; Ren, Zhi; Sasaki, Satoshi Physical Review B, Vol. 86, Issue 7 https://doi.org/10.1103/PhysRevB.86.075306	journal	August 2012
Doping of Bi 2 Te 3 using electron irradiation Rischau, C. W.; Leridon, B.; Fauqué, B. Physical Review B, Vol. 88, Issue 20 https://doi.org/10.1103/PhysRevB.88.205207	journal	November 2013
Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi 2 Se 3 Chen, J.; Qin, H. J.; Yang, F. Physical Review Letters, Vol. 105, Issue 17 https://doi.org/10.1103/PhysRevLett.105.176602	journal	October 2010
Fractional Topological Insulators in Three Dimensions Maciejko, Joseph; Qi, Xiao-Liang; Karch, Andreas Physical Review Letters, Vol. 105, Issue 24 https://doi.org/10.1103/PhysRevLett.105.246809	journal	December 2010
Terahertz Response and Colossal Kerr Rotation from the Surface States of the Topological Insulator Bi 2 Se 3 Valdés Aguilar, R.; Stier, A. V.; Liu, W. Physical Review Letters, Vol. 108, Issue 8 https://doi.org/10.1103/PhysRevLett.108.087403	journal	February 2012
Thickness-Independent Transport Channels in Topological Insulator Bi 2 Se 3 Thin Films Bansal, Namrata; Kim, Yong Seung; Brahlek, Matthew Physical Review Letters, Vol. 109, Issue 11 https://doi.org/10.1103/PhysRevLett.109.116804	journal	September 2012
High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu 0.02 Bi 2 Se 3 Wu, Liang; Tse, Wang-Kong; Brahlek, M. Physical Review Letters, Vol. 115, Issue 21 https://doi.org/10.1103/PhysRevLett.115.217602	journal	November 2015
Colloquium: Topological insulators Hasan, M. Z.; Kane, C. L. Reviews of Modern Physics, Vol. 82, Issue 4, p. 3045-3067 https://doi.org/10.1103/RevModPhys.82.3045	journal	November 2010
Topological insulators and superconductors Qi, Xiao-Liang; Zhang, Shou-Cheng Reviews of Modern Physics, Vol. 83, Issue 4 https://doi.org/10.1103/RevModPhys.83.1057	journal	October 2011
Inducing a Magnetic Monopole with Topological Surface States Qi, X. -L.; Li, R.; Zang, J. Science, Vol. 323, Issue 5918 https://doi.org/10.1126/science.1167747	journal	February 2009
Experimental Realization of a Three-Dimensional Topological Insulator, Bi₂Te₃ Chen, Y. L.; Analytis, J. G.; Chu, J.-H. Science, Vol. 325, Issue 5937, p. 178-181 https://doi.org/10.1126/science.1173034	journal	June 2009
Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator Wu, L.; Salehi, M.; Koirala, N. Science, Vol. 354, Issue 6316 https://doi.org/10.1126/science.aaf5541	journal	December 2016
Three-Dimensional Topological Insulators Hasan, M. Zahid; Moore, Joel E. Annual Review of Condensed Matter Physics, Vol. 2, Issue 1 https://doi.org/10.1146/annurev-conmatphys-062910-140432	journal	March 2011
Corona charging of polymers: recent advances on constant current charging Giacometti, José A.; Fedosov, Sergei; Costa, Mauro M. Brazilian Journal of Physics, Vol. 29, Issue 2 https://doi.org/10.1590/S0103-97331999000200009	journal	January 1999

Similar Records

Demonstration of large field effect in topological insulator films via a high-κ back gate

Journal Article · 2016 · Applied Physics Letters · OSTI ID:22591736

Wang, C. Y.; Lin, H. Y.; Yang, S. R.; +7 more

Tuning and stabilizing topological insulator Bi{sub 2}Se{sub 3} in the intrinsic regime by charge extraction with organic overlayers

Journal Article · 2016 · Applied Physics Letters · OSTI ID:22590725

Wu, Liang; Cheng, B.; Ireland, R. M.; +3 more

Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

Journal Article · 2014 · Physical Review Letters · OSTI ID:1184091

Fatemi, Valla; Hunt, Benjamin; Steinberg, Hadar; +8 more

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
Physics

Title: Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

Citation Formats

References (34)

Similar Records

Related Subjects