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Title: Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes

Abstract

The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m−1 K−1 and 196 W m−1 K−1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m−1 K−1 and 224 W m−1 K−1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.

Authors:
 [1]; ORCiD logo [1];  [2];  [2];  [3];  [3];  [1];  [1];  [1]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
  2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
  3. Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
Publication Date:
Research Org.:
Adroit Materials, Cary, NC (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540253
Alternate Identifier(s):
OSTI ID: 1469744
Grant/Contract Number:  
SC0011883
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, and Sitar, Zlatko. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. United States: N. p., 2018. Web. doi:10.1063/1.5047531.
Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, & Sitar, Zlatko. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes. United States. doi:10.1063/1.5047531.
Rounds, Robert, Sarkar, Biplab, Sochacki, Tomasz, Bockowski, Michal, Imanishi, Masayuki, Mori, Yusuke, Kirste, Ronny, Collazo, Ramón, and Sitar, Zlatko. Fri . "Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes". United States. doi:10.1063/1.5047531.
@article{osti_1540253,
title = {Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes},
author = {Rounds, Robert and Sarkar, Biplab and Sochacki, Tomasz and Bockowski, Michal and Imanishi, Masayuki and Mori, Yusuke and Kirste, Ronny and Collazo, Ramón and Sitar, Zlatko},
abstractNote = {The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m−1 K−1 and 196 W m−1 K−1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m−1 K−1 and 224 W m−1 K−1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.},
doi = {10.1063/1.5047531},
journal = {Journal of Applied Physics},
number = 10,
volume = 124,
place = {United States},
year = {2018},
month = {9}
}

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Works referenced in this record:

Thermal conductivity of GaN crystals grown by high pressure method
journal, November 2003

  • Jeżowski, A.; Stachowiak, P.; Plackowski, T.
  • physica status solidi (b), Vol. 240, Issue 2, p. 447-450
  • DOI: 10.1002/pssb.200303341

Some effects of oxygen impurities on AlN and GaN
journal, December 2002

  • Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald
  • Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298
  • DOI: 10.1016/S0022-0248(02)01753-0