Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion
Abstract
The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is due to the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (~3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Importantly, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The approach invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.
- Authors:
-
- Korea Univ., Seoul (South Korea); Univ. of Florida, Gainesville, FL (United States)
- Korea Inst. of Science and Technology (KIST), Seoul (South Korea)
- Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
- SK Hynix Inc., Icheon (South Korea)
- Korea Univ., Seoul (South Korea)
- Univ. of Florida, Gainesville, FL (United States)
- Publication Date:
- Research Org.:
- Sinmat, Inc., Gainesville, FL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF)
- OSTI Identifier:
- 1540211
- Alternate Identifier(s):
- OSTI ID: 1438071
- Grant/Contract Number:
- SC0006438; SC0007740; DMR-1644779
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 21; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kim, Jong Cheol, Kim, Jongsik, Xin, Yan, Lee, Jinhyung, Kim, Young-Gyun, Subhash, Ghatu, Singh, Rajiv K., Arjunan, Arul C., and Lee, Haigun. Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion. United States: N. p., 2018.
Web. doi:10.1063/1.5030580.
Kim, Jong Cheol, Kim, Jongsik, Xin, Yan, Lee, Jinhyung, Kim, Young-Gyun, Subhash, Ghatu, Singh, Rajiv K., Arjunan, Arul C., & Lee, Haigun. Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion. United States. https://doi.org/10.1063/1.5030580
Kim, Jong Cheol, Kim, Jongsik, Xin, Yan, Lee, Jinhyung, Kim, Young-Gyun, Subhash, Ghatu, Singh, Rajiv K., Arjunan, Arul C., and Lee, Haigun. Mon .
"Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion". United States. https://doi.org/10.1063/1.5030580. https://www.osti.gov/servlets/purl/1540211.
@article{osti_1540211,
title = {Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion},
author = {Kim, Jong Cheol and Kim, Jongsik and Xin, Yan and Lee, Jinhyung and Kim, Young-Gyun and Subhash, Ghatu and Singh, Rajiv K. and Arjunan, Arul C. and Lee, Haigun},
abstractNote = {The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is due to the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (~3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Importantly, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The approach invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.},
doi = {10.1063/1.5030580},
journal = {Applied Physics Letters},
number = 21,
volume = 112,
place = {United States},
year = {Mon May 21 00:00:00 EDT 2018},
month = {Mon May 21 00:00:00 EDT 2018}
}
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