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Title: Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)

Abstract

High quality, epitaxial thin-films are key components of almost all modern electronic devices. During deposition, lattice mismatch between the substrate and the film generates elastic strain. The strain energy grows with film thickness until a defect is generated that relieves the strain. The strain relaxation mechanism is critical in epitaxial electrodeposition. Here, we study how a metal (bismuth) film growing via electrodeposition on a semiconductor substrate [GaAs(110)] relaxes the lattice mismatch-induced strain. Using in situ synchrotron-based X-ray techniques, we monitor the crystallographic orientation and grain size of the growing film during electrochemical deposition. We (1) confirm that a single crystallographic orientation of the film, with ($$01\bar{1}8$$) as the oriented plane, can be selected by controlling the overpotential, η, and (2) find that, after a threshold thickness is reached, the tilt angle varies monotonically with film thickness. Our data are consistent with the film relaxing the strain by forming low-energy, asymmetric tilt boundaries.

Authors:
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [1]
  1. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics; Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
  2. Univ. Autónoma de Madrid, Madrid (Spain). Dept. de Física de la Materia Condensada
  3. Cornell Univ., Ithaca, NY (United States). Cornell High Energy Synchrotron Source (CHESS)
  4. Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Energy Materials Center at Cornell (EMC2); Cornell Univ., Ithaca, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Science Foundation (NSF)
OSTI Identifier:
1540195
Alternate Identifier(s):
OSTI ID: 1460499
Grant/Contract Number:  
SC0001086; ECCS-1542081
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States: N. p., 2018. Web. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., & Brock, Joel D. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D. Mon . "Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)". United States. doi:10.1063/1.5026630. https://www.osti.gov/servlets/purl/1540195.
@article{osti_1540195,
title = {Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)},
author = {Huang, Xin and Plaza, Manuel and Ko, J. Y. Peter and Abruña, Héctor D. and Brock, Joel D.},
abstractNote = {High quality, epitaxial thin-films are key components of almost all modern electronic devices. During deposition, lattice mismatch between the substrate and the film generates elastic strain. The strain energy grows with film thickness until a defect is generated that relieves the strain. The strain relaxation mechanism is critical in epitaxial electrodeposition. Here, we study how a metal (bismuth) film growing via electrodeposition on a semiconductor substrate [GaAs(110)] relaxes the lattice mismatch-induced strain. Using in situ synchrotron-based X-ray techniques, we monitor the crystallographic orientation and grain size of the growing film during electrochemical deposition. We (1) confirm that a single crystallographic orientation of the film, with ($01\bar{1}8$) as the oriented plane, can be selected by controlling the overpotential, η, and (2) find that, after a threshold thickness is reached, the tilt angle varies monotonically with film thickness. Our data are consistent with the film relaxing the strain by forming low-energy, asymmetric tilt boundaries.},
doi = {10.1063/1.5026630},
journal = {Journal of Applied Physics},
number = 3,
volume = 124,
place = {United States},
year = {2018},
month = {7}
}

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