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Title: Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure

Authors:
 [1];  [2]; ORCiD logo [3];  [4];  [5];  [6];  [7]
  1. National Synchrotron Radiation LaboratoryUniversity of Science and Technology of China Hefei Anhui 230026 China, Materials Science DivisionArgonne National Laboratory Argonne IL 60439 USA
  2. Advanced Photon SourceArgonne National Laboratory Argonne IL 60439 USA, Department of Materials Science and EngineeringChina University of Petroleum Beijing 102202 China
  3. National Synchrotron Radiation LaboratoryUniversity of Science and Technology of China Hefei Anhui 230026 China
  4. Advanced Photon SourceArgonne National Laboratory Argonne IL 60439 USA
  5. Materials Science DivisionArgonne National Laboratory Argonne IL 60439 USA
  6. High Magnetic Field LaboratoryChinese Academy of Sciences (CAS) Hefei 230026 China, Hefei National Laboratory for Physical Sciences at MicroscaleUniversity of Science and Technology of China Hefei 230026 China
  7. National Synchrotron Radiation LaboratoryUniversity of Science and Technology of China Hefei Anhui 230026 China, Beijing Advanced Sciences and Innovation CenterChinese Academy of Sciences Beijing 101407 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1532581
Grant/Contract Number:  
DE‐AC02‐ 06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure. Germany: N. p., 2019. Web. doi:10.1002/admi.201900644.
Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, & Gao, Chen. Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure. Germany. doi:10.1002/admi.201900644.
Dong, Yongqi, Ma, Zhiyuan, Luo, Zhenlin, Zhou, Hua, Fong, Dillon D., Wu, Wenbin, and Gao, Chen. Tue . "Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure". Germany. doi:10.1002/admi.201900644.
@article{osti_1532581,
title = {Interfacial Octahedral Manipulation Imparts Hysteresis‐Free Metal to Insulator Transition in Ultrathin Nickelate Heterostructure},
author = {Dong, Yongqi and Ma, Zhiyuan and Luo, Zhenlin and Zhou, Hua and Fong, Dillon D. and Wu, Wenbin and Gao, Chen},
abstractNote = {},
doi = {10.1002/admi.201900644},
journal = {Advanced Materials Interfaces},
number = ,
volume = ,
place = {Germany},
year = {2019},
month = {7}
}

Journal Article:
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This content will become publicly available on July 8, 2020
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Works referenced in this record:

Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039