On the recombination centers of iron-gallium pairs in Ga-doped silicon

doi:10.1063/1.5000358

Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be E_V + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

Authors:

Nærland, Tine Uberg ^[1]; Bernardini, Simone ^[1]; Haug, Halvard ^[2]; Grini, Sigbjørn ^[3]; Vines, Lasse ^[3]; Stoddard, Nathan ^[4];

^[1]

Arizona State Univ., Tempe, AZ (United States)
Institute for Energy Technology, Kjeller (Norway)
Univ. of Oslo (Norway)
Solar World Industries America, Hillsboro, OR (United States)

Publication Date:: 2017-08-28

Research Org.:: SolarWorld Americas, Inc., Hillsboro, OR (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1535341

Grant/Contract Number:: EE0006806

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY

Citation Formats


                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States: N. p., 2017. 
        Web.  doi:10.1063/1.5000358.

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, & Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States.  doi:10.1063/1.5000358.

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. Mon .  
        "On the recombination centers of iron-gallium pairs in Ga-doped silicon".  United States.  doi:10.1063/1.5000358.  https://www.osti.gov/servlets/purl/1535341.

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@article{osti_1535341,

  title        = {On the recombination centers of iron-gallium pairs in Ga-doped silicon},

  author       = {Nærland, Tine Uberg and Bernardini, Simone and Haug, Halvard and Grini, Sigbjørn and Vines, Lasse and Stoddard, Nathan and Bertoni, Mariana},

  abstractNote = {Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.},

  doi          = {10.1063/1.5000358},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 122,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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DOI: 10.1063/1.5000358

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Cited by: 6 works

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Works referenced in this record:

>750 mV open circuit voltage measured on 50 μ m thick silicon heterojunction solar cell
journal, July 2013

Herasimenka, Stanislau Y.; Dauksher, William J.; Bowden, Stuart G.
Applied Physics Letters, Vol. 103, Issue 5
DOI: 10.1063/1.4817723

Directionally solidified solar-grade silicon using carbon crucibles
journal, April 1979

Ciszek, T. F.; Schwuttke, G. H.; Yang, K. H.
Journal of Crystal Growth, Vol. 46, Issue 4, p. 527-533
DOI: 10.1016/0022-0248(79)90041-1

Improved Parameterization of Auger Recombination in Silicon
journal, January 2012

Richter, A.; Werner, F.; Cuevas, A.
Energy Procedia, Vol. 27
DOI: 10.1016/j.egypro.2012.07.034

Light-Induced Degradation in Crystalline Silicon Solar Cells
journal, September 2003

Schmidt, Jan
Solid State Phenomena, Vol. 95-96
DOI: 10.4028/www.scientific.net/SSP.95-96.187

The Properties of Iron in Silicon
journal, January 1981

Graff, K.
Journal of The Electrochemical Society, Vol. 128, Issue 3
DOI: 10.1149/1.2127478

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
journal, August 2001

Khan, Aurangzeb; Yamaguchi, Masafumi; Ohshita, Y.
Journal of Applied Physics, Vol. 90, Issue 3
DOI: 10.1063/1.1384855

Iron–acceptor pairs in silicon: Structure and formation processes
journal, September 2001

Zhao, Song; Assali, L. V. C.; Justo, J. F.
Journal of Applied Physics, Vol. 90, Issue 6
DOI: 10.1063/1.1389763

Oxygen diffusion and precipitation in Czochralski silicon
journal, June 2000

Newman, R. C.
Journal of Physics: Condensed Matter, Vol. 12, Issue 25
DOI: 10.1088/0953-8984/12/25/201

Iron and its complexes in silicon
journal, July 1999

Istratov, A. A.; Hieslmair, H.; Weber, E. R.
Applied Physics A: Materials Science & Processing, Vol. 69, Issue 1
DOI: 10.1007/s003390050968

Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
journal, January 1986

Chantre, A.; Kimerling, Lionel C.
Materials Science Forum, Vol. 10-12
DOI: 10.4028/www.scientific.net/MSF.10-12.387

Electronic Structure of Transition Metal Ions in a Tetrahedral Lattice
journal, August 1960

Ludwig, G. W.; Woodbury, H. H.
Physical Review Letters, Vol. 5, Issue 3
DOI: 10.1103/PhysRevLett.5.98

On the potential and limits of large area seeding for photovoltaic silicon
journal, October 2016

Stoddard, Nathan; Gründig-Wendrock, Bianca; Krause, Andreas
Journal of Crystal Growth, Vol. 452
DOI: 10.1016/j.jcrysgro.2016.04.056

