Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Wang, Leizhi; Yin, Ming; Khan, Asif; Muhtadi, Sakib; Asif, Fatima; Choi, Eun Sang; Datta, Timir

doi:10.1103/physrevapplied.9.024006

Title: Scatterings and Quantum Effects in $(Al, In) N / GaN$ Heterostructures for High-Power and High-Frequency Electronics

Abstract

Charge transport in the wide-band-gap $(Al, In) N / GaN$ heterostructures with high carrier density approximately $2 \times 10^{13} {cm}^{- 2}$ is investigated over a large range of temperature ( $270 mK \leq T \leq 280 K$ ) and magnetic field ( $0 \leq B \leq 18 T$ ). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov–de Haas (SdH) oscillations a relatively light effective mass of $0.23 m_{e}$ is determined. Furthermore, the linear dependence with temperature ( $T < 20 K$ ) of the inelastic scattering rate ( $τ_{i}^{- 1} \propto T$ ) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time $(τ_{q} / τ_{t} < 1)$ is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Furthermore, suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.

Authors:

Wang, Leizhi ^[1]; Yin, Ming ^[2]; Khan, Asif ^[1]; Muhtadi, Sakib ^[1]; Asif, Fatima ^[1]; Choi, Eun Sang ^[3]; Datta, Timir ^[1]

Univ. of South Carolina, Columbia, SC (United States)
Benedict College, Columbia, SC (United States)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)

Publication Date:: Wed Feb 07 00:00:00 EST 2018

Research Org.:: Florida A & M University, Tallahassee, FL (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

OSTI Identifier:: 1540701

Alternate Identifier(s):: OSTI ID: 1419829

Grant/Contract Number:: NA0002630; DMR-1157490

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 9; Journal Issue: 2; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; quantum transport; Shubnikov-de Haas effect; transport phenomena; weak localization; devices; heterostructures; III-V semiconductors; two-dimensional electron gas

Citation Formats


                    Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, and Datta, Timir. Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics.  United States: N. p., 2018. 
Web.  doi:10.1103/physrevapplied.9.024006.

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                    Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, & Datta, Timir. Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics.  United States.  https://doi.org/10.1103/physrevapplied.9.024006

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                    Wang, Leizhi, Yin, Ming, Khan, Asif, Muhtadi, Sakib, Asif, Fatima, Choi, Eun Sang, and Datta, Timir. Wed .  
"Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics".  United States.  https://doi.org/10.1103/physrevapplied.9.024006.  https://www.osti.gov/servlets/purl/1540701.

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@article{osti_1540701,

  title        = {Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics},

  author       = {Wang, Leizhi and Yin, Ming and Khan, Asif and Muhtadi, Sakib and Asif, Fatima and Choi, Eun Sang and Datta, Timir},

  abstractNote = {Charge transport in the wide-band-gap (Al,In)N/GaN heterostructures with high carrier density approximately 2×1013 cm-2 is investigated over a large range of temperature (270 mK≤T≤280 K) and magnetic field (0≤B≤18 T). We observe the first evidence of weak localization in the two-dimensional electron gas in this system. From the Shubnikov–de Haas (SdH) oscillations a relatively light effective mass of 0.23me is determined. Furthermore, the linear dependence with temperature (T<20 K) of the inelastic scattering rate (τi-1∝T) is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less-than unit ratio of quantum lifetime to Hall transport time (τq/τt<1) is taken to signify the dominance of small-angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Furthermore, suppression of such scatterings will lead to higher mobility and a way forward to high-power and high-frequency electronics.},

  doi          = {10.1103/physrevapplied.9.024006},

  journal      = {Physical Review Applied},

  number       = 2,

  volume       = 9,

  place        = {United States},

  year         = {Wed Feb 07 00:00:00 EST 2018},

  month        = {Wed Feb 07 00:00:00 EST 2018}

}

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Title: Scatterings and Quantum Effects in ( Al , In ) N / GaN Heterostructures for High-Power and High-Frequency Electronics

Abstract

Citation Formats

Two-Dimensional Quantum Oscillations of the Conductance at LaAlO3/SrTiO3Interfaces journal, December 2010

Weak localization in high-quality two-dimensional systems journal, December 2004

Experimental comparison of the phase-breaking lengths in weak localization and universal conductance fluctuations journal, August 1999

Current status of AlInN layers lattice-matched to GaN for photonics and electronics journal, October 2007

Magnetoconductance and weak localization in silicon inversion layers journal, October 1981

Linear magnetoresistance in three-dimensional carbon nanostructure with periodic spherical voids journal, July 2015

Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys journal, April 2016

Measurements of the Density-Dependent Many-Body Electron Mass in Two Dimensional G a A s / A l G a A s Heterostructures journal, January 2005

Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures journal, February 2012

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method journal, July 2010

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3 journal, July 2010

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System journal, February 1980

