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Title: Controlling Molecular Doping in Organic Semiconductors

Abstract

Strong interactions between molecular dopants and organic semiconductor morphology are often responsible for charge trapping and low doping efficiency. This study reviews how solution-processing techniques can control these interactions and render them useful for engineering diffusion rates, doping gradients, and film topography. These breakthroughs suggest new roles for molecular doping in device fabrication as well as function.

Authors:
ORCiD logo [1]; ORCiD logo [2]
  1. Department of Materials Science, University of California, Davis, 1 Shields Avenue Davis CA 95616 USA
  2. Department of Chemical Engineering, University of California, Davis, 1 Shields Avenue Davis CA 95616 USA
Publication Date:
Research Org.:
Univ. of California, Davis, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1537362
Alternate Identifier(s):
OSTI ID: 1392143
Grant/Contract Number:  
SC0010419
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 42; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Jacobs, Ian E., and Moulé, Adam J. Controlling Molecular Doping in Organic Semiconductors. United States: N. p., 2017. Web. doi:10.1002/adma.201703063.
Jacobs, Ian E., & Moulé, Adam J. Controlling Molecular Doping in Organic Semiconductors. United States. doi:10.1002/adma.201703063.
Jacobs, Ian E., and Moulé, Adam J. Fri . "Controlling Molecular Doping in Organic Semiconductors". United States. doi:10.1002/adma.201703063. https://www.osti.gov/servlets/purl/1537362.
@article{osti_1537362,
title = {Controlling Molecular Doping in Organic Semiconductors},
author = {Jacobs, Ian E. and Moulé, Adam J.},
abstractNote = {Strong interactions between molecular dopants and organic semiconductor morphology are often responsible for charge trapping and low doping efficiency. This study reviews how solution-processing techniques can control these interactions and render them useful for engineering diffusion rates, doping gradients, and film topography. These breakthroughs suggest new roles for molecular doping in device fabrication as well as function.},
doi = {10.1002/adma.201703063},
journal = {Advanced Materials},
number = 42,
volume = 29,
place = {United States},
year = {2017},
month = {9}
}

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Cited by: 43 works
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