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Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

Authors:
 [1];  [1];  [2];  [3];  [3];  [4]; ORCiD logo [1]
  1. Arizona State Univ., Tempe, AZ (United States)
  2. Institute for Energy Technology, Kjeller (Norway)
  3. Univ. of Oslo (Norway)
  4. Solar World Industries America, Hillsboro, OR (United States)
Publication Date:
Research Org.:
SolarWorld Americas, Inc., Hillsboro, OR (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1535341
Grant/Contract Number:  
EE0006806
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY

Citation Formats

Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon. United States: N. p., 2017. Web. doi:10.1063/1.5000358.
Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, & Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon. United States. doi:10.1063/1.5000358.
Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. Mon . "On the recombination centers of iron-gallium pairs in Ga-doped silicon". United States. doi:10.1063/1.5000358. https://www.osti.gov/servlets/purl/1535341.
@article{osti_1535341,
title = {On the recombination centers of iron-gallium pairs in Ga-doped silicon},
author = {Nærland, Tine Uberg and Bernardini, Simone and Haug, Halvard and Grini, Sigbjørn and Vines, Lasse and Stoddard, Nathan and Bertoni, Mariana},
abstractNote = {Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.},
doi = {10.1063/1.5000358},
journal = {Journal of Applied Physics},
number = 8,
volume = 122,
place = {United States},
year = {2017},
month = {8}
}

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    Works referencing / citing this record:

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