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Title: Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

Abstract

The temperature dependence of the energy bandgap of hexagonal boron nitride (h-BN) has been probed via photoluminescence emission characteristics of a donor-to-acceptor pair transition in a 20-layer h-BN epilayer. The results indicate that the universal behavior of bandgap decreasing with temperature is absent in multi-layer h-BN. Below 100 K, the bandgap energy variation with temperature, Eg vs. T, is dominated by the electron-phonon coupling and conforms to the common behavior of redshift with an increase in temperature. At T > 100 K, the bandgap shows an unusual blueshift with temperature, which can be attributed to the unique behavior of the in-plane thermal expansion coefficient of h-BN that becomes negative above around 60 K. Although both graphite and h-BN have negative thermal expansion coefficients in a broad temperature range, graphite has a zero energy bandgap, which makes h-BN a unique semiconductor to exhibit this unusual temperature dependence of the energy bandgap.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Texas Tech Univ., Lubbock, TX (United States)
Publication Date:
Research Org.:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1535328
Alternate Identifier(s):
OSTI ID: 1395378
Grant/Contract Number:  
NA0002927
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Physics

Citation Formats

Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride. United States: N. p., 2017. Web. doi:10.1063/1.4994070.
Du, X. Z., Li, J., Lin, J. Y., & Jiang, H. X. Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride. United States. doi:10.1063/1.4994070.
Du, X. Z., Li, J., Lin, J. Y., and Jiang, H. X. Thu . "Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride". United States. doi:10.1063/1.4994070. https://www.osti.gov/servlets/purl/1535328.
@article{osti_1535328,
title = {Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride},
author = {Du, X. Z. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {The temperature dependence of the energy bandgap of hexagonal boron nitride (h-BN) has been probed via photoluminescence emission characteristics of a donor-to-acceptor pair transition in a 20-layer h-BN epilayer. The results indicate that the universal behavior of bandgap decreasing with temperature is absent in multi-layer h-BN. Below 100 K, the bandgap energy variation with temperature, Eg vs. T, is dominated by the electron-phonon coupling and conforms to the common behavior of redshift with an increase in temperature. At T > 100 K, the bandgap shows an unusual blueshift with temperature, which can be attributed to the unique behavior of the in-plane thermal expansion coefficient of h-BN that becomes negative above around 60 K. Although both graphite and h-BN have negative thermal expansion coefficients in a broad temperature range, graphite has a zero energy bandgap, which makes h-BN a unique semiconductor to exhibit this unusual temperature dependence of the energy bandgap.},
doi = {10.1063/1.4994070},
journal = {Applied Physics Letters},
number = 13,
volume = 111,
place = {United States},
year = {2017},
month = {9}
}

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    Works referencing / citing this record:

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