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Title: A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions

Abstract

A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1-xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1-xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1-xN are described and are capable of growing InxGa1-xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1-xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. The initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2]
  1. Georgia Institute of Technology, Atlanta, GA (United States)
  2. Arizona State University, Tempe, AZ (United States)
Publication Date:
Research Org.:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); National Science Foundation (NSF)
OSTI Identifier:
1538853
Alternate Identifier(s):
OSTI ID: 1550203
Grant/Contract Number:  
AR0000470; CA EEC-1041895
Resource Type:
Accepted Manuscript
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 136; Journal Issue: C; Journal ID: ISSN 0038-1101
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, and Ponce, Fernando A. A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions. United States: N. p., 2017. Web. doi:10.1016/j.sse.2017.06.020.
Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, & Ponce, Fernando A. A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions. United States. https://doi.org/10.1016/j.sse.2017.06.020
Clinton, Evan A., Vadiee, Ehsan, Fabien, Chloe A.M., Moseley, Michael W., Gunning, Brendan P., Doolittle, W. Alan, Fischer, Alec M., Wei, Yong O., Xie, Hongen, and Ponce, Fernando A. Sat . "A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions". United States. https://doi.org/10.1016/j.sse.2017.06.020. https://www.osti.gov/servlets/purl/1538853.
@article{osti_1538853,
title = {A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions},
author = {Clinton, Evan A. and Vadiee, Ehsan and Fabien, Chloe A.M. and Moseley, Michael W. and Gunning, Brendan P. and Doolittle, W. Alan and Fischer, Alec M. and Wei, Yong O. and Xie, Hongen and Ponce, Fernando A.},
abstractNote = {A review of metal rich and nitrogen rich (N-rich), low-temperature grown InxGa1-xN is provided, focusing on two low-temperature approaches that have resulted in non-phase separated InxGa1-xN. The metal modulated epitaxy (MME) and N-rich, low temperature approaches to the reduction of defects in InxGa1-xN are described and are capable of growing InxGa1-xN throughout the miscibility gap. MME films remain smooth at all thicknesses but show device quality material primarily for x < 0.2 and x > 0.6. Low temperature, N-rich grown films show a critical thickness extend well beyond the theoretical values and results in slower relaxation through the 0.2 < x < 0.6 range most interesting for light emitters and solar cells. This reduced defect density results in improved optical emission, but due to increased roughening with increased thickness, low temperature, N-rich films are limited to thin layers. Future thick InxGa1-xN substrates are necessary to increase design freedom, as well as improve optoelectronic device performance. The initial results with films up to 800 nm are shown to display evidence of defect annihilation which could be promising for future thick optoelectronic templates and thick devices.},
doi = {10.1016/j.sse.2017.06.020},
journal = {Solid-State Electronics},
number = C,
volume = 136,
place = {United States},
year = {2017},
month = {6}
}

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Cited by: 19 works
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Works referenced in this record:

Observation and control of the surface kinetics of InGaN for the elimination of phase separation
journal, July 2012

  • Moseley, Michael; Gunning, Brendan; Greenlee, Jordan
  • Journal of Applied Physics, Vol. 112, Issue 1
  • DOI: 10.1063/1.4733347

Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy
journal, July 2008

  • Burnham, Shawn D.; Namkoong, Gon; Look, David C.
  • Journal of Applied Physics, Vol. 104, Issue 2
  • DOI: 10.1063/1.2953089

Mg Doped GaN Using a Valved, Thermally Energetic Source: Enhanced Incorporation, Control and Quantitative Optimization
journal, January 2003


Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
journal, August 1970

  • Matthews, J. W.; Mader, S.; Light, T. B.
  • Journal of Applied Physics, Vol. 41, Issue 9
  • DOI: 10.1063/1.1659510

Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells
journal, November 2014


RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
journal, May 2003

  • Nanishi, Yasushi; Saito, Yoshiki; Yamaguchi, Tomohiro
  • Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 5A
  • DOI: 10.1143/JJAP.42.2549

InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
journal, January 2008


Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy
journal, May 2013

  • Moseley, Michael; Gunning, Brendan; Lowder, Jonathan
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 3
  • DOI: 10.1116/1.4790865

Effects of polarization charge on the photovoltaic properties of InGaN solar cells
journal, December 2010

  • Li, Z. Q.; Lestradet, M.; Xiao, Y. G.
  • physica status solidi (a), Vol. 208, Issue 4
  • DOI: 10.1002/pssa.201026489

Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates >9  μ m/h by plasma-assisted molecular beam epitaxy
journal, October 2015

  • Gunning, Brendan P.; Clinton, Evan A.; Merola, Joseph J.
  • Journal of Applied Physics, Vol. 118, Issue 15
  • DOI: 10.1063/1.4933278

Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
journal, October 2015


Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells
journal, March 2014


Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
journal, November 2003

  • Wu, J.; Walukiewicz, W.; Yu, K. M.
  • Journal of Applied Physics, Vol. 94, Issue 10
  • DOI: 10.1063/1.1618353

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
journal, September 2013

  • Fischer, A. M.; Wei, Y. O.; Ponce, F. A.
  • Applied Physics Letters, Vol. 103, Issue 13
  • DOI: 10.1063/1.4822122

