On the recombination centers of iron-gallium pairs in Ga-doped silicon

Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Grini, Sigbjørn; Vines, Lasse; Stoddard, Nathan; Bertoni, Mariana

doi:10.1063/1.5000358

Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be E_V + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

Authors:

Nærland, Tine Uberg ^[1]; Bernardini, Simone ^[1]; Haug, Halvard ^[2]; Grini, Sigbjørn ^[3]; Vines, Lasse ^[3]; Stoddard, Nathan ^[4];

^[1]

Arizona State Univ., Tempe, AZ (United States)
Institute for Energy Technology, Kjeller (Norway)
Univ. of Oslo (Norway)
Solar World Industries America, Hillsboro, OR (United States)

Publication Date:: 2017-08-28

Research Org.:: SolarWorld Americas, Inc., Hillsboro, OR (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1535341

Grant/Contract Number:: EE0006806

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 122; Journal Issue: 8; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 14 SOLAR ENERGY

Citation Formats


                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States: N. p., 2017. 
Web.  doi:10.1063/1.5000358.

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, & Bertoni, Mariana. On the recombination centers of iron-gallium pairs in Ga-doped silicon.  United States.  https://doi.org/10.1063/1.5000358

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                    Nærland, Tine Uberg, Bernardini, Simone, Haug, Halvard, Grini, Sigbjørn, Vines, Lasse, Stoddard, Nathan, and Bertoni, Mariana. Mon .  
"On the recombination centers of iron-gallium pairs in Ga-doped silicon".  United States.  https://doi.org/10.1063/1.5000358.  https://www.osti.gov/servlets/purl/1535341.

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@article{osti_1535341,

  title        = {On the recombination centers of iron-gallium pairs in Ga-doped silicon},

  author       = {Nærland, Tine Uberg and Bernardini, Simone and Haug, Halvard and Grini, Sigbjørn and Vines, Lasse and Stoddard, Nathan and Bertoni, Mariana},

  abstractNote = {Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.},

  doi          = {10.1063/1.5000358},

  journal      = {Journal of Applied Physics},

  number       = 8,

  volume       = 122,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

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Works referencing / citing this record:

NeoGrowth silicon: A new high purity, low-oxygen crystal growth technique for photovoltaic substrates
journal, January 2018

Stoddard, Nathan; Russell, Joshua; Hixson, Earl C.
Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 5
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Title: On the recombination centers of iron-gallium pairs in Ga-doped silicon

Abstract

Citation Formats

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Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping journal, February 2004

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Dotierungseigenschaften von Eisen in Silizium journal, March 1981

Electronic properties of the iron-boron impurity pair in silicon journal, July 1987

Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon journal, April 1990

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Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon journal, November 2012

Electron-Hole Recombination in Germanium journal, July 1952

Spin Resonance of Transition Metals in Silicon journal, January 1960

Recombination‐enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si journal, December 1996

Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements journal, May 2005

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions journal, February 2002

100 cm2 solar cells on Czochralski silicon with an efficiency of 20�2% journal, March 2000

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Interstitial iron and iron-acceptor pairs in silicon journal, April 1982

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>750 mV open circuit voltage measured on 50 μ m thick silicon heterojunction solar cell
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Improved Parameterization of Auger Recombination in Silicon
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The Properties of Iron in Silicon
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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
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Iron–acceptor pairs in silicon: Structure and formation processes
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Oxygen diffusion and precipitation in Czochralski silicon
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On the potential and limits of large area seeding for photovoltaic silicon
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Electronically controlled reactions of interstitial iron in silicon
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Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon
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Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements
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