Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness
Abstract
We report a systematic investigation of interfacial thermal conductance (Gk) between few to tens -layered mechanical exfoliated molybdenum disulfide (MoS2) and crystalline silicon (c-Si). Based on Raman spectroscopy, we find Gk at room temperature increases with increased layer numbers of MoS2 from 0.974 MW m-2 K-1 to 68.6 MW m-2 K-1. The higher Gk of thicker samples reveals their better interface contact with the substrate, leading to accordingly improved interfacial energy coupling. Molecular dynamics (MD) simulations are conducted to interpret and compare with the experimental observations. MD simulations predict a thermal conductance in the range of 53–77 MW m-2 K-1, which agrees well with the upper bound Gk measured in our work. The thickness dependence of measured Gk reflects the improved interface spacing for thicker MoS2 samples. This phenomenon is further confirmed by the Raman intensity enhancement study by the interface spacing and local optical interference calculations.
- Authors:
-
- Iowa State Univ., Ames, IA (United States). Dept. of Mechanical Engineering
- Iowa State Univ., Ames, IA (United States). Dept. of Mechanical Engineering; Qingdao Technological Univ. (China). School of Environmental and Municipal Engineering
- Publication Date:
- Research Org.:
- Iowa State Univ., Ames, IA (United States)
- Sponsoring Org.:
- USDOE Office of Nuclear Energy (NE)
- OSTI Identifier:
- 1533452
- Alternate Identifier(s):
- OSTI ID: 1398621
- Grant/Contract Number:
- NE0000671; CBET1235852; CMMI1264399; DENE0000671; OG-15-011
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Acta Materialia
- Additional Journal Information:
- Journal Volume: 122; Journal ID: ISSN 1359-6454
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; molybdenum disulfide; Raman spectroscopy; interface energy; MD simulations
Citation Formats
Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, and Wang, Xinwei. Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness. United States: N. p., 2016.
Web. doi:10.1016/j.actamat.2016.09.045.
Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, & Wang, Xinwei. Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness. United States. https://doi.org/10.1016/j.actamat.2016.09.045
Yuan, Pengyu, Li, Chong, Xu, Shen, Liu, Jing, and Wang, Xinwei. Mon .
"Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness". United States. https://doi.org/10.1016/j.actamat.2016.09.045. https://www.osti.gov/servlets/purl/1533452.
@article{osti_1533452,
title = {Interfacial thermal conductance between few to tens of layered-MoS2 and c-Si: Effect of MoS2 thickness},
author = {Yuan, Pengyu and Li, Chong and Xu, Shen and Liu, Jing and Wang, Xinwei},
abstractNote = {We report a systematic investigation of interfacial thermal conductance (Gk) between few to tens -layered mechanical exfoliated molybdenum disulfide (MoS2) and crystalline silicon (c-Si). Based on Raman spectroscopy, we find Gk at room temperature increases with increased layer numbers of MoS2 from 0.974 MW m-2 K-1 to 68.6 MW m-2 K-1. The higher Gk of thicker samples reveals their better interface contact with the substrate, leading to accordingly improved interfacial energy coupling. Molecular dynamics (MD) simulations are conducted to interpret and compare with the experimental observations. MD simulations predict a thermal conductance in the range of 53–77 MW m-2 K-1, which agrees well with the upper bound Gk measured in our work. The thickness dependence of measured Gk reflects the improved interface spacing for thicker MoS2 samples. This phenomenon is further confirmed by the Raman intensity enhancement study by the interface spacing and local optical interference calculations.},
doi = {10.1016/j.actamat.2016.09.045},
journal = {Acta Materialia},
number = ,
volume = 122,
place = {United States},
year = {Mon Oct 03 00:00:00 EDT 2016},
month = {Mon Oct 03 00:00:00 EDT 2016}
}
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