Electronic properties of interstitial iron and iron-boron pairs determined by means of advanced lifetime spectroscopy
journal, December 2005

Rein, S.; Glunz, S. W.
Journal of Applied Physics, Vol. 98, Issue 11
DOI: 10.1063/1.2106017

Effect of illumination conditions on Czochralski-grown silicon solar cell degradation
journal, April 2003

Hashigami, Hiroshi; Itakura, Yu; Saitoh, Tadashi
Journal of Applied Physics, Vol. 93, Issue 7
DOI: 10.1063/1.1559430

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Shockley, W.; Read, W. T.
Physical Review, Vol. 87, Issue 5
DOI: 10.1103/PhysRev.87.835

24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates
journal, November 1999

Zhao, Jianhua; Wang, Aihua; Green, Martin A.
Progress in Photovoltaics: Research and Applications, Vol. 7, Issue 6, p. 471-474
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7

Silicon nitride coating and crucible—effects of using upgraded materials in the casting of multicrystalline silicon ingots
journal, January 2008

Olsen, E.; Øvrelid, E. J.
Progress in Photovoltaics: Research and Applications, Vol. 16, Issue 2
DOI: 10.1002/pip.777

Unraveling bulk defects in high-quality c-Si material via TIDLS: Unraveling bulk defects in high-quality c-Si material
journal, December 2016

Bernardini, Simone; Naerland, Tine U.; Blum, Adrienne L.
Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 3
DOI: 10.1002/pip.2847

Intrinsic concentration, effective densities of states, and effective mass in silicon
journal, March 1990

Green, Martin A.
Journal of Applied Physics, Vol. 67, Issue 6
DOI: 10.1063/1.345414

A Comparison of Bulk Lifetime, Efficiency, and Light-Induced Degradation in Boron- and Gallium-Doped Cast mc-Si Solar Cells
journal, November 2006

Sheoran, M.; Upadhyaya, A.; Rohatgi, A.
IEEE Transactions on Electron Devices, Vol. 53, Issue 11
DOI: 10.1109/TED.2006.883675

Overlapping electron traps in n ‐type silicon studied by capacitance transient spectroscopy
journal, August 1989

Svensson, B. G.; Rydén, K. ‐H.; Lewerentz, B. M. S.
Journal of Applied Physics, Vol. 66, Issue 4
DOI: 10.1063/1.344389

Recombination activity of iron-gallium and iron-indium pairs in silicon
journal, June 2005

Schmidt, Jan; Macdonald, Daniel
Journal of Applied Physics, Vol. 97, Issue 11
DOI: 10.1063/1.1929096

Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
journal, February 2004

Macdonald, D. H.; Geerligs, L. J.; Azzizi, A.
Journal of Applied Physics, Vol. 95, Issue 3
DOI: 10.1063/1.1637136

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
journal, April 2008

Macdonald, D.; Tan, J.; Trupke, T.
Journal of Applied Physics, Vol. 103, Issue 7
DOI: 10.1063/1.2903895

Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurements in Silicon
journal, January 1996

Bullis, W. Murray
Journal of The Electrochemical Society, Vol. 143, Issue 4
DOI: 10.1149/1.1836650

Electronically controlled reactions of interstitial iron in silicon
journal, February 1983

Kimerling, L. C.; Benton, J. L.
Physica B+C, Vol. 116, Issue 1-3
DOI: 10.1016/0378-4363(83)90263-2

Dotierungseigenschaften von Eisen in Silizium
journal, March 1981

Lemke, H.
Physica Status Solidi (a), Vol. 64, Issue 1
DOI: 10.1002/pssa.2210640123

Electronic properties of the iron-boron impurity pair in silicon
journal, July 1987

Assali, L. V. C.; Leite, J. R.
Physical Review B, Vol. 36, Issue 2
DOI: 10.1103/PhysRevB.36.1296

Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon
journal, April 1990

Gehlhoff, W.; Emanuelsson, P.; Omling, P.
Physical Review B, Vol. 41, Issue 12
DOI: 10.1103/PhysRevB.41.8560

Assessing the role of iron-acceptor pairs in solar grade multicrystalline silicon wafers from the metallurgical route: Assessing the role of iron-acceptor pairs in solar grade multicrystalline silicon wafers from the metallurgical route
journal, September 2012

Hvidsten Dahl, Espen; Osinniy, Viktor; Friestad, Kenneth
physica status solidi (c), Vol. 9, Issue 10-11
DOI: 10.1002/pssc.201200258

Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors
journal, March 2003

Schmidt, Jan
Applied Physics Letters, Vol. 82, Issue 13
DOI: 10.1063/1.1563830

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon
journal, November 2012

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.
Applied Physics Letters, Vol. 101, Issue 22
DOI: 10.1063/1.4766337

Electron-Hole Recombination in Germanium
journal, July 1952

Hall, R. N.
Physical Review, Vol. 87, Issue 2
DOI: 10.1103/PhysRev.87.387

Spin Resonance of Transition Metals in Silicon
journal, January 1960

Woodbury, H. H.; Ludwig, G. W.
Physical Review, Vol. 117, Issue 1
DOI: 10.1103/PhysRev.117.102

Recombination‐enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si
journal, December 1996

Sakauchi, S.; Suezawa, M.; Sumino, K.
Journal of Applied Physics, Vol. 80, Issue 11
DOI: 10.1063/1.363695

Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
journal, May 2005

Birkholz, Jens E.; Bothe, Karsten; Macdonald, Daniel
Journal of Applied Physics, Vol. 97, Issue 10
DOI: 10.1063/1.1897489

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
journal, February 2002

Rein, S.; Rehrl, T.; Warta, W.
Journal of Applied Physics, Vol. 91, Issue 4
DOI: 10.1063/1.1428095

100 cm2 solar cells on Czochralski silicon with an efficiency of 20�2%
journal, March 2000

Glunz, S. W.; K�ster, B.; Leimenstoll, T.
Progress in Photovoltaics: Research and Applications, Vol. 8, Issue 2
DOI: 10.1002/(SICI)1099-159X(200003/04)8:2<237::AID-PIP309>3.0.CO;2-C

Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
journal, November 1997

Takahashi, Hideki; Suezawa, Masashi; Sumino, Koji
Japanese Journal of Applied Physics, Vol. 36, Issue Part 1, No. 11
DOI: 10.1143/JJAP.36.6807

Interstitial iron and iron-acceptor pairs in silicon
journal, April 1982

W�nstel, K.; Wagner, P.
Applied Physics A Solids and Surfaces, Vol. 27, Issue 4
DOI: 10.1007/BF00619081

Iron-Boron Pair in Silicon: Old Problem Anew
journal, October 1996

Dobaczewski, L.; Surma, M.
Acta Physica Polonica A, Vol. 90, Issue 4
DOI: 10.12693/APhysPolA.90.613

Works referencing / citing this record:

NeoGrowth silicon: A new high purity, low-oxygen crystal growth technique for photovoltaic substrates
journal, January 2018

Stoddard, Nathan; Russell, Joshua; Hixson, Earl C.
Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 5
DOI: 10.1002/pip.2984

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Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Citation Formats

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Directionally solidified solar-grade silicon using carbon crucibles journal, April 1979

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Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping journal, February 2004

Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence journal, April 2008

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Dotierungseigenschaften von Eisen in Silizium journal, March 1981

Electronic properties of the iron-boron impurity pair in silicon journal, July 1987

Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon journal, April 1990

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Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon journal, November 2012

Electron-Hole Recombination in Germanium journal, July 1952

Spin Resonance of Transition Metals in Silicon journal, January 1960

Recombination‐enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si journal, December 1996

Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements journal, May 2005

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions journal, February 2002

100 cm2 solar cells on Czochralski silicon with an efficiency of 20�2% journal, March 2000

Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon journal, November 1997

Interstitial iron and iron-acceptor pairs in silicon journal, April 1982

Iron-Boron Pair in Silicon: Old Problem Anew journal, October 1996

NeoGrowth silicon: A new high purity, low-oxygen crystal growth technique for photovoltaic substrates journal, January 2018

>750 mV open circuit voltage measured on 50 μ m thick silicon heterojunction solar cell
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Directionally solidified solar-grade silicon using carbon crucibles
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Improved Parameterization of Auger Recombination in Silicon
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The Properties of Iron in Silicon
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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
journal, August 2001

Iron–acceptor pairs in silicon: Structure and formation processes
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Oxygen diffusion and precipitation in Czochralski silicon
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On the potential and limits of large area seeding for photovoltaic silicon
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Recombination activity of iron-gallium and iron-indium pairs in silicon
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Electronically controlled reactions of interstitial iron in silicon
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Electronic properties of the iron-boron impurity pair in silicon
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Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon
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Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors
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Electron-Hole Recombination in Germanium
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Recombination‐enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si
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Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
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