skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

This content will become publicly available on August 28, 2019

Title: Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon

Abstract

In this work, we investigate the electronic transport properties of a graphene allotrope composed of 5–6-7 carbon aromatic rings called phagraphene and compare with the results of the transition-voltage spectroscopy (TVS) and propose the behavior at low voltage characteristic of a topological insulator. Phagraphene properties were compared to those of graphene in a zigzag nanoribbon configuration, zigzag graphene vs zigzag phagraphene nanoribbon (zzGNR and zzPGNR). The molecular geometry and the electronic properties were calculated by density functional theory (DFT) without spin, and the electronic transport and TVS were obtained by means of DFT combined with non-equilibrium Green´s function when we couple the optimized geometry of zzGNR and zzPGNR to the leads (left and right), forming the molecular junction that will be subjected to the action of an external bias voltage (Ve) to generate the molecular device. The results exhibit (i) a metal-insulator transition when Ve is increased until Ve = 1.4 V which corresponds to the nonlinear region (resonance), showing the field effect transistor behaviour for zzGNR junctions; and (ii) two nonlinear regions (two negative differential resistances), showing a resonant tunnel diode behaviour with two operation windows (Ve = 0.5 V and Ve = 1.7 V) for the zzPGNR junction. In addition, the zzPGNR junction exhibitsmore » topological insulator characteristics upon introducing topological defects such as pentagons and heptagons in the hexagonal lattice of graphene, and when Ve = 1.7 V, there occurs a topological insulator-metal transition that can be seen in the behaviour of the density of states, transmittance, and frontier molecular orbitals with Ve.« less

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [3]; ORCiD logo [5];  [6]; ORCiD logo [5]
  1. Faculdade de Física, Universidade Federal do Pará, Ananindeua 67113-901, Brazil
  2. Programa de Pós-Graduação em Física, Universidade Federal do Pará, Belém 66075-110, Brazil
  3. Programa de Pós-Graduação em Engenharia Elétrica, Universidade Federal do Pará, Belém 66075-110, Brazil
  4. Faculdade de Engenharia de Materiais, Universidade Federal do Pará, Ananindeua 67113-901, Brazil
  5. Department of Physics and Quantum Theory Project, University of Florida, Gainesville, Florida 32611, USA
  6. Faculdade de Física, Universidade Federal do Pará, Belém 66075-110, Brazil
Publication Date:
Research Org.:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540206
Grant/Contract Number:  
FG02-02ER45995
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

da Silva, C. A. B., Côrrea, S. M., dos Santos, J. C. da S., Nisioka, K. R., Moura-Moreira, M., Wang, Y. -P., Del Nero, J., and Cheng, H. -P. Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon. United States: N. p., 2018. Web. doi:10.1063/1.5029845.
da Silva, C. A. B., Côrrea, S. M., dos Santos, J. C. da S., Nisioka, K. R., Moura-Moreira, M., Wang, Y. -P., Del Nero, J., & Cheng, H. -P. Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon. United States. doi:10.1063/1.5029845.
da Silva, C. A. B., Côrrea, S. M., dos Santos, J. C. da S., Nisioka, K. R., Moura-Moreira, M., Wang, Y. -P., Del Nero, J., and Cheng, H. -P. Tue . "Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon". United States. doi:10.1063/1.5029845.
@article{osti_1540206,
title = {Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon},
author = {da Silva, C. A. B. and Côrrea, S. M. and dos Santos, J. C. da S. and Nisioka, K. R. and Moura-Moreira, M. and Wang, Y. -P. and Del Nero, J. and Cheng, H. -P.},
abstractNote = {In this work, we investigate the electronic transport properties of a graphene allotrope composed of 5–6-7 carbon aromatic rings called phagraphene and compare with the results of the transition-voltage spectroscopy (TVS) and propose the behavior at low voltage characteristic of a topological insulator. Phagraphene properties were compared to those of graphene in a zigzag nanoribbon configuration, zigzag graphene vs zigzag phagraphene nanoribbon (zzGNR and zzPGNR). The molecular geometry and the electronic properties were calculated by density functional theory (DFT) without spin, and the electronic transport and TVS were obtained by means of DFT combined with non-equilibrium Green´s function when we couple the optimized geometry of zzGNR and zzPGNR to the leads (left and right), forming the molecular junction that will be subjected to the action of an external bias voltage (Ve) to generate the molecular device. The results exhibit (i) a metal-insulator transition when Ve is increased until Ve = 1.4 V which corresponds to the nonlinear region (resonance), showing the field effect transistor behaviour for zzGNR junctions; and (ii) two nonlinear regions (two negative differential resistances), showing a resonant tunnel diode behaviour with two operation windows (Ve = 0.5 V and Ve = 1.7 V) for the zzPGNR junction. In addition, the zzPGNR junction exhibits topological insulator characteristics upon introducing topological defects such as pentagons and heptagons in the hexagonal lattice of graphene, and when Ve = 1.7 V, there occurs a topological insulator-metal transition that can be seen in the behaviour of the density of states, transmittance, and frontier molecular orbitals with Ve.},
doi = {10.1063/1.5029845},
journal = {Journal of Applied Physics},
number = 8,
volume = 124,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 28, 2019
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Two-dimensional atomic crystals
journal, July 2005

  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109

Two-dimensional gas of massless Dirac fermions in graphene
journal, November 2005

  • Novoselov, K. S.; Geim, A. K.; Morozov, S. V.
  • Nature, Vol. 438, Issue 7065, p. 197-200
  • DOI: 10.1038/nature04233

Experimental observation of the quantum Hall effect and Berry's phase in graphene
journal, November 2005

  • Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L.
  • Nature, Vol. 438, Issue 7065, p. 201-204
  • DOI: 10.1038/nature04235

Ultrathin Epitaxial Graphite:  2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics
journal, December 2004

  • Berger, Claire; Song, Zhimin; Li, Tianbo
  • The Journal of Physical Chemistry B, Vol. 108, Issue 52, p. 19912-19916
  • DOI: 10.1021/jp040650f

Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965