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Title: Graphene grown out of diamond

Abstract

Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. This paper reports the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [2];  [4]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Collaborative Innovation Center of Quantum Matter, Beijing, China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China
  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  3. Department of Physics, Renmin University of China, Beijing 100872, China
  4. Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535282
Grant/Contract Number:  
SC0002623
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
Physics

Citation Formats

Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Graphene grown out of diamond. United States: N. p., 2016. Web. doi:10.1063/1.4964710.
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, & Zhang, Shengbai. Graphene grown out of diamond. United States. doi:10.1063/1.4964710.
Gu, Changzhi, Li, Wuxia, Xu, Jing, Xu, Shicong, Lu, Chao, Xu, Lifang, Li, Junjie, and Zhang, Shengbai. Mon . "Graphene grown out of diamond". United States. doi:10.1063/1.4964710. https://www.osti.gov/servlets/purl/1535282.
@article{osti_1535282,
title = {Graphene grown out of diamond},
author = {Gu, Changzhi and Li, Wuxia and Xu, Jing and Xu, Shicong and Lu, Chao and Xu, Lifang and Li, Junjie and Zhang, Shengbai},
abstractNote = {Most applications of graphene need a suitable support substrate to present its excellent properties. But transferring graphene onto insulators or growing graphene on foreign substrates could cause properties diminishing. This paper reports the graphene growth directly out of diamond (111) by B doping, guided by first-principles calculations. The spontaneous graphene formation occurred due to the reconstruction of the diamond surface when the B doping density and profile are adequate. The resulting materials are defect free with high phase purity/carrier mobility, controllable layer number, and good uniformity, which can be potentially used directly for device fabrication, e.g., high-performance devices requiring good thermal conductivity.},
doi = {10.1063/1.4964710},
journal = {Applied Physics Letters},
number = 16,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}

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