Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition

Harrington, S. D.; Logan, J. A.; Chatterjee, S.; Patel, S. J.; Rice, A. D.; Feldman, M. M.; Polley, C. M.; Balasubramanian, T.; Mikkelsen, A.; Palmstrøm, C. J.

doi:10.1063/1.5030553

Title: Electronic structure of epitaxial half-Heusler Co_1-xNi_xTiSb across the semiconductor to metal transition

Journal Article · 31 August 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5030553 · OSTI ID:1540210

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^[1]; Chatterjee, S. ^[1];

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^[1]; Feldman, M. M. ^[1]; Polley, C. M. ^[2]; Balasubramanian, T. ^[2]; Mikkelsen, A. ^[2];

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Univ. of California, Santa Barbara, CA (United States)
Lund Univ. (Sweden)

In this paper, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co_1-xNi_xTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. Finally, an electron pocket is observed below the Fermi level at the bulk X point for compositions x > 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0014388

OSTI ID:: 1540210

Alternate ID(s):: OSTI ID: 1467945

Journal Information:: Applied Physics Letters, Vol. 113, Issue 9; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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