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates journal, October 2000

Weak localization and magnetointersubband scattering effects in an Al x Ga 1 − x N / G a N two-dimensional electron gas journal, March 2004

Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate journal, March 2014

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures journal, January 2009

Strong spin-orbit interactions and weak antilocalization in carbon-doped p -type Ga As ∕ Al x Ga 1 − x As heterostructures journal, March 2008

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements journal, July 2004

Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor journal, June 2005

Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures journal, September 2016

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors journal, December 2009

Weak Localization in Graphene Flakes journal, February 2008

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements journal, July 2000

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures journal, April 2015

Dephasing time and one-dimensional localization of two-dimensional electrons in GaAs / Al x Ga 1 − x As heterostructures journal, November 1987

Power electronics on InAlN/(In)GaN: Prospect for a record performance journal, November 2001

Shubnikov–De Haas Oscillations in SrTiO3/LaAlO3 Interface journal, November 2010

Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene journal, February 2017

Magnetotransport properties of lattice-matched In0.18Al0.82N/AlN/GaN heterostructures journal, January 2011

Small-angle scattering in two-dimensional electron gases journal, August 1991

Unusual semimetallic behavior of carbonized ion-implanted polymers journal, August 1998

Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped Bi 2 Se 3 : Evidence for Layered Transport of Bulk Carriers journal, May 2012

Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder journal, June 2010

Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas journal, November 2004

Quantum Coherence at Low Temperatures in Mesoscopic Systems: Effect of Disorder text, January 2009

Quantum transport properties of monolayer graphene with antidot lattice journal, August 2019

Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure journal, October 2019

Title: Scatterings and Quantum Effects in $(Al, In) N / GaN$ Heterostructures for High-Power and High-Frequency Electronics

Two-Dimensional Quantum Oscillations of the Conductance at ${LaAlO}_{3} / {SrTiO}_{3}$ Interfaces
journal, December 2010

Weak localization in high-quality two-dimensional systems
journal, December 2004

Experimental comparison of the phase-breaking lengths in weak localization and universal conductance fluctuations
journal, August 1999

Current status of AlInN layers lattice-matched to GaN for photonics and electronics
journal, October 2007

Magnetoconductance and weak localization in silicon inversion layers
journal, October 1981

Linear magnetoresistance in three-dimensional carbon nanostructure with periodic spherical voids
journal, July 2015

Band gaps and built-in electric fields in InAlN/GaN short period superlattices: Comparison with (InAlGa)N quaternary alloys
journal, April 2016

Measurements of the Density-Dependent Many-Body Electron Mass in Two Dimensional $G a A s / A l G a A s$ Heterostructures
journal, January 2005

Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures
journal, February 2012

Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
journal, July 2010

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi₂Te₃
journal, July 2010

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
journal, October 2000

Weak localization and magnetointersubband scattering effects in an ${Al}_{x} {Ga}_{1 - x} N / G a N$ two-dimensional electron gas
journal, March 2004

Transport properties of SiO ₂ /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate
journal, March 2014

Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures
journal, January 2009

Strong spin-orbit interactions and weak antilocalization in carbon-doped $p$ -type $Ga As ∕ {Al}_{x} {Ga}_{1 - x} As$ heterostructures
journal, March 2008

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements
journal, July 2004

Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor
journal, June 2005

Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures
journal, September 2016

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
journal, December 2009

Weak Localization in Graphene Flakes
journal, February 2008

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements
journal, July 2000

Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures
journal, April 2015

Dephasing time and one-dimensional localization of two-dimensional electrons in $GaAs / {Al}_{x} {Ga}_{1 - x} As$ heterostructures
journal, November 1987

Power electronics on InAlN/(In)GaN: Prospect for a record performance
journal, November 2001

Shubnikov–De Haas Oscillations in ${SrTiO}_{3} / {LaAlO}_{3}$ Interface
journal, November 2010

Robust Two-Dimensional Electronic Properties in Three-Dimensional Microstructures of Rotationally Stacked Turbostratic Graphene
journal, February 2017

Magnetotransport properties of lattice-matched In0.18Al0.82N/AlN/GaN heterostructures
journal, January 2011

Small-angle scattering in two-dimensional electron gases
journal, August 1991

Unusual semimetallic behavior of carbonized ion-implanted polymers
journal, August 1998

Quantized Hall Effect and Shubnikov–de Haas Oscillations in Highly Doped ${Bi}_{2} {Se}_{3}$ : Evidence for Layered Transport of Bulk Carriers
journal, May 2012

Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder
journal, June 2010

Quantum and transport lifetimes in a tunable low-density AlGaN∕GaN two-dimensional electron gas
journal, November 2004

Quantum Coherence at Low Temperatures in Mesoscopic Systems: Effect of Disorder
text, January 2009

Quantum transport properties of monolayer graphene with antidot lattice
journal, August 2019

Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure
journal, October 2019