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
journal, October 2008

  • Neufeld, Carl J.; Toledo, Nikholas G.; Cruz, Samantha C.
  • Applied Physics Letters, Vol. 93, Issue 14
  • DOI: 10.1063/1.2988894

When group-III nitrides go infrared: New properties and perspectives
journal, July 2009


Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
journal, August 2012

  • Gunning, Brendan; Lowder, Jonathan; Moseley, Michael
  • Applied Physics Letters, Vol. 101, Issue 8
  • DOI: 10.1063/1.4747466

Microstructures produced during the epitaxial growth of InGaN alloys
journal, March 2010


Theory of doping and defects in III–V nitrides
journal, June 1998


Fabrication and characterization of InGaN p-i-n homojunction solar cell
journal, October 2009

  • Cai, Xiao-mei; Zeng, Sheng-wei; Zhang, Bao-ping
  • Applied Physics Letters, Vol. 95, Issue 17
  • DOI: 10.1063/1.3254215

Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN
journal, April 2003


Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
journal, January 2015

  • Gunning, Brendan P.; Fabien, Chloe A. M.; Merola, Joseph J.
  • Journal of Applied Physics, Vol. 117, Issue 4
  • DOI: 10.1063/1.4906464

Characteristics of InGaN designed for photovoltaic applications
journal, May 2008


Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
journal, October 2008

  • Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun
  • Applied Physics Letters, Vol. 93, Issue 17
  • DOI: 10.1063/1.3005640

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
journal, October 2011

  • Sang, Liwen; Liao, Meiyong; Ikeda, Naoki
  • Applied Physics Letters, Vol. 99, Issue 16
  • DOI: 10.1063/1.3654155

High internal and external quantum efficiency InGaN/GaN solar cells
journal, January 2011

  • Matioli, Elison; Neufeld, Carl; Iza, Michael
  • Applied Physics Letters, Vol. 98, Issue 2
  • DOI: 10.1063/1.3540501

The role of dislocations as nonradiative recombination centers in InGaN quantum wells
journal, March 2008

  • Abell, Josh; Moustakas, T. D.
  • Applied Physics Letters, Vol. 92, Issue 9
  • DOI: 10.1063/1.2889444

Calculation of critical layer thickness versus lattice mismatch for Ge x Si 1− x /Si strained‐layer heterostructures
journal, August 1985

  • People, R.; Bean, J. C.
  • Applied Physics Letters, Vol. 47, Issue 3
  • DOI: 10.1063/1.96206

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy
journal, March 2011

  • Lang, J. R.; Neufeld, C. J.; Hurni, C. A.
  • Applied Physics Letters, Vol. 98, Issue 13
  • DOI: 10.1063/1.3575563

Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures
journal, January 1999

  • Yu, E. T.; Dang, X. Z.; Asbeck, P. M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 4
  • DOI: 10.1116/1.590818

Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
journal, November 2010

  • Moseley, Michael; Lowder, Jonathan; Billingsley, Daniel
  • Applied Physics Letters, Vol. 97, Issue 19
  • DOI: 10.1063/1.3509416

InN: A material with photovoltaic promise and challenges
journal, March 2006


III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices
journal, March 2016

  • Fabien, Chloe A. M.; Maros, Aymeric; Honsberg, Christiana B.
  • IEEE Journal of Photovoltaics, Vol. 6, Issue 2
  • DOI: 10.1109/JPHOTOV.2015.2504790

Thermal stability of thin InGaN films on GaN
journal, May 2010


Transient atomic behavior and surface kinetics of GaN
journal, July 2009

  • Moseley, Michael; Billingsley, Daniel; Henderson, Walter
  • Journal of Applied Physics, Vol. 106, Issue 1
  • DOI: 10.1063/1.3148275

Low-temperature growth of InGaN films over the entire composition range by MBE
journal, September 2015


Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers
journal, February 2002

  • Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni
  • Journal of Applied Physics, Vol. 91, Issue 4
  • DOI: 10.1063/1.1435835

Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics
journal, February 2002

  • Namkoong, Gon; Doolittle, W. Alan; Brown, April S.
  • Journal of Applied Physics, Vol. 91, Issue 4
  • DOI: 10.1063/1.1435834

Key inventions in the history of nitride-based blue LED and LD
journal, March 2007


Slip systems and misfit dislocations in InGaN epilayers
journal, December 2003

  • Srinivasan, S.; Geng, L.; Liu, R.
  • Applied Physics Letters, Vol. 83, Issue 25
  • DOI: 10.1063/1.1633029

Origin of background electron concentration in InxGa1xN alloys
journal, August 2011


GaN-Based RF Power Devices and Amplifiers
journal, February 2008


Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization
journal, January 2007

  • Burnham, Shawn D.; Namkoong, Gon; Lee, Kyoung-Keun
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 3
  • DOI: 10.1116/1.2737435

New Approach in Equilibrium Theory for Strained Layer Relaxation
journal, November 1994


Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells
journal, July 2011


In situ growth regime characterization of AlN using reflection high energy electron diffraction
journal, January 2006

  • Burnham, Shawn D.; Alan Doolittle, W.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, Issue 4
  • DOI: 10.1116/1.2219757

Gallium nitride based transistors
journal, July 2001


Works referencing / citing this record:

Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors
journal, July 2018