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Title: Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Abstract

We study the electronic and magnetic structures of quasi-one-dimensional interfaces along the zigzag direction in two-dimensional GaN/SiC heterostructures using first-principles calculations. Four representative heterostructures with six inequivalent interfaces are discussed in detail. Our results indicate that a bulk electric field will develop only when both interfaces feature no gap states and the total net charge at interfaces are of opposite sign. All the geometries studied exhibit an intriguing quasi-one-dimensional conductor character, of which three show finite nonzero magnetic moment. Furthermore, the magnetic moment in one of the systems can be tuned by applying an electric field along the normal direction of monolayer indicating a strong magnetoelectric coupling. Our analysis shows that the magnetization at the interfaces is closely related to the density of states at the Fermi level due to the Stoner instability, and the ribbon-width-dependent magnetization for different geometries implies the existence of an in-bulk electric field.

Authors:
 [1];  [2];  [2];  [2];  [2]
+ Show Author Affiliations
  1. Xi'an Shiyou Univ., Shaanxi (China); Univ. of Florida, Gainesville, FL (United States)
  2. Univ. of Florida, Gainesville, FL (United States)
Publication Date:
Research Org.:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1535842
Alternate Identifier(s):
OSTI ID: 1338106
Grant/Contract Number:  
FG02-02ER45995
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Materials Science; Physics; Electronic structure; Solid-solid interfaces

Citation Formats

Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., and Cheng, Hai-Ping. Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties. United States: N. p., 2017. Web. doi:10.1103/physrevb.95.045302.
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Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., & Cheng, Hai-Ping. Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties. United States. https://doi.org/10.1103/physrevb.95.045302
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Chen, Guo-Xiang, Li, Xiang-Guo, Wang, Yun-Peng, Fry, James N., and Cheng, Hai-Ping. Tue . "Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties". United States. https://doi.org/10.1103/physrevb.95.045302. https://www.osti.gov/servlets/purl/1535842.
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@article{osti_1535842,
title = {Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties},
author = {Chen, Guo-Xiang and Li, Xiang-Guo and Wang, Yun-Peng and Fry, James N. and Cheng, Hai-Ping},
abstractNote = {We study the electronic and magnetic structures of quasi-one-dimensional interfaces along the zigzag direction in two-dimensional GaN/SiC heterostructures using first-principles calculations. Four representative heterostructures with six inequivalent interfaces are discussed in detail. Our results indicate that a bulk electric field will develop only when both interfaces feature no gap states and the total net charge at interfaces are of opposite sign. All the geometries studied exhibit an intriguing quasi-one-dimensional conductor character, of which three show finite nonzero magnetic moment. Furthermore, the magnetic moment in one of the systems can be tuned by applying an electric field along the normal direction of monolayer indicating a strong magnetoelectric coupling. Our analysis shows that the magnetization at the interfaces is closely related to the density of states at the Fermi level due to the Stoner instability, and the ribbon-width-dependent magnetization for different geometries implies the existence of an in-bulk electric field.},
doi = {10.1103/physrevb.95.045302},
journal = {Physical Review B},
number = 4,
volume = 95,
place = {United States},
year = {Tue Jan 03 00:00:00 EST 2017},
month = {Tue Jan 03 00:00:00 EST 2017}
}
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https://doi.org/10.1103/physrevb.95.045302
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