On the recombination centers of iron-gallium pairs in Ga-doped silicon

doi:10.1063/1.5000358

Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

Authors:

Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Grini, Sigbjørn; Vines, Lasse; Stoddard, Nathan;

Publication Date:: 2017-08-28

Research Org.:: SolarWorld Americas, Inc., Hillsboro, OR (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1535341

Grant/Contract Number:: EE0006806

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: Physics

Citation Formats


                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States: N. p., 2017. 
        Web.  doi:10.1063/1.5000358.

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, & Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States.  doi:10.1063/1.5000358.

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. Mon .  
        "On the recombination centers of iron-gallium pairs in Ga-doped silicon".  United States.  doi:10.1063/1.5000358.  https://www.osti.gov/servlets/purl/1535341.

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@article{osti_1535341,

  title        = {On the recombination centers of iron-gallium pairs in Ga-doped silicon},

  author       = {Nærland, Tine Uberg and Bernardini, Simone and Haug, Halvard and Grini, Sigbjørn and Vines, Lasse and Stoddard, Nathan and Bertoni, Mariana},

  abstractNote = {Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.},

  doi          = {10.1063/1.5000358},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 122,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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DOI: 10.1063/1.5000358

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Works referenced in this record:

24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates
journal, November 1999

Zhao, Jianhua; Wang, Aihua; Green, Martin A.
Progress in Photovoltaics: Research and Applications, Vol. 7, Issue 6, p. 471-474
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979

Ciszek, T. F.; Schwuttke, G. H.; Yang, K. H.
Journal of Crystal Growth, Vol. 46, Issue 4, p. 527-533
DOI: 10.1016/0022-0248(79)90041-1

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Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Citation Formats

24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates journal, November 1999

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journal, November 1999

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