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Title: Dislocation baskets in thick In xGa 1–xN epilayers

Abstract

Dislocation clusters have been observed in thick In xGa 1–xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due to the difference in indium content between the baskets and the surrounding matrix. The interior of the base of the baskets reflects no observable dislocations connecting the threading dislocations, and often no net displacements like those due to stacking faults. We believe that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. And when the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors add up to a lattice vector, or equivalently to no change in the stacking sequence, which is consistent with our observations.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [2]; ORCiD logo [1]
  1. Arizona State Univ., Tempe, AZ (United States)
  2. PhotoNitride Devices, Inc., Tempe, AZ (United States)
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)
OSTI Identifier:
1540240
Alternate Identifier(s):
OSTI ID: 1469438
Grant/Contract Number:  
AR0000470
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Shuo, Xie, Hongen, Liu, Hanxiao, Fischer, Alec M., McFavilen, Heather, and Ponce, Fernando A. Dislocation baskets in thick In xGa1–xN epilayers. United States: N. p., 2018. Web. doi:10.1063/1.5042079.
Wang, Shuo, Xie, Hongen, Liu, Hanxiao, Fischer, Alec M., McFavilen, Heather, & Ponce, Fernando A. Dislocation baskets in thick In xGa1–xN epilayers. United States. doi:10.1063/1.5042079.
Wang, Shuo, Xie, Hongen, Liu, Hanxiao, Fischer, Alec M., McFavilen, Heather, and Ponce, Fernando A. Tue . "Dislocation baskets in thick In xGa1–xN epilayers". United States. doi:10.1063/1.5042079. https://www.osti.gov/servlets/purl/1540240.
@article{osti_1540240,
title = {Dislocation baskets in thick In xGa1–xN epilayers},
author = {Wang, Shuo and Xie, Hongen and Liu, Hanxiao and Fischer, Alec M. and McFavilen, Heather and Ponce, Fernando A.},
abstractNote = {Dislocation clusters have been observed in thick In xGa1–xN films with 0.07 ≤ x ≤ 0.12. The clusters resemble baskets with a higher indium content at their interior. Threading dislocations at the basket boundaries are of the misfit edge type, and their separation is consistent with misfit strain relaxation due to the difference in indium content between the baskets and the surrounding matrix. The interior of the base of the baskets reflects no observable dislocations connecting the threading dislocations, and often no net displacements like those due to stacking faults. We believe that the origin of these threading dislocation arrays is associated with misfit dislocations at the basal plane that dissociate, forming stacking faults. And when the stacking faults form simultaneously satisfying the crystal symmetry, the sum of their translation vectors add up to a lattice vector, or equivalently to no change in the stacking sequence, which is consistent with our observations.},
doi = {10.1063/1.5042079},
journal = {Journal of Applied Physics},
number = 10,
volume = 124,
place = {United States},
year = {2018},
month = {9}
}

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