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Title: Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells

Abstract

Thermal gradients have been predicted to play a large role in compositional segregation leading to failure in phase change memories. We have developed a methodology for isolating thermal-gradient driven segregation effects without interference from the electric field. In Ge2Sb2Te5 functional layers, Sb and Te move along the temperature gradient, while Ge segregates in the opposite direction. The direction of segregation is consistent for devices that were repeatedly melted, as well as for devices that were never melted and remained in the polycrystalline state. Here, the results have implications for the reliability of phase change memories.

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]; ORCiD logo [1]
  1. Carnegie Mellon Univ., Pittsburgh, PA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1531245
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Yeoh, Phoebe, Ma, Yuanzhi, Cullen, David A., Bain, James A., and Skowronski, Marek. Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells. United States: N. p., 2019. Web. doi:10.1063/1.5095470.
Yeoh, Phoebe, Ma, Yuanzhi, Cullen, David A., Bain, James A., & Skowronski, Marek. Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells. United States. doi:10.1063/1.5095470.
Yeoh, Phoebe, Ma, Yuanzhi, Cullen, David A., Bain, James A., and Skowronski, Marek. Fri . "Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells". United States. doi:10.1063/1.5095470. https://www.osti.gov/servlets/purl/1531245.
@article{osti_1531245,
title = {Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells},
author = {Yeoh, Phoebe and Ma, Yuanzhi and Cullen, David A. and Bain, James A. and Skowronski, Marek},
abstractNote = {Thermal gradients have been predicted to play a large role in compositional segregation leading to failure in phase change memories. We have developed a methodology for isolating thermal-gradient driven segregation effects without interference from the electric field. In Ge2Sb2Te5 functional layers, Sb and Te move along the temperature gradient, while Ge segregates in the opposite direction. The direction of segregation is consistent for devices that were repeatedly melted, as well as for devices that were never melted and remained in the polycrystalline state. Here, the results have implications for the reliability of phase change memories.},
doi = {10.1063/1.5095470},
journal = {Applied Physics Letters},
number = 16,
volume = 114,
place = {United States},
year = {2019},
month = {4}
}

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