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Title: Electronic structure of epitaxial half-Heusler Co 1-xNi xTiSb across the semiconductor to metal transition

Abstract

In this paper, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co 1-xNi xTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. Finally, an electron pocket is observed below the Fermi level at the bulk X point for compositions x > 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. Univ. of California, Santa Barbara, CA (United States)
  2. Lund Univ. (Sweden)
Publication Date:
Research Org.:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540210
Alternate Identifier(s):
OSTI ID: 1467945
Grant/Contract Number:  
SC0014388
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Harrington, S. D., Logan, J. A., Chatterjee, S., Patel, S. J., Rice, A. D., Feldman, M. M., Polley, C. M., Balasubramanian, T., Mikkelsen, A., and Palmstrøm, C. J. Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition. United States: N. p., 2018. Web. doi:10.1063/1.5030553.
Harrington, S. D., Logan, J. A., Chatterjee, S., Patel, S. J., Rice, A. D., Feldman, M. M., Polley, C. M., Balasubramanian, T., Mikkelsen, A., & Palmstrøm, C. J. Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition. United States. doi:10.1063/1.5030553.
Harrington, S. D., Logan, J. A., Chatterjee, S., Patel, S. J., Rice, A. D., Feldman, M. M., Polley, C. M., Balasubramanian, T., Mikkelsen, A., and Palmstrøm, C. J. Fri . "Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition". United States. doi:10.1063/1.5030553. https://www.osti.gov/servlets/purl/1540210.
@article{osti_1540210,
title = {Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition},
author = {Harrington, S. D. and Logan, J. A. and Chatterjee, S. and Patel, S. J. and Rice, A. D. and Feldman, M. M. and Polley, C. M. and Balasubramanian, T. and Mikkelsen, A. and Palmstrøm, C. J.},
abstractNote = {In this paper, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co1-xNixTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. Finally, an electron pocket is observed below the Fermi level at the bulk X point for compositions x > 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.},
doi = {10.1063/1.5030553},
journal = {Applied Physics Letters},
number = 9,
volume = 113,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: RHEED patterns of Co1-xNixTiSb for x=0.1, x=0.5, and x= 0.88 along the [110], [010], and [ 110] azimuths. A clear (2 x 1) surface reconstruction is observed for x= 0.1 and 0.5, while a (2 x 2) can be seen in x=0.88.

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