Thin-film topological insulators for continuously tunable terahertz absorption
Abstract
One of the defining characteristics of a three-dimensional topological insulator (TI) is the appearance of a Dirac cone on its surface when it creates an interface with vacuum. For thin film TIs, however, the Dirac cones on opposite surfaces interact forming a small gap. For the case of three quintuple layers of Bi2Se3, we show that this gap can be continuously tuned between 128 meV and 0 meV with the application of modest perpendicular electric fields of less than 30 meV Å-1. With both the Hamiltonian model and first-principles density functional theory calculations, we show that the inherent nonlinearity in realistic Dirac cone interaction leads to a gap which can be continuously tuned through the application of an external electric field. This tunability, coupled with the high optical absorption of thin film TIs, make this a very promising platform for terahertz and infrared detection.
- Authors:
-
- Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
- Publication Date:
- Research Org.:
- Rensselaer Polytechnic Inst., Troy, NY (United States); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1540154
- Alternate Identifier(s):
- OSTI ID: 1422862
- Grant/Contract Number:
- SC0002623; AC02-05CH11231; DESC0002623
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 9; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Physics
Citation Formats
West, D., and Zhang, S. B. Thin-film topological insulators for continuously tunable terahertz absorption. United States: N. p., 2018.
Web. doi:10.1063/1.5016803.
West, D., & Zhang, S. B. Thin-film topological insulators for continuously tunable terahertz absorption. United States. https://doi.org/10.1063/1.5016803
West, D., and Zhang, S. B. Tue .
"Thin-film topological insulators for continuously tunable terahertz absorption". United States. https://doi.org/10.1063/1.5016803. https://www.osti.gov/servlets/purl/1540154.
@article{osti_1540154,
title = {Thin-film topological insulators for continuously tunable terahertz absorption},
author = {West, D. and Zhang, S. B.},
abstractNote = {One of the defining characteristics of a three-dimensional topological insulator (TI) is the appearance of a Dirac cone on its surface when it creates an interface with vacuum. For thin film TIs, however, the Dirac cones on opposite surfaces interact forming a small gap. For the case of three quintuple layers of Bi2Se3, we show that this gap can be continuously tuned between 128 meV and 0 meV with the application of modest perpendicular electric fields of less than 30 meV Å-1. With both the Hamiltonian model and first-principles density functional theory calculations, we show that the inherent nonlinearity in realistic Dirac cone interaction leads to a gap which can be continuously tuned through the application of an external electric field. This tunability, coupled with the high optical absorption of thin film TIs, make this a very promising platform for terahertz and infrared detection.},
doi = {10.1063/1.5016803},
journal = {Applied Physics Letters},
number = 9,
volume = 112,
place = {United States},
year = {Tue Feb 27 00:00:00 EST 2018},
month = {Tue Feb 27 00:00:00 EST 2018}
}
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Works referencing / citing this record:
Generation of terahertz radiation from the island films of topological insulator Bi 2-x Sb x Te 3-y Se y
journal, January 2019
- Kuznetsov, K. A.; Kitaeva, G. Kh.; Kuznetsov, P. I.
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Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe 1.6
journal, September 2019
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- Applied Physics Letters, Vol. 115, Issue 13