skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Controlling the surface photovoltage on WSe 2 by surface chemical modification

Abstract

The surface photovoltage (SPV) effect is key to the development of opto-electronic devices such as solar-cells and photo-detectors. For the prototypical transition metal dichalcogenide WSe2, core level and valence band photoemission measurements show that the surface band bending of pristine cleaved surfaces can be readily modified by adsorption with K (an electron donor) or C60 (an electron acceptor). Time-resolved pump-probe photoemission measurements reveal that the SPV for pristine cleaved surfaces is enhanced by K adsorption, but suppressed by C60 adsorption, and yet the SPV relaxation time is substantially shortened in both cases. Evidently, adsorbate-induced electronic states act as electron-hole recombination centers that shorten the carrier lifetime.

Authors:
 [1]; ORCiD logo [2];  [3];  [3];  [4];  [5];  [6];  [6];  [5];  [3];  [7]; ORCiD logo [5]
  1. Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan; Institute of Physics, Academia Sinica, Taipei 11529, Taiwan; Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA
  2. Department of Chemistry, Tokyo Institute of Technology, Tokyo 152-8551, Japan
  3. Department of Advanced Physics, Hirosaki University, Aomori 036-8561, Japan
  4. Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
  5. Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan
  6. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
  7. Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1540188
Alternate Identifier(s):
OSTI ID: 1438965
Grant/Contract Number:  
FG02-07ER46383
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, and Matsuda, Iwao. Controlling the surface photovoltage on WSe 2 by surface chemical modification. United States: N. p., 2018. Web. doi:10.1063/1.5026351.
Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, & Matsuda, Iwao. Controlling the surface photovoltage on WSe 2 by surface chemical modification. United States. doi:10.1063/1.5026351.
Liu, Ro-Ya, Ozawa, Kenichi, Terashima, Naoya, Natsui, Yuto, Feng, Baojie, Ito, Suguru, Chen, Wei-Chuan, Cheng, Cheng-Maw, Yamamoto, Susumu, Kato, Hiroo, Chiang, Tai-Chang, and Matsuda, Iwao. Mon . "Controlling the surface photovoltage on WSe 2 by surface chemical modification". United States. doi:10.1063/1.5026351. https://www.osti.gov/servlets/purl/1540188.
@article{osti_1540188,
title = {Controlling the surface photovoltage on WSe 2 by surface chemical modification},
author = {Liu, Ro-Ya and Ozawa, Kenichi and Terashima, Naoya and Natsui, Yuto and Feng, Baojie and Ito, Suguru and Chen, Wei-Chuan and Cheng, Cheng-Maw and Yamamoto, Susumu and Kato, Hiroo and Chiang, Tai-Chang and Matsuda, Iwao},
abstractNote = {The surface photovoltage (SPV) effect is key to the development of opto-electronic devices such as solar-cells and photo-detectors. For the prototypical transition metal dichalcogenide WSe2, core level and valence band photoemission measurements show that the surface band bending of pristine cleaved surfaces can be readily modified by adsorption with K (an electron donor) or C60 (an electron acceptor). Time-resolved pump-probe photoemission measurements reveal that the SPV for pristine cleaved surfaces is enhanced by K adsorption, but suppressed by C60 adsorption, and yet the SPV relaxation time is substantially shortened in both cases. Evidently, adsorbate-induced electronic states act as electron-hole recombination centers that shorten the carrier lifetime.},
doi = {10.1063/1.5026351},
journal = {Applied Physics Letters},
number = 21,
volume = 112